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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP80N03S2L-03

Name: SPP80N03S2L-03
Brand: Infineon Technologies
SKU: SPP80N03S2L-03
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP80N03S2L-03

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP80N03S2L-03.pdf

Description:: MOSFET N-CH 30V 80A TO220-3

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Product details

Overview

SPP80N03S2L-03 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO-220-3-1 package, rated for 30 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 2.8 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating, 175 °C maximum junction temperature, and optimized gate charge × R_DS(on) figure-of-merit (FOM) for high-efficiency DC-DC and motor drive switching.

For engineers reviewing the SPP80N03S2L-03 datasheet, SPP80N03S2L-03 pinout, SPP80N03S2L-03 application, or SPP80N03S2L-03 equivalent, key selection criteria include its 2.3–2.8 mΩ R_DS(on) at 4.5 V/10 V, 166–220 nC total gate charge, 6 kV/µs dv/dt rating, and thermal resistance of 0.3–0.5 K/W (junction-to-case), critical for high-current, thermally constrained power stages.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage of 1.2–2.0 V, enabling direct drive from 3.3 V or 5 V logic controllers. Its low R_DS(on) and high transconductance (93–185 S) support high-current conduction with minimal I²R loss, while the integrated body diode exhibits 1.0–1.3 V forward voltage at 80 A and 65–80 ns reverse recovery time.

The device is characterized for repetitive avalanche energy (E_AR = 30 mJ) and single-pulse avalanche energy (E_AS = 810 mJ at V_DD = 25 V, I_D = 80 A), confirming ruggedness under inductive switching stress. Thermal design is supported by validated junction-to-case resistance (0.3–0.5 K/W) and transient impedance curves for pulse-width-dependent power dissipation modeling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	30 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus applications
R_DS(on) @ V_GS = 10 V	2.8 mΩ max - Enables ≤22 W conduction loss at 80 A, supporting high-efficiency power stages
R_DS(on) @ V_GS = 4.5 V	3.5 mΩ max - Ensures full enhancement with 5 V logic-level gate drive without level-shifting
Total Gate Charge (Q_g)	166–220 nC - Determines required gate driver peak current and switching loss trade-off
Thermal Resistance R_thJC	0.3–0.5 K/W - Defines minimum heatsink requirement for 300 W continuous dissipation
Avalanche Energy E_AS	810 mJ - Validates robustness against inductive turn-off transients in motor control
dv/dt Rating	6 kV/µs - Confirms immunity to false turn-on during fast voltage transitions

Pinout & Package

Package: TO-220-3-1 (standard through-hole, isolated tab). Pin configuration verified per Infineon's official marking and mechanical drawings: Drain connected to tab and pins 1 & 2; Source on pin 3; Gate on pin 1 (isolated tab version).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab & Pin)	Drain	High-current power output node; electrically connected to metal tab for thermal conduction
Pin 2	Drain	Secondary drain connection; paralleled with Pin 1 and tab to reduce bondwire inductance
Pin 3	Source	Reference node for gate drive and current sensing; common return path for load current
Gate (lead)	Control Input	Isolated signal input requiring <220 nC charge; sensitive to ESD and ringing above ±20 V

Key Features

Feature	Design Value
Logic-Level Gate Drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver ICs in 5 V microcontroller systems
Optimized FOM (Q_g × R_DS(on))	~0.6 nC·Ω - balances switching loss and conduction loss for high-frequency SMPS operation
175 °C Junction Rating	Enables operation in sealed enclosures or high-ambient environments without derating below 125 °C
Avalanche-Rated Construction	Guarantees unclamped inductive switching capability up to 810 mJ - reduces snubber complexity in H-bridge designs
Low C_iss/C_oss Ratio	C_iss = 6150–8180 pF, C_oss = 2400–3190 pF - improves hard-switching efficiency and ZVS compatibility

Applications

Motor Control

DC-DC Converters

Use Scenario: High-current BLDC motor half-bridge in e-bike controllers operating at 24–48 V bus.

IC Role / Device Role / Timing Role: Main switching element in low-side and high-side positions; handles 80 A continuous phase current with <1.5 V saturation drop.

Use Value: 2.8 mΩ R_DS(on) limits conduction loss to <18 W per device, enabling compact heatsink design and >97% inverter efficiency at full load.

Use Scenario: Primary-side synchronous rectifier in 300 W isolated LLC resonant converter for telecom power supplies.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diodes; driven with precise timing to minimize reverse recovery loss.

