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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP73N03S2L08XK

Name: SPP73N03S2L08XK
Brand: Infineon Technologies
SKU: SPP73N03S2L08XK
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP73N03S2L08XK

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP73N03S2L08XK.pdf

Description:: MOSFET N-CH 30V 73A TO220-3

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Product details

Overview

SPP73N03S2L08XK from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO-220-3 package, rated for 30 V V_DS, 73 A continuous drain current at T_C = 25 °C, and 8.4 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating, 175 °C maximum junction temperature, and optimized gate charge × R_DS(on) figure-of-merit for high-efficiency DC-DC and motor drive switching.

For engineers reviewing the SPP73N03S2L08XK datasheet, SPP73N03S2L08XK pinout, SPP73N03S2L08XK application, or SPP73N03S2L08XK equivalent, key selection criteria include its 8.4 mΩ on-resistance at 10 V gate drive, 34.7 nC total gate charge, 107 W power dissipation at T_C = 25 °C, and robust 170 mJ single-pulse avalanche energy - critical for automotive body control modules and industrial power supplies.

Technical Context

This MOSFET employs Infineon's OptiMOS™ process for low conduction and switching losses. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from microcontrollers and PWM controllers without level-shifting. The device supports high dv/dt immunity (6 kV/µs) and operates up to 175 °C, making it suitable for thermally constrained environments.

Thermal resistance R_thJC is specified at 0.9–1.4 K/W, enabling reliable 73 A conduction with appropriate heatsinking. The integrated body diode exhibits 0.96–1.28 V forward voltage at 73 A and 27–40 ns reverse recovery time, supporting synchronous rectification and freewheeling in buck converters and H-bridge motor drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage before avalanche onset; defines use in ≤24 V nominal systems with transient margin.
R_DS(on) @ V_GS = 10 V	8.4 mΩ max - Enables <1.5 W conduction loss at 40 A, critical for high-current 12 V/24 V power stages.
I_D continuous @ T_C = 25 °C	73 A - Sustained current capability with adequate case cooling; derates to ~62 A at T_C = 100 °C.
Q_g total	34.7–46.2 nC - Determines gate driver strength requirement; ~35 nC enables efficient 100–500 kHz switching with low driver loss.
E_AS single pulse	170 mJ - Withstands inductive energy spikes in motor drives and relay snubbing without failure.
T_j max	175 °C - Supports operation in under-hood automotive and sealed industrial enclosures without thermal shutdown.
V_GS(th)	1.2–2.0 V - Ensures turn-on with standard 3.3 V or 5 V logic outputs; avoids need for gate boosters.

Pinout & Package

Package: TO-220-3 (P-TO220-3-1), through-hole, isolated tab (drain-connected). Standard three-terminal configuration with drain (D), gate (G), and source (S) leads.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (left, viewed front)	Source (S)	Common return path for load current; tied to PCB ground plane; low-inductance connection required for switching stability.
Lead 2 (center)	Drain (D)	Main power output terminal; electrically connected to metal tab; must be isolated from heatsink unless insulated mounting used.
Lead 3 (right)	Gate (G)	Control input; sensitive to ESD and ringing; requires RC snubber or gate resistor (4.7 Ω typical) for clean switching.

Key Features

Feature	Design Value
Logic-level gate drive	Turns on fully with 4.5 V gate voltage - eliminates external level shifters in 3.3 V MCU-based designs.
Avalanche-rated	170 mJ single-pulse energy handling - protects against inductive kickback in solenoid and motor control without external clamping.
Low R_DS(on) × Q_g FOM	~290 mΩ·nC - balances conduction and switching losses for optimal efficiency in 100–300 kHz SMPS applications.
175 °C operation	Rated junction temperature - enables use in high-ambient environments (e.g., engine bay, enclosed power cabinets) without derating penalties.
dv/dt ruggedness	6 kV/µs - suppresses false turn-on during fast voltage transients in half-bridge configurations.

Applications

Automotive Body Control Module (BCM)

Industrial DC Motor Driver

Use Scenario: Switching 12 V loads including headlights, fans, and window lift motors in vehicle BCMs.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling load current up to 73 A with PWM dimming/frequency modulation.

Use Value: 8.4 mΩ R_DS(on) minimizes heat generation in space-constrained modules; 175 °C rating ensures reliability across automotive temperature cycles.

Use Scenario: Driving brushed DC motors in factory automation conveyors and robotic actuators.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology, handling bidirectional current and regenerative braking energy.

Use Value: 170 mJ avalanche energy absorbs back-EMF spikes during rapid deceleration; 0.96 V body diode V_SD reduces freewheeling loss.

Server PSU OR-ing FET

High-Current Buck Converter

Use Scenario: Hot-swap and redundancy management in 12 V intermediate bus architectures.

IC Role / Device Role / Timing Role: OR-ing MOSFET replacing Schottky diodes to reduce forward drop and improve efficiency.

