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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP35N10

Name: SPP35N10
Brand: Infineon Technologies
SKU: SPP35N10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP35N10

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP35N10.pdf

Description:: MOSFET N-CH 100V 35A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPP35N10 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET rated for 100 V drain-source voltage, 35 A continuous drain current at T_C = 25 °C, and 44 mΩ maximum R_DS(on) at V_GS = 10 V and I_D = 26.4 A. It operates up to 175 °C junction temperature, features avalanche energy rating (E_AS = 245 mJ), and is housed in PG-TO220-3-1 package - widely used in industrial DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPP35N10 datasheet, SPP35N10 pinout, SPP35N10 application, or SPP35N10 equivalent, key selection criteria include its 6 kV/µs dv/dt rating, 12–23 S transconductance, 1180–1570 pF input capacitance, reverse diode forward voltage (0.95–1.25 V), and thermal resistance (R_thJC = 1 K/W) for heatsink-limited high-current switching.

Technical Context

This MOSFET employs a planar SIPMOS™ process optimized for ruggedness and fast switching in hard-switched topologies. Its gate threshold voltage (2.1–4 V) ensures reliable turn-on with standard 10 V gate drivers, while the 6.1 V gate plateau voltage reflects stable Miller region behavior during switching transitions.

The device integrates an intrinsic body diode with 80–100 ns reverse recovery time and 230–290 nC Q_rr, enabling moderate-frequency synchronous rectification and freewheeling in buck and half-bridge configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V and 72 V bus systems with 2× safety margin against transient overvoltage
R_DS(on) max	44 mΩ at V_GS = 10 V, I_D = 26.4 A - enables ≤1.2 W conduction loss at 25 A DC load
I_D cont	35 A at T_C = 25 °C - requires active heatsinking above ~15 A in enclosed industrial enclosures
E_AS	245 mJ single-pulse - withstands inductive turn-off surges in relay/motor control without snubber
dv/dt rating	6 kV/µs - resists false triggering in noisy EMI environments (e.g., factory automation drives)
Q_g total	49–65 nC - determines gate driver peak current requirement (~2 A for 30 ns rise time)
V_GS(th)	2.1–4 V - compatible with 3.3 V and 5 V logic-level controllers when using gate boosters

Pinout & Package

PG-TO220-3-1 package: through-hole, isolated tab (drain-connected), vertical mounting, 1 K/W junction-to-case thermal resistance. Tab is electrically connected to Drain (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node in half-bridge
Pin 2 (Drain)	Drain terminal / Heatsink tab	Main high-current path; electrically tied to metal tab for thermal conduction and electrical connection
Pin 3 (Gate)	Control input	High-impedance MOS gate requiring <100 nA bias; sensitive to ESD and ringing without proper RC damping

Key Features

Feature	Design Value
Avalanche-rated operation	Guaranteed single-pulse E_AS = 245 mJ enables robustness in inductive load switching without external clamping
175 °C maximum junction temperature	Supports sealed enclosure designs with limited airflow and high ambient temperatures (e.g., outdoor power supplies)
dv/dt immunity	6 kV/µs rating prevents spurious turn-on during fast voltage transients in motor phase-legs
Low Q_gd/Q_g ratio	27–41 nC / 49–65 nC ≈ 0.4–0.6 - improves switching efficiency by reducing Miller-induced delay in hard-switched SMPS
Integrated body diode	1.25 V V_SD max at 35 A enables cost-effective freewheeling in non-synchronous buck converters

Applications

Industrial Motor Drive Half-Bridge

48 V DC-DC Buck Converter

Use Scenario: High-side and low-side switching in 3-phase inverter stages driving 1–3 kW BLDC motors.

IC Role / Device Role / Timing Role: Power switch in hard-switched half-bridge; handles 35 A peak phase current with 100 V bus headroom.

Use Value: Avalanche rating absorbs back-EMF spikes during commutation; 1 K/W R_thJC allows direct bolt-down heatsinking for compact thermal design.

Use Scenario: Primary-side switch in isolated 48 V input → 12 V output telecom DC-DC modules.

IC Role / Device Role / Timing Role: Main power FET operating at 100–300 kHz with 50% duty cycle; manages 20 A average output current.

Use Value: Low R_DS(on) minimizes conduction loss; 6 kV/µs dv/dt rating suppresses false triggering from transformer leakage spikes.

