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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP42N03S2L-13

Name: SPP42N03S2L-13
Brand: Infineon Technologies
SKU: SPP42N03S2L-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP42N03S2L-13

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP42N03S2L-13.pdf

Description:: MOSFET N-CH 30V 42A TO220-3

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Product details

Overview

SPP42N03S2L-13 from Infineon Technologies is an N-channel logic-level enhancement-mode power MOSFET in TO-220 package, rated for 30 V V_DS, 42 A continuous drain current at T_C = 25 °C, and 12.9 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating, 175 °C maximum junction temperature, and optimized gate charge × R_DS(on) figure of merit for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPP42N03S2L-13 datasheet, SPP42N03S2L-13 pinout, SPP42N03S2L-13 application, or SPP42N03S2L-13 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, low thermal resistance (R_thJC = 1.2–1.8 K/W), dv/dt ruggedness (6 kV/µs), and integrated body diode with 24 ns reverse recovery time.

Technical Context

This MOSFET employs a trench-based OptiMOS® process to achieve low R_DS(on) and high transconductance (g_fs = 21–42 S) while maintaining robust switching behavior. Its gate threshold voltage (1.2–2.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers.

The device is characterized for operation up to 175 °C junction temperature and supports repetitive avalanche energy (E_AR = 8 mJ), enabling use in inductive load switching without external snubbers. Dynamic parameters-including Q_g = 22.9–30.5 nC and C_iss = 850–1130 pF-are specified under standardized test conditions (V_DD = 15 V, R_G = 7.8 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V nominal bus systems with margin.
R_DS(on) max	12.9 mΩ at V_GS = 10 V - Enables ≤0.55 W conduction loss at 42 A, critical for thermal management in compact power stages.
I_D continuous	42 A at T_C = 25 °C - Supported by bondwire-limited current handling and low R_thJC.
Q_g total	22.9–30.5 nC - Determines gate driver power requirement and switching speed trade-off in PWM applications.
E_AS	110 mJ single-pulse - Allows safe clamping of inductive kickback in relay/motor control without external protection.
T_j max	175 °C - Supports operation in sealed enclosures or high-ambient industrial environments.
dv/dt rating	6 kV/µs - Ensures immunity to false turn-on during fast voltage transients in half-bridge configurations.

Pinout & Package

Package: P-TO220-3-1 - Through-hole, isolated tab, standard TO-220 outline with drain-connected metal tab for heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path in buck/half-bridge topologies.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <20 V absolute max; driven via series resistor to control dV/dt and ringing.
Pin 3 (Drain)	Power output	Internally connected to metal tab; electrically tied to heatsink-requires isolation if heatsink is grounded.

Key Features

Feature	Design Value
Logic-level gate drive	Turns on fully at V_GS ≥ 4.5 V-compatible with microcontroller GPIO and low-voltage gate drivers without level-shifting.
Avalanche-rated	110 mJ single-pulse E_AS enables robust operation in inductive switching without snubber circuits.
Low R_thJC	1.2–1.8 K/W thermal resistance allows >60 W dissipation with modest heatsinking at T_C = 25 °C.
Optimized FOM	Q_g × R_DS(on) minimized for high-frequency switching efficiency in 100–500 kHz SMPS designs.

Applications

Motor Control

DC-DC Converters

Use Scenario: Brushed DC motor H-bridge half-bridge leg in automotive seat adjusters or industrial actuators.

IC Role / Device Role / Timing Role: Low-side switch controlling motor current direction and braking via PWM duty cycle.

Use Value: 42 A peak current capability and 175 °C rating support intermittent high-torque loads without derating.

Use Scenario: Synchronous rectifier in 12 V → 3.3 V/5 V buck converter for embedded control modules.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 300 kHz with minimal conduction and switching losses.

Use Value: 12.9 mΩ R_DS(on) and 24 ns t_rr reduce both I²R loss and body diode conduction loss during dead-time.

Power Supplies

Load Switching

Use Scenario: Primary-side switch in 24 V input offline AC-DC adapter with active clamp flyback topology.

IC Role / Device Role / Timing Role: Main power switch subjected to high dv/dt and repetitive avalanche stress during clamp cycle.

