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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP80N03S2-03

Name: SPP80N03S2-03
Brand: Infineon Technologies
SKU: SPP80N03S2-03
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP80N03S2-03

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP80N03S2-03.pdf

Description:: MOSFET N-CH 30V 80A TO220-3

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Product details

Overview

SPP80N03S2-03 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO-220-3-1 package, rated for 30 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 2.6 mΩ typical R_DS(on) at V_GS = 10 V. It features avalanche rating (810 mJ single-pulse), 175 °C maximum junction temperature, and dv/dt ruggedness up to 6 kV/µs - deployed in high-current DC-DC output stages and motor drive half-bridges.

For engineers reviewing the SPP80N03S2-03 datasheet, SPP80N03S2-03 pinout, SPP80N03S2-03 application, or SPP80N03S2-03 equivalent, key selection criteria include R_DS(on) vs. thermal resistance trade-off, gate charge (Q_g = 110–150 nC), reverse diode recovery (Q_rr = 87–110 nC), and SOA compliance under pulsed load conditions.

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology optimized for low R_DS(on) × Q_g figure-of-merit (FOM), enabling high-efficiency switching in synchronous rectification and high-frequency buck converters. Its 0.3 K/W typical junction-to-case thermal resistance supports 300 W dissipation at T_C = 25 °C.

The MOSFET integrates a robust body diode with 80 A continuous forward current capability, 0.9–1.3 V V_SD at I_F = 80 A, and 65–80 ns t_rr. It is rated for repetitive avalanche energy (E_AR = 30 mJ) and withstands 6 kV/µs dv/dt stress without spurious turn-on.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage in off-state; defines use in ≤24 V nominal bus systems.
R_DS(on) max	3.4 mΩ at V_GS = 10 V, I_D = 80 A - Sets conduction loss floor in high-current paths (e.g., 21.8 W loss at 80 A).
I_D cont	80 A at T_C = 25 °C - Requires heatsinking to sustain full current; derates to ~40 A at T_C = 100 °C per curve.
Q_g	110–150 nC - Determines gate driver power requirement and switching speed in 100–500 kHz applications.
E_AS	810 mJ (single pulse) - Enables reliable operation under inductive load switching without external snubbers.
t_r/t_f	325–490 ns / 110–160 ns - Supports fast switching with minimal overlap loss in hard-switched topologies.
V_GS(th)	2.1–4.0 V - Ensures clean turn-on with standard 5 V or 3.3 V logic-level gate drivers.

Pinout & Package

Package: TO-220-3-1 (P-TO220-3-1), through-hole, isolated tab, lead-free, RoHS-compliant. Thermal pad electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node; carries full load current.
Pin 2 (Gate)	Control input	High-impedance MOS gate; requires <150 nC charge for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output	Connected to heatsink via metal tab; carries switched high-side or output current; electrically tied to case.

Key Features

Feature	Design Value
Optimized FOM (R_DS(on) × Q_g)	~340 mΩ·nC - Reduces combined conduction and switching losses in 100–300 kHz SMPS designs.
175 °C T_jmax	Enables operation in sealed enclosures or high-ambient environments without derating penalties beyond datasheet curves.
Avalanche-rated	810 mJ single-pulse E_AS - Eliminates need for external clamping in inductive load commutation (e.g., BLDC phase legs).
dv/dt ruggedness	6 kV/µs - Prevents false triggering during fast voltage transients in noisy industrial motor drives.
Low R_thJC	0.3 K/W typ - Allows direct mounting to aluminum heatsinks for >200 W thermal handling with minimal interface resistance.

Applications

DC-DC Converter Output Stage

Automotive Motor Drive Half-Bridge

Use Scenario: High-current synchronous rectifier in 12 V input, 1–5 V output buck converter for ADAS ECUs.

IC Role / Device Role / Timing Role: Low-side power switch conducting up to 80 A continuously; operates in hard-switched PWM mode at 250 kHz.

Use Value: 2.6 mΩ R_DS(on) limits conduction loss to <22 W at full load, enabling compact heatsink design without forced air.

Use Scenario: Upper-leg switch in 12 V automotive seat/mirror motor H-bridge with regenerative braking.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET driven by bootstrap gate driver; handles bidirectional current and flyback energy.

Use Value: Avalanche rating absorbs inductive kickback during PWM off-time; 175 °C rating ensures reliability under hood ambient extremes.

Industrial Power Supply OR-ing

Server VRM High-Current Phase

Use Scenario: OR-ing diode replacement in redundant 48 V telecom power shelf with hot-swap capability.

