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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP80N03S2L05AKSA1

Name: SPP80N03S2L05AKSA1
Brand: Infineon Technologies
SKU: SPP80N03S2L05AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP80N03S2L05AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP80N03S2L05AKSA1.pdf

Description:: MOSFET N-CH 30V 80A TO220-3

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Product details

Overview

SPP80N03S2L05AKSA1 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO-220 package, rated for 30 V V_DS, 5.2 mΩ R_DS(on) at V_GS = 4.5 V and I_D = 55 A, 80 A continuous drain current, and 175 °C maximum junction temperature. It delivers high-current switching in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the SPP80N03S2L05AKSA1 datasheet, SPP80N03S2L05AKSA1 pinout, SPP80N03S2L05AKSA1 application, or SPP80N03S2L05AKSA1 equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), avalanche rating, dv/dt ruggedness, and thermal resistance of 0.6–0.9 K/W junction-to-case.

Technical Context

This OptiMOS™ device uses trench-gate silicon technology optimized for low conduction and switching losses in high-efficiency 30 V systems. Its logic-level gate enables direct drive from 3.3 V/5 V microcontrollers without level-shifting, and its 175 °C operation supports compact thermal design in space-constrained industrial environments.

The MOSFET features a robust body diode with 46.5–58.1 ns reverse recovery time and 55.5–69.4 nC Q_rr, enabling reliable synchronous rectification and freewheeling in hard-switched topologies. Its 6 kV/µs dv/dt rating and 325 mJ single-pulse avalanche energy ensure resilience against voltage transients and inductive kickback.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V nominal bus systems and automotive 12 V/24 V applications.
R_DS(on) @ V_GS = 4.5 V	5.2 mΩ - Enables <1 W conduction loss at 55 A, critical for high-current low-voltage switch-mode power stages.
I_D (continuous)	80 A - Supports high-power loads such as BLDC motor phases and battery protection circuits without external heatsink derating.
Q_g total	67.5–89.7 nC - Low gate charge reduces driver power demand and enables fast 10–15 ns turn-on delay with minimal gate drive strength.
R_thJC	0.6–0.9 K/W - Allows efficient heat transfer to heatsink; enables >150 W power dissipation at T_C = 25 °C.
E_AS	325 mJ - Withstands single-pulse inductive energy without failure, eliminating need for external snubbers in relay/motor drive flyback paths.
T_j max	175 °C - Permits operation in harsh ambient environments (e.g., engine compartments, industrial enclosures) without thermal shutdown.

Pinout & Package

Package: TO-220-3-1 (standard through-hole, isolated tab). Pin assignment verified per Infineon's official marking and mechanical drawings for SPP80N03S2L-05.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector / heatsink interface	Electrically connected to metal tab; must be electrically isolated from chassis unless system ground reference permits.
Source	Reference node for gate control and current return	Low-inductance connection point for gate driver return and sense resistor placement in high-side or low-side configurations.
Gate	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD; requires RC snubber or gate resistor for oscillation suppression.

Key Features

Feature	Design Value
Logic-level gate threshold	V_GS(th) = 1.2–2.0 V enables direct drive from 3.3 V MCUs without gate driver ICs.
Optimized FOM (Q_g × R_DS(on))	~350–470 pC·Ω - balances switching speed and conduction loss for high-frequency (<500 kHz) SMPS designs.
Avalanche-rated	325 mJ single-pulse E_AS - eliminates need for external clamping in inductive load switching.
dv/dt ruggedness	6 kV/µs - prevents false turn-on during fast voltage transients in noisy industrial environments.
Thermal performance	R_thJC = 0.6 K/W typ - supports >160 W continuous dissipation with modest heatsinking.

Applications

Motor Drive Inverter Stage

DC-DC Synchronous Rectifier

Use Scenario: High-current half-bridge leg in 24 V BLDC motor controller driving 5–10 kW industrial fans or pumps.

IC Role / Device Role / Timing Role: Low-side power switch handling 80 A peak phase current with <10 ns timing margin for PWM dead-time control.

Use Value: 5.2 mΩ R_DS(on) minimizes I²R loss at full load, reducing heatsink size by 35% vs. 8 mΩ alternatives.

Use Scenario: Secondary-side synchronous rectifier in 30 V output, 100 A telecom DC-DC brick operating at 300 kHz.

IC Role / Device Role / Timing Role: Fast-recovery body diode and low-Q_g enable precise gate timing synchronized to primary-side PWM.

Use Value: 46.5 ns t_rr and 55.5 nC Q_rr reduce reverse recovery loss by >40% versus standard Schottky alternatives.

Battery Protection Circuit

Industrial Power Distribution Switch

Use Scenario: Bidirectional overcurrent and short-circuit protection for 24 V LiFePO₄ battery packs in material handling equipment.

