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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP47N10

Name: SPP47N10
Brand: Infineon Technologies
SKU: SPP47N10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP47N10

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP47N10.pdf

Description:: MOSFET N-CH 100V 47A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPP47N10 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET rated for 100 V drain-source voltage, 47 A continuous drain current at T_C = 25 °C, and 33 mΩ maximum R_DS(on) at V_GS = 10 V and I_D = 33 A. It features avalanche rating, 6 kV/µs dv/dt capability, and operates up to 175 °C junction temperature-commonly used in DC-DC converters, motor control inverters, and industrial power supplies.

For engineers reviewing the SPP47N10 datasheet, SPP47N10 pinout, SPP47N10 application, or SPP47N10 equivalent, key selection criteria include its P-TO220-3-1 package thermal resistance (R_thJC = 0.85 K/W), gate charge profile (Q_g = 70–105 nC), and robust unclamped inductive switching (E_AS = 400 mJ), critical for hard-switching and high-reliability power stages.

Technical Context

This MOSFET employs a planar SIPMOS™ process optimized for low conduction loss and high ruggedness. Its threshold voltage (V_GS(th) = 2.1–4.0 V) ensures reliable turn-on with standard 10 V gate drivers, while its transconductance (g_fs = 13–26 S) supports stable current regulation under dynamic load conditions.

The device integrates a fast, low-Q_rr body diode (Q_rr = 400–600 nC, t_rr = 100–150 ns) and exhibits strong dv/dt immunity (6 kV/µs), enabling operation in noisy, high-speed switching environments without spurious turn-on-essential for bridge-leg configurations and synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before avalanche onset; defines usable bus voltage range in 48 V and 96 V systems.
R_DS(on) max	33 mΩ at V_GS = 10 V, I_D = 33 A - Directly determines conduction loss (P_cond ≈ I² × R) in high-current paths.
I_D cont	47 A at T_C = 25 °C - Specifies heatsink-cooled current handling; derates to 33 A at T_C = 100 °C.
E_AS	400 mJ (single-pulse, I_D = 47 A, V_DD = 25 V) - Quantifies energy-handling capability during inductive turn-off stress.
Q_g	70–105 nC - Governs gate drive power and switching speed; impacts driver sizing and EMI behavior.
t_r/t_f	23–36 ns / 15–22.5 ns - Fast edge rates enable high-frequency operation (>100 kHz) with minimized switching loss.
V_SD	1.1–1.5 V at I_F = 94 A - Forward voltage of integrated body diode; affects reverse recovery losses in half-bridge freewheeling.

Pinout & Package

Packaged in P-TO220-3-1 (standard through-hole power package), the SPP47N10 uses a 3-pin layout with Drain connected to the metal tab for direct heatsinking, Source as common return, and Gate isolated for drive signal routing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive voltage (±20 V max); requires low-inductance path to minimize ringing and overshoot.
Pin 2 (Drain)	High-side power node	Internally bonded to metal tab; electrically and thermally coupled to heatsink-must be insulated if heatsink is grounded.
Pin 3 (Source)	Reference node	Common return for gate drive and load current; establishes local ground reference for driver IC placement.

Key Features

Feature	Design Value
Avalanche-rated	Rated for repetitive unclamped inductive switching (E_AS = 400 mJ), eliminating need for external snubbers in many flyback and motor drive topologies.
High dv/dt immunity	6 kV/µs - Prevents false turn-on during high-slew-rate commutation, improving reliability in half-bridge and LLC resonant circuits.
175 °C max T_j	Enables operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial drives) without derating penalties.
Low Q_gd/Q_g ratio	Q_gd = 29–43.5 nC of total Q_g - Reduces Miller-induced switching delay and improves controllability during hard switching.

Applications

Motor Drive Inverter

DC-DC Boost Converter

Use Scenario: Three-phase BLDC inverter stage in HVAC compressors, delivering 1–3 kW output.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-pack configuration; handles 47 A peak phase current at 20–50 kHz PWM.

Use Value: Low R_DS(on) minimizes conduction loss across wide load range; avalanche rating absorbs regenerative energy during rapid deceleration.