Use Value: Near-zero forward voltage (R_DS(on) × I_LOAD) cuts conduction loss by >70% vs. diode solutions; logic-level gate simplifies controller interface.

Use Scenario: Main synchronous rectifier in 12 V → 1 V/100 A point-of-load (POL) converters for AI accelerators.

IC Role / Device Role / Timing Role: Bottom-side switch operating at 300–500 kHz with tight dead-time control.

Use Value: 34.7 nC Q_g enables fast, low-loss transitions; 6.5 mΩ R_DS(on) at 4.5 V supports efficient 3.3 V gate drive from dedicated POL controllers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF (Infineon)	30 V, 140 A, 3.3 mΩ @ 10 V, TO-220AB; higher current but larger die and gate charge (65 nC).	Better for ultra-high-current 12 V systems (>100 A), but less efficient at mid-range frequencies due to higher Q_g.	Select when peak current exceeds 73 A and thermal headroom allows higher gate drive power.
STL110N3LLH6 (STMicroelectronics)	30 V, 110 A, 3.0 mΩ @ 10 V, PowerFLAT 5x6; surface-mount, no isolation, lower R_thJC (1.1 K/W).	Designed for compact SMD power stages; unsuitable for through-hole legacy designs or isolated heatsinking requirements.	Prefer for new SMT-based designs where board space and automated assembly are priorities over mechanical isolation.

Compared with IRL3803PbF and STL110N3LLH6, SPP73N03S2L08XK offers balanced performance for through-hole, thermally isolated 70–80 A applications with minimal gate drive complexity - ideal for cost-sensitive, medium-volume automotive and industrial power modules requiring proven reliability and straightforward thermal design.

Availability

SPP73N03S2L08XK is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drives, server OR-ing circuits, and high-current DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SPP73N03S2L08XK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to AEC-Q101 and IATF 16949 standards.

SPP73N03S2L08XK belongs to the OptiMOS™ 30 V logic-level power MOSFET product line, engineered for high-efficiency, high-reliability switching in automotive and industrial power conversion where low gate drive voltage, avalanche robustness, and thermal resilience are mandatory.

FAQ

Is SPP73N03S2L08XK pin-compatible with other TO-220-3 N-channel MOSFETs?

Yes - it uses standard TO-220-3 mechanical footprint and lead assignment (G-D-S from left to right, front view). However, electrical characteristics differ significantly: R_DS(on) (8.4 mΩ), Q_g (34.7 nC), and V_GS(th) (1.2–2.0 V) require verification against replacement part specs before drop-in substitution.

What is the maximum safe operating frequency for SPP73N03S2L08XK in a hard-switched buck converter?

With 34.7 nC Q_g and typical 4.7 Ω gate resistor, turn-on/off times are ~11.6 ns and ~47.3 ns respectively. For hard-switched operation, practical upper limit is ~500 kHz - beyond which switching losses dominate and thermal management becomes challenging without active cooling.

Does SPP73N03S2L08XK require a gate resistor, and what value is recommended?

Yes - a gate resistor is essential to damp ringing and control dV/dt. For 10 V gate drive and moderate switching speed, 4.7 Ω is recommended per Infineon's evaluation data. Lower values (2.2–3.3 Ω) increase switching speed but risk overshoot; higher values (>10 Ω) reduce EMI but raise switching losses.

Can SPP73N03S2L08XK be used in parallel configurations for higher current handling?

Yes - its positive temperature coefficient of R_DS(on) (increases with T_j) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical layout, and individual gate resistors (4.7 Ω each) to prevent oscillation; thermal coupling between devices must be minimized for stable balancing.

SPP73N03S2L08XK Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.4mOhm @ 36A, 10V

Vgs(th) (Max) @ Id:: 2V @ 55µA

Gate Charge (Qg) (Max) @ Vgs:: 46.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1710 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP73N03S2L08XK FAQ

1.How can I place an order for SPP73N03S2L08XK through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP73N03S2L08XK on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP73N03S2L08XK reliable?

The price and inventory of SPP73N03S2L08XK are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP73N03S2L08XK is usually 5 days.

3.What payment methods are accepted for SPP73N03S2L08XK?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP73N03S2L08XK transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP73N03S2L08XK?

SPP73N03S2L08XK orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP73N03S2L08XK order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP73N03S2L08XK?

For technical support, including SPP73N03S2L08XK datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP73N03S2L08XK requirements.

6.How does Aetrix verify that SPP73N03S2L08XK is sourced from the original manufacturer or authorized distributors?

All SPP73N03S2L08XK products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP73N03S2L08XK meets industry standards.

7.What is the process for return or replacement of SPP73N03S2L08XK?

All SPP73N03S2L08XK units undergo pre-shipment inspection (PSI). If there is an issue with SPP73N03S2L08XK, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP73N03S2L08XK part is unused and in its original packaging.

Return procedure for SPP73N03S2L08XK:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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