IC Role / Device Role / Timing Role: Main power path switch with integrated overtemperature and avalanche energy absorption capability.

Use Value: 175 °C T_j max and 325 mJ E_AS allow safe interruption of 300 A fault currents without catastrophic failure.

Use Scenario: Hot-swap and inrush current limiting in programmable logic controller (PLC) backplane power modules.

IC Role / Device Role / Timing Role: High-reliability load switch with controlled turn-on via gate resistor network and dv/dt immunity.

Use Value: 6 kV/µs dv/dt rating prevents spurious turn-on during hot-plug events, ensuring stable 24 V rail sequencing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.0 mΩ @ 10 V but requires 10 V gate drive; no logic-level compatibility; higher Q_g (131 nC).	Not suitable for 3.3 V MCU drive; better for fixed 12 V gate drive systems with lower switching frequency.	Select only if gate drive voltage ≥10 V and thermal margin allows higher R_thJC (1.2 K/W).
STL220N3LLH6	Same 30 V/80 A rating, 3.7 mΩ @ 4.5 V, but in PowerFLAT 5x6 package; no isolation, surface-mount only.	Requires PCB-level thermal management; unsuitable for through-hole or heatsink-mounted designs.	Prefer for space-constrained, high-density layouts where TO-220 mounting is impractical.

Compared with IRF1404PBF and STL220N3LLH6, SPP80N03S2L05AKSA1 uniquely combines logic-level drive, TO-220 isolation, and industry-leading FOM-making it optimal for industrial motor controllers needing MCU-direct control and field-serviceable heatsinking.

Availability

SPP80N03S2L05AKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, high-current DC-DC converters, and battery protection circuits requiring stable component supply and long-term lifecycle support.

Supply support for SPP80N03S2L05AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

SPP80N03S2L05AKSA1 belongs to the OptiMOS™ 30 V logic-level power MOSFET product line, engineered for high-efficiency, high-current switching in industrial automation, motor control, and power supply applications.

FAQ

What is the maximum safe operating temperature for SPP80N03S2L05AKSA1?

The absolute maximum junction temperature is +175 °C, and the device is fully specified across –55 °C to +175 °C. Derating begins above T_C = 25 °C per the P_tot vs. T_C curve on page 4 of the datasheet, with thermal resistance R_thJC = 0.6–0.9 K/W defining heatsink requirements.

Can SPP80N03S2L05AKSA1 be driven directly by a 3.3 V microcontroller GPIO?

Yes. With V_GS(th) = 1.2–2.0 V and guaranteed R_DS(on) at V_GS = 4.5 V, the device achieves low on-resistance even with 3.3 V gate drive (typical R_DS(on) ≈ 7.2 mΩ). For full 5.2 mΩ performance, a 5 V gate driver is recommended.

Does SPP80N03S2L05AKSA1 have avalanche capability, and is it production-tested?

Yes, it is avalanche-rated with 325 mJ single-pulse E_AS at I_D = 80 A, V_DD = 25 V, and R_GS = 25 Ω. While avalanche capability is defined by design and not 100% production-tested, Infineon qualifies this parameter per JEDEC JESD24-1 and applies statistical process controls to ensure compliance.

How does the body diode performance compare to external Schottky diodes in synchronous rectification?

The integrated body diode has t_rr = 46.5–58.1 ns and Q_rr = 55.5–69.4 nC, outperforming many 30 V Schottky diodes in reverse recovery behavior. Its soft recovery characteristic reduces EMI, and co-packaging eliminates layout parasitics-enabling higher efficiency than discrete Schottky solutions in 200–500 kHz DC-DC converters.

SPP80N03S2L05AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.2mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:: 2V @ 110µA

Gate Charge (Qg) (Max) @ Vgs:: 89.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3320 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP80N03S2L05AKSA1 FAQ

1.How can I place an order for SPP80N03S2L05AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP80N03S2L05AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP80N03S2L05AKSA1 reliable?

The price and inventory of SPP80N03S2L05AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N03S2L05AKSA1 is usually 5 days.

3.What payment methods are accepted for SPP80N03S2L05AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N03S2L05AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP80N03S2L05AKSA1?

SPP80N03S2L05AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP80N03S2L05AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP80N03S2L05AKSA1?

For technical support, including SPP80N03S2L05AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N03S2L05AKSA1 requirements.

6.How does Aetrix verify that SPP80N03S2L05AKSA1 is sourced from the original manufacturer or authorized distributors?

All SPP80N03S2L05AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N03S2L05AKSA1 meets industry standards.

7.What is the process for return or replacement of SPP80N03S2L05AKSA1?

All SPP80N03S2L05AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N03S2L05AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP80N03S2L05AKSA1 part is unused and in its original packaging.

Return procedure for SPP80N03S2L05AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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