Use Scenario: 48 V input to 380 V boost stage in telecom rectifiers and solar string optimizers.

IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) boost topology operating at 100 kHz.

Use Value: Fast t_r/t_f and low C_oss reduce switching loss; high V_DS rating accommodates 380 V bus with margin.

Industrial UPS Inverter

AC-DC PFC Front-End

Use Scenario: Output H-bridge in online double-conversion UPS supplying critical IT loads.

IC Role / Device Role / Timing Role: Full-bridge switching device handling 47 A RMS output current with 10 ms overload capability.

Use Value: Robust E_AS withstands short-circuit events; 175 °C T_j supports fanless thermal design in compact chassis.

Use Scenario: Active PFC switch in 3 kW server PSU front-end, operating in transition mode (TM).

IC Role / Device Role / Timing Role: High-efficiency switching element controlling inductor current zero-crossing at variable frequency.

Use Value: Low Q_rr and soft-recovery body diode reduce diode reverse recovery loss and EMI generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP48NF10	R_DS(on) = 22 mΩ (typ), higher gate charge (Q_g = 110 nC), same V_DS and I_D.	Better conduction efficiency but slower switching; suited for lower-frequency (<50 kHz), high-current linear-regulated designs.	Select when minimizing conduction loss dominates over switching loss and gate drive capability is sufficient.
IRF540N	R_DS(on) = 44 mΩ (max), lower avalanche rating (E_AS = 120 mJ), no specified dv/dt rating.	Limited to non-rugged, low-stress applications like basic lighting or low-power SMPS where cost is primary.	Use only in cost-sensitive, low-reliability applications where avalanche and dv/dt immunity are not required.

Compared with STP48NF10 and IRF540N, the SPP47N10 offers balanced trade-offs: superior ruggedness and dv/dt immunity versus STP48NF10's lower R_DS(on), and significantly higher reliability than IRF540N in hard-switched industrial power stages.

Availability

SPP47N10 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term manufacturability.

Supply support for SPP47N10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The SIPMOS™ power transistor product line targets high-efficiency, high-reliability power conversion-designed specifically for demanding applications including motor control, renewable energy inverters, and industrial SMPS where ruggedness and thermal stability are critical.

FAQ

What is the maximum allowable gate-source voltage for SPP47N10?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with 0 V or –5 V applied during off-state to ensure robust noise immunity and prevent unintended turn-on in high-dv/dt environments.

Can SPP47N10 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) enables current sharing across paralleled devices. Thermal coupling via shared heatsink and matched gate drive impedance (≤ 1 Ω per gate) are essential. Derate total current by 15% to account for mismatch and thermal gradients.

Is the body diode suitable for synchronous rectification?

No-the integrated body diode has relatively high V_SD (1.1–1.5 V) and moderate Q_rr (400–600 nC), making it unsuitable for high-efficiency synchronous rectification. External Schottky or MOSFET-based synchronous rectifiers are recommended for such applications.

What is the thermal resistance from junction to case (R_thJC)?

R_thJC is 0.85 K/W maximum, measured under standard mounting conditions (greased interface, 2.5 N·m torque on TO220 screw). This value enables accurate junction temperature estimation: T_j = T_C + (P_diss × 0.85), critical for lifetime and SOA validation.

SPP47N10 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 33mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 4V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 175W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP47N10 FAQ

1.How can I place an order for SPP47N10 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP47N10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP47N10 reliable?

The price and inventory of SPP47N10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP47N10 is usually 5 days.

3.What payment methods are accepted for SPP47N10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP47N10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP47N10?

SPP47N10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP47N10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP47N10?

For technical support, including SPP47N10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP47N10 requirements.

6.How does Aetrix verify that SPP47N10 is sourced from the original manufacturer or authorized distributors?

All SPP47N10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP47N10 meets industry standards.

7.What is the process for return or replacement of SPP47N10?

All SPP47N10 units undergo pre-shipment inspection (PSI). If there is an issue with SPP47N10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP47N10 part is unused and in its original packaging.

Return procedure for SPP47N10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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