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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP47N10L

Name: SPP47N10L
Brand: Infineon Technologies
SKU: SPP47N10L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP47N10L

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP47N10L.pdf

Description:: MOSFET N-CH 100V 47A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:2,052

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Product details

Overview

SPP47N10L from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS™ power MOSFET rated for 100 V drain-source voltage, 47 A continuous drain current at T_C = 25 °C, and 26 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and operates up to 175 °C junction temperature-designed for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPP47N10L datasheet, SPP47N10L pinout, SPP47N10L application, or SPP47N10L equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), low R_DS(on) at 4.5 V, robust unclamped inductive switching performance (E_AS = 400 mJ), and TO-220-3 package thermal resistance (R_thJC = 0.85 K/W).

Technical Context

This device uses trench-gate SIPMOS technology optimized for low gate charge (Q_g = 90–135 nC) and fast switching (t_r = 100–150 ns, t_f = 70–105 ns), enabling high-efficiency operation in hard-switched topologies. Its 175 °C maximum junction temperature and 1.1–1.5 V body diode forward voltage support thermally constrained industrial motor control designs.

The MOSFET exhibits stable threshold voltage over temperature (V_GS(th) drift < ±0.2 V from −60 °C to 175 °C) and minimal R_DS(on) increase at elevated T_j, ensuring predictable conduction loss in sustained load conditions. Its 2000–2500 pF input capacitance and 210–265 pF reverse transfer capacitance support reliable gate driver sizing for 50–100 kHz PWM applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V and 72 V bus systems with 2× safety margin against transients
R_DS(on) @ V_GS = 10 V	18–26 mΩ - enables ≤1.2 W conduction loss at 47 A, reducing heatsink requirements
I_D (continuous)	47 A @ T_C = 25 °C - suitable for high-current output stages without forced air cooling
E_AS	400 mJ - withstands single-pulse inductive energy in motor phase-leg commutation
dv/dt rating	6 kV/µs - prevents spurious turn-on during fast voltage transients in bridge configurations
Q_g	90–135 nC - determines gate driver peak current requirement (~2–3 A for 50 ns rise time)
T_j max	175 °C - allows operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

Package: P-TO220-3-1 (standard through-hole TO-220AB, isolated tab, 3-pin straight lead).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to metal tab; requires insulated mounting hardware when referenced to non-ground potentials
Source	Reference node for gate drive and current sensing	Low-inductance connection critical for stable switching and accurate shunt-based current measurement
Gate	Control terminal for channel modulation	High-impedance input requiring low-ESR gate resistor (typically 5–22 Ω) to damp ringing and limit peak current

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables direct interface with 3.3 V/5 V microcontrollers without level-shifting
Avalanche-rated	Single-pulse E_AS = 400 mJ ensures ruggedness in inductive load switching without external snubbers
High dv/dt immunity	6 kV/µs rating suppresses false triggering in high-speed half-bridge and LLC resonant converter nodes
Thermal robustness	R_thJC = 0.85 K/W and T_j max = 175 °C allow sustained operation under 100% load in ambient up to 85 °C
Low Q_gd/Q_g ratio	Q_gd = 16–24 nC / Q_g = 90–135 nC improves Miller immunity and reduces switching loss sensitivity to layout parasitics

Applications

Brushless DC Motor Drive

Industrial DC-DC Converter

Use Scenario: Three-phase inverter stage driving 500 W–2 kW BLDC motors in HVAC blowers and conveyor systems.

IC Role / Device Role / Timing Role: High-side and low-side switch in 6-step commutation; handles 47 A peak phase current with 100 V bus.

Use Value: Logic-level gate drive simplifies gate driver IC selection; 400 mJ E_AS eliminates need for external clamping diodes during regenerative braking.

Use Scenario: Primary-side synchronous rectifier or secondary-side switch in 48 V–12 V isolated buck-derived converters for PLC I/O modules.

IC Role / Device Role / Timing Role: Main power switch operating at 100 kHz with 50% duty cycle; dissipates ≤2.5 W at full load.

Use Value: 26 mΩ R_DS(on) at 4.5 V reduces conduction loss by 35% vs. standard 10 V gate MOSFETs, improving efficiency above 92%.

UPS Inverter Stage

Power Tool Battery Management

Use Scenario: Half-bridge output stage in 1 kVA line-interactive UPS converting 48 V battery to 230 V AC via SPWM.