Uninterruptible Power Supply (UPS) Inverter

Automated Gate Driver Reference Design

Use Scenario: Output stage of line-interactive UPS delivering 1 kVA sinusoidal AC via H-bridge topology.

IC Role / Device Role / Timing Role: Bidirectional switching element handling 35 A RMS output current; conducts body diode during dead-time.

Use Value: 80–100 ns t_rr and 230–290 nC Q_rr limit diode switching loss and cross-conduction risk during zero-voltage transitions.

Use Scenario: Validation FET on Infineon's EVAL-M5-1ED020I12AH evaluation board for 1ED020I12AH gate driver IC.

IC Role / Device Role / Timing Role: Load switch demonstrating gate drive timing, Miller plateau behavior, and SOA compliance under pulsed stress.

Use Value: Standardized PG-TO220-3-1 footprint and known Q_g/R_DS(on) enable repeatable gate driver characterization across labs and production test benches.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPbF	R_DS(on) = 44 mΩ (same), but V_DS = 100 V, T_jmax = 175 °C - identical voltage/current rating; lower g_fs (12 S typ vs. 23 S typ)	Lacks specified E_AS and dv/dt rating; not qualified for repetitive avalanche stress	Prefer SPP35N10 where inductive surge immunity or high-temperature reliability is required.
STP36NF10	R_DS(on) = 36 mΩ (lower), V_DS = 100 V, I_D = 36 A - slightly better conduction, but no published dv/dt spec and E_AS = 190 mJ (lower)	Higher gate charge (Q_g = 72 nC) increases driver loss; less suitable for high-frequency PWM	Choose STP36NF10 only if conduction loss dominates and switching frequency is <100 kHz.

Compared with IRF540NPbF and STP36NF10, the SPP35N10 uniquely combines certified avalanche ruggedness, 6 kV/µs dv/dt immunity, and superior transconductance - making it optimal for industrial motor drives and UPS inverters where reliability under electrical stress is non-negotiable.

Availability

SPP35N10 is available at Aetrix Electronics and suitable for industrial motor drives, 48 V DC-DC converters, uninterruptible power supplies, and automated gate driver reference designs requiring stable component supply and long-term lifecycle support.

Supply support for SPP35N10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The SIPMOS™ product line delivers high-reliability, high-voltage power MOSFETs engineered for rugged industrial switching applications - particularly where avalanche capability, thermal stability, and EMI resilience are critical.

FAQ

Is SPP35N10 pin-compatible with SPI35N10?

Yes - both share identical PG-TO220-3-1 mechanical footprint and pinout (Drain-tab, Source-Pin1, Gate-Pin3). The SPI35N10 uses PG-TO262-3-1 (surface-mount variant), so physical interchangeability applies only to through-hole PCB layouts designed for SPP35N10.

What is the maximum recommended gate resistor for 100 kHz switching?

A 10 Ω gate resistor is recommended for 100 kHz operation with standard 1 A peak gate drivers. This balances switching speed (td(on)/td(off) ~12–59 ns) and gate ringing suppression, given the device's 49–65 nC total gate charge and 137–206 pF Crss.

Does SPP35N10 require a negative gate voltage for safe turn-off?

No - the device has no requirement for negative V_GS. Its V_GS(th) (2.1–4 V) and ±20 V absolute maximum rating allow safe turn-off with 0 V gate drive. However, a small negative offset (−2 V) may improve noise immunity in high-dv/dt environments.

Can SPP35N10 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (see Fig. 9) enables current sharing across paralleled units. Use matched gate resistors (<±5% tolerance) and symmetrical layout to minimize dynamic imbalance; derate total current by 15% for thermal margin in shared heatsink setups.

SPP35N10 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 44mOhm @ 26.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP35N10 FAQ

1.How can I place an order for SPP35N10 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP35N10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP35N10 reliable?

The price and inventory of SPP35N10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP35N10 is usually 5 days.

3.What payment methods are accepted for SPP35N10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP35N10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP35N10?

SPP35N10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP35N10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP35N10?

For technical support, including SPP35N10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP35N10 requirements.

6.How does Aetrix verify that SPP35N10 is sourced from the original manufacturer or authorized distributors?

All SPP35N10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP35N10 meets industry standards.

7.What is the process for return or replacement of SPP35N10?

All SPP35N10 units undergo pre-shipment inspection (PSI). If there is an issue with SPP35N10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP35N10 part is unused and in its original packaging.

Return procedure for SPP35N10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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