IC Role / Device Role / Timing Role: Unidirectional power path controller; conducts only when V_IN > V_OUT; blocks reverse current.

Use Value: Body diode V_SD = 0.9 V enables lower forward drop than Schottky alternatives; Q_rr = 87 nC minimizes reverse recovery loss.

Use Scenario: Phase-leg switch in 400 A server CPU VRM using multiphase interleaved buck topology.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch operating at 500 kHz with 30 A per phase.

Use Value: 3.4 mΩ max R_DS(on) and 150 nC Q_g balance efficiency and gate drive complexity across 6–12 phases.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PbF	R_DS(on) = 4.0 mΩ (max), Q_g = 131 nC, T_jmax = 175 °C, TO-220AB package	Higher conduction loss (≈1.5×), similar thermal rating; lacks specified dv/dt rating and E_AS test data	Acceptable where cost sensitivity outweighs 15% efficiency penalty and ruggedness requirements are relaxed.
STP80NF55-08	R_DS(on) = 8.0 mΩ (max), Q_g = 120 nC, T_jmax = 175 °C, TO-220FP package	Double R_DS(on), same voltage class; higher thermal resistance (R_thJC = 0.75 K/W); not avalanche rated	Only suitable for lower-current (<40 A) or space-constrained designs where footprint matches but performance margin is reduced.

Compared with IRF1404PbF and STP80NF55-08, SPP80N03S2-03 delivers superior conduction efficiency, verified dv/dt immunity, and guaranteed avalanche energy - critical for motor control and high-reliability power conversion where transient robustness is non-negotiable.

Availability

SPP80N03S2-03 is available at Aetrix Electronics and suitable for automotive motor drives, industrial DC-DC converters, and server VRM phase-leg applications requiring stable component supply and long-term manufacturability.

Supply support for SPP80N03S2-03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

SPP80N03S2-03 belongs to the OptiMOS™ 30 V product line, engineered specifically for high-current, high-efficiency switching in automotive body electronics, industrial motor drives, and computing power delivery systems.

FAQ

Is SPP80N03S2-03 suitable for 5 V gate drive?

No - its gate threshold voltage range is 2.1–4.0 V, but full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on). At 5 V, R_DS(on) rises sharply (>10 mΩ), increasing conduction loss significantly. Use with 10 V or 12 V gate drivers for optimal performance.

What is the maximum PCB copper area required for thermal performance?

Per datasheet Page 2, the SMD version requires 6 cm² of 70 µm thick copper on FR4 for R_thJA = 40 K/W. For the TO-220-3-1 variant (SPP80N03S2-03), thermal performance depends on heatsink mounting: with proper thermal paste and 100 cm² aluminum heatsink, R_thJA can reach ~1.5 K/W.

Does it have a fully rated body diode for synchronous rectification?

Yes - the integrated body diode supports 80 A continuous forward current at T_C = 25 °C and has characterized reverse recovery parameters: t_rr = 65–80 ns and Q_rr = 87–110 nC. These values enable use in synchronous rectification, though external Schottky diodes may be preferred for ultra-low V_SD.

How does its avalanche rating compare to standard industrial MOSFETs?

SPP80N03S2-03 is fully specified for single-pulse avalanche energy (E_AS = 810 mJ) and repetitive avalanche (E_AR = 30 mJ), unlike many general-purpose MOSFETs that omit avalanche testing. This allows safe operation in inductive switching without snubber circuits in motor drive and relay drive applications.

SPP80N03S2-03 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7020 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP80N03S2-03 FAQ

1.How can I place an order for SPP80N03S2-03 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP80N03S2-03 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP80N03S2-03 reliable?

The price and inventory of SPP80N03S2-03 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N03S2-03 is usually 5 days.

3.What payment methods are accepted for SPP80N03S2-03?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N03S2-03 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP80N03S2-03?

SPP80N03S2-03 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP80N03S2-03 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP80N03S2-03?

For technical support, including SPP80N03S2-03 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N03S2-03 requirements.

6.How does Aetrix verify that SPP80N03S2-03 is sourced from the original manufacturer or authorized distributors?

All SPP80N03S2-03 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N03S2-03 meets industry standards.

7.What is the process for return or replacement of SPP80N03S2-03?

All SPP80N03S2-03 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N03S2-03, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP80N03S2-03 part is unused and in its original packaging.

Return procedure for SPP80N03S2-03:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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