Use Value: 6 kV/µs dv/dt rating and 8 mJ E_AR ensure reliable long-term operation without gate oscillation or failure.

Use Scenario: Hot-swap and inrush current limiting in 24 V industrial PLC backplane power distribution.

IC Role / Device Role / Timing Role: High-current load switch controlled by microcontroller with soft-start via gate ramping.

Use Value: Logic-level gate enables direct MCU drive; 42 A rating supports ≥100 W distributed loads per rail.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(on) = 12 mΩ @ 10 V, but higher Q_g (42 nC) and no avalanche rating.	Lacks E_AS specification; unsuitable for inductive switching without external protection.	Prefer only in low-dv/dt, resistive-load applications where gate drive strength is prioritized over ruggedness.
STP40NF3L	R_DS(on) = 14 mΩ @ 10 V, lower I_D (40 A), and 150 °C T_j max.	Reduced thermal margin limits sustained 42 A operation in enclosed environments.	Select when cost sensitivity outweighs need for 175 °C rating and 110 mJ avalanche energy.

Compared with IRL3803PBF and STP40NF3L, SPP42N03S2L-13 delivers superior ruggedness (110 mJ E_AS, 6 kV/µs dv/dt), extended temperature capability (175 °C), and lower Q_g × R_DS(on)-making it optimal for high-reliability motor drives and industrial SMPS where fault tolerance and thermal headroom are critical.

Availability

SPP42N03S2L-13 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and industrial power supply applications requiring stable component supply, long lifecycle support, and traceable sourcing.

Supply support for SPP42N03S2L-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS® 30 V logic-level power MOSFET product line, engineered for high-efficiency, high-ruggedness switching in space-constrained industrial and automotive power stages.

FAQ

Is SPP42N03S2L-13 suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.2–2.0 V and guaranteed turn-on at V_GS = 4.5 V, this MOSFET fully enhances using standard 3.3 V logic outputs when paired with a low-impedance gate driver or buffer stage. Its R_DS(on) remains below 19.9 mΩ even at 4.5 V, ensuring efficient operation without level-shifting circuitry.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 42 A at both T_C = 25 °C and T_C = 100 °C. This reflects bondwire-limited current handling rather than thermal limitation; actual usable current at elevated case temperatures depends on heatsink design and ambient conditions, but the device maintains rated conduction performance up to 100 °C case.

Does SPP42N03S2L-13 have a qualified avalanche rating for repetitive operation?

No. While it is rated for 110 mJ single-pulse avalanche energy (E_AS), repetitive avalanche energy (E_AR) is limited by T_jmax and specified as 8 mJ. Repetitive inductive switching must be designed to stay within this limit or use external clamping to avoid cumulative junction heating and degradation.

Can the TO-220 tab be directly mounted to a grounded heatsink?

No. The drain is internally connected to the metal tab in the P-TO220-3-1 package. Mounting to a grounded heatsink creates a short between drain and system ground unless electrically isolated using a thermally conductive but electrically insulating pad or washer. Isolation is mandatory in half-bridge or high-side configurations.

SPP42N03S2L-13 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12.9mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2V @ 37µA

Gate Charge (Qg) (Max) @ Vgs:: 30.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1130 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP42N03S2L-13 FAQ

1.How can I place an order for SPP42N03S2L-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP42N03S2L-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP42N03S2L-13 reliable?

The price and inventory of SPP42N03S2L-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP42N03S2L-13 is usually 5 days.

3.What payment methods are accepted for SPP42N03S2L-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP42N03S2L-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP42N03S2L-13?

SPP42N03S2L-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP42N03S2L-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP42N03S2L-13?

For technical support, including SPP42N03S2L-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP42N03S2L-13 requirements.

6.How does Aetrix verify that SPP42N03S2L-13 is sourced from the original manufacturer or authorized distributors?

All SPP42N03S2L-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP42N03S2L-13 meets industry standards.

7.What is the process for return or replacement of SPP42N03S2L-13?

All SPP42N03S2L-13 units undergo pre-shipment inspection (PSI). If there is an issue with SPP42N03S2L-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP42N03S2L-13 part is unused and in its original packaging.

Return procedure for SPP42N03S2L-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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