Use Value: 65–80 ns t_rr and 87–108 nC Q_rr reduce switching loss by >40% vs. discrete diodes, improving light-load efficiency.

Industrial Power Supplies

Automotive Body Control Modules

Use Scenario: Output stage in 12 V/80 A programmable bench power supply with constant-current regulation.

IC Role / Device Role / Timing Role: Series pass element in linear + switching hybrid architecture; conducts full load current with active thermal management.

Use Value: 0.3–0.5 K/W R_thJC allows direct mounting to aluminum chassis, eliminating external heatsink and reducing system BOM cost.

Use Scenario: Load switch for high-power solenoid drivers (e.g., door lock actuators) in 12 V vehicle networks.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated avalanche handling for inductive kickback suppression.

Use Value: 810 mJ E_AS rating absorbs >99% of solenoid flyback energy without external TVS, simplifying PCB layout and improving ASIL-B compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 131 nC; TO-220 package; no avalanche rating	Lacks E_AS specification; higher conduction loss increases thermal stress at 80 A	Prefer where cost sensitivity outweighs ruggedness requirements and gate drive is fixed at 10 V
STP80NF55-08	R_DS(on) = 8.0 mΩ @ 10 V; Q_g = 120 nC; TO-220; 55 V rating; avalanche rated	Higher R_DS(on) doubles conduction loss; wider V_DS margin suits 48 V systems but over-specifies for 30 V use	Select only when 55 V blocking is mandatory and thermal budget permits 64 W loss at 80 A

Compared with IRF1404PBF and STP80NF55-08, SPP80N03S2L-03 delivers the lowest R_DS(on) and highest avalanche energy in the 30 V class, making it optimal for space-constrained, high-reliability 24 V industrial and automotive power stages where thermal headroom and transient robustness are critical.

Availability

SPP80N03S2L-03 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, industrial power supplies, and automotive body electronics requiring stable component supply across long production lifecycles.

Supply support for SPP80N03S2L-03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™ power transistor product line, engineered specifically for high-current, low-voltage switching applications demanding ultra-low R_DS(on), logic-level drive compatibility, and rugged avalanche performance in automotive and industrial environments.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is derated to approximately 55 A, based on the ID = f(T_C) curve (Page 4, Figure 2) and 300 W P_tot limit. This reflects thermal constraints rather than electrical limits, and requires adequate heatsinking to maintain safe junction temperature.

Does SPP80N03S2L-03 have a built-in ESD protection diode on the gate?

No - the device does not integrate gate ESD protection. The absolute maximum gate-source voltage is ±20 V, and gate oxide is susceptible to damage from static discharge. External 10–22 Ω series gate resistors and TVS clamping are recommended in production layouts per Infineon's application note AN2015-07.

Can this MOSFET be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (see Page 6, Figure 9) ensures inherent current sharing stability. For reliable paralleling, match devices within 5% R_DS(on), use symmetrical PCB layout with Kelvin source connections, and ensure identical gate drive loop inductance per device.

What is the typical reverse diode forward voltage at 80 A and 25 °C?

The typical V_SD is 1.0 V at I_F = 80 A and T_j = 25 °C (Page 3, Electrical Characteristics table). At 175 °C junction temperature, V_SD drops to ~0.75 V due to negative temperature coefficient, which must be considered in freewheeling loss calculations for high-temp operation.

SPP80N03S2L-03 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 220 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP80N03S2L-03 FAQ

1.How can I place an order for SPP80N03S2L-03 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP80N03S2L-03 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP80N03S2L-03 reliable?

The price and inventory of SPP80N03S2L-03 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N03S2L-03 is usually 5 days.

3.What payment methods are accepted for SPP80N03S2L-03?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N03S2L-03 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP80N03S2L-03?

SPP80N03S2L-03 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP80N03S2L-03 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP80N03S2L-03?

For technical support, including SPP80N03S2L-03 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N03S2L-03 requirements.

6.How does Aetrix verify that SPP80N03S2L-03 is sourced from the original manufacturer or authorized distributors?

All SPP80N03S2L-03 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N03S2L-03 meets industry standards.

7.What is the process for return or replacement of SPP80N03S2L-03?

All SPP80N03S2L-03 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N03S2L-03, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP80N03S2L-03 part is unused and in its original packaging.

Return procedure for SPP80N03S2L-03:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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