IC Role / Device Role / Timing Role: Fast-switching power switch handling 47 A pulsed current; subjected to repetitive 6 kV/µs dv/dt stress during dead-time transitions.

Use Value: 6 kV/µs dv/dt rating prevents false turn-on; 175 °C T_j max supports compact heatsinking in space-constrained rack-mount enclosures.

Use Scenario: High-current discharge FET in 18 V–60 V cordless power tool battery packs with active protection circuitry.

IC Role / Device Role / Timing Role: Main load disconnect switch rated for 188 A pulsed current during stall events; controlled by embedded protection ASIC.

Use Value: Avalanche energy rating (400 mJ) absorbs inductive kickback from motor windings during emergency cutoff, enhancing system reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP48N10F7	R_DS(on) = 16 mΩ @ 10 V, Q_g = 72 nC, but V_GS(th) = 2.5–4.5 V - not logic-level compatible	Requires 10 V gate drive; unsuitable for 3.3 V MCU direct drive	Select only if higher gate voltage rail is available and lower R_DS(on) justifies redesign of gate driver stage
IRF540N	R_DS(on) = 44 mΩ @ 10 V, V_GS(th) = 2–4 V, no avalanche rating, T_j max = 175 °C	Lacks E_AS specification and dv/dt rating - vulnerable to inductive switching failure	Acceptable only in low-energy, low-dv/dt linear or quasi-resonant applications where ruggedness is not required

Compared with STP48N10F7 and IRF540N, SPP47N10L uniquely combines logic-level drive, certified avalanche capability, and 6 kV/µs dv/dt immunity-making it the only option among the three qualified for high-reliability motor drive and UPS inverter use without gate voltage boosting or external protection.

Availability

SPP47N10L is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and high-current DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for SPP47N10L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

SPP47N10L belongs to the SIPMOS™ logic-level power MOSFET product line, engineered for high-efficiency, high-ruggedness switching in motor control, UPS, and industrial power conversion where gate drive simplicity and thermal resilience are critical.

FAQ

Is SPP47N10L pin-compatible with other TO-220 N-channel MOSFETs?

Yes-SPP47N10L uses the standard P-TO220-3-1 footprint with Drain (tab), Source (pin 1), and Gate (pin 2) pinout. Mechanical dimensions and mounting hole spacing match JEDEC TO-220AB specifications, enabling drop-in replacement in existing PCB layouts designed for 3-pin TO-220 packages.

What is the maximum recommended gate resistor value for SPP47N10L in 100 kHz switching?

For 100 kHz operation with 47 A load, a 10 Ω gate resistor is recommended to balance switching speed (t_r/t_f ~125 ns) and gate driver stress. Lower values (<5 Ω) increase peak gate current beyond 2.5 A, risking driver IC thermal overload; higher values (>22 Ω) extend switching times and raise total switching loss above 1.8 W per transition.

Does SPP47N10L require a gate pull-down resistor in static applications?

Yes-a 10 kΩ gate-to-source pull-down resistor is mandatory to prevent floating gate voltage during power-up, MCU reset, or open-drain control signal loss. Without it, the MOSFET may partially turn on due to noise coupling or leakage, causing unintended conduction and potential thermal runaway at high currents.

Can SPP47N10L be used in parallel configurations for higher current handling?

Yes-its positive R_DS(on) temperature coefficient (R_DS(on) increases with T_j) enables inherent current sharing. For reliable paralleling, match devices from same wafer lot, use identical gate trace lengths and resistors, and ensure symmetrical thermal mounting to minimize imbalance; derate total current by 15% versus sum of individual ratings.

SPP47N10L Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 135 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 175W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP47N10L FAQ

1.How can I place an order for SPP47N10L through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP47N10L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP47N10L reliable?

The price and inventory of SPP47N10L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP47N10L is usually 5 days.

3.What payment methods are accepted for SPP47N10L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP47N10L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP47N10L?

SPP47N10L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP47N10L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP47N10L?

For technical support, including SPP47N10L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP47N10L requirements.

6.How does Aetrix verify that SPP47N10L is sourced from the original manufacturer or authorized distributors?

All SPP47N10L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP47N10L meets industry standards.

7.What is the process for return or replacement of SPP47N10L?

All SPP47N10L units undergo pre-shipment inspection (PSI). If there is an issue with SPP47N10L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP47N10L part is unused and in its original packaging.

Return procedure for SPP47N10L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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