Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP80N04S2-H4

Name: SPP80N04S2-H4
Brand: Infineon Technologies
SKU: SPP80N04S2-H4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SPP80N04S2-H4

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP80N04S2-H4.pdf

Description:: MOSFET N-CH 40V 80A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,750

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SPP80N04S2-H4 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO-220 package, rated for 40 V V_DS, 4 mΩ R_DS(on) at 10 V V_GS, and 80 A continuous drain current at T_C = 25 °C. It features 175 °C maximum junction temperature, avalanche rating (660 mJ single-pulse), and dv/dt ruggedness (6 kV/µs), enabling use in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPP80N04S2-H4 datasheet, SPP80N04S2-H4 pinout, SPP80N04S2-H4 application, or SPP80N04S2-H4 equivalent, key selection criteria include R_DS(on) vs. temperature stability, gate charge (Q_g = 111–148 nC), reverse diode forward voltage (V_SD = 0.9–1.3 V), and thermal resistance (R_thJC = 0.35–0.5 K/W).

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its 4430–5890 pF input capacitance (C_iss) and 47–70 nC gate-to-drain charge (Q_gd) support efficient hard-switching operation up to 100 kHz in synchronous rectification and BLDC motor control topologies.

The integrated body diode exhibits 195–240 ns reverse recovery time (t_rr) and 370–460 nC reverse recovery charge (Q_rr), with specified dv/dt immunity up to 6 kV/µs under defined test conditions (I_S = 80 A, V_DS = 32 V, di/dt = 200 A/µs), confirming robust commutation capability in inductive load circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage before avalanche onset; supports 36 V nominal bus systems with 10% margin.
R_DS(on)	3.4–4 mΩ @ V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at 80 A, critical for high-efficiency power stages.
I_D (cont.)	80 A @ T_C = 25 °C - Continuous current rating limited by bondwire; derates to ~50 A at T_C = 100 °C per curve on Page 4.
E_AS	660 mJ (single pulse) - Energy-handling capability during inductive turn-off; supports reliable operation without external snubbers.
Q_g	111–148 nC - Total gate charge determines driver strength requirement; impacts switching loss and gate drive power.
R_thJC	0.35–0.5 K/W - Junction-to-case thermal resistance defines heatsink interface requirements for thermal management.
V_GS(th)	2.1–4 V - Gate threshold range ensures clean turn-on with standard 5 V or 3.3 V logic-level drivers when used with appropriate margin.

Pinout & Package

Package: TO-220-3-1 (P-TO220-3-1), through-hole, isolated tab, leaded configuration with drain-connected tab for direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically connected to metal tab; requires insulated mounting hardware when heatsink is grounded.
Source	Reference node for gate drive and current return	Low-inductance connection point for sense resistor placement and gate driver ground reference.
Gate	Control terminal for channel modulation	High-impedance input requiring low-ESR gate resistor (RG = 1.3 Ω typical in characterization) to control dv/dt and ringing.

Key Features

Feature	Design Value
Avalanche-rated operation	660 mJ single-pulse energy handling enables robustness against inductive switching transients without external protection.
175 °C maximum junction temperature	Supports operation in high-ambient environments (e.g., automotive engine compartments, industrial motor drives) with extended thermal headroom.
dv/dt ruggedness	Rated for 6 kV/µs under specified test conditions, reducing risk of false turn-on in high-noise half-bridge configurations.
Low R_DS(on) × Q_g figure-of-merit	Typical 4 mΩ × 125 nC = 500 mΩ·nC - balances conduction and switching losses for high-frequency power conversion.
Optimized body diode	V_SD = 0.9–1.3 V and t_rr = 195–240 ns enable efficient synchronous rectification and reduced reverse recovery loss.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Rectifier

Use Scenario: High-current BLDC motor phase leg in e-bike controllers or industrial servo drives operating from 24–48 V battery buses.

IC Role / Device Role / Timing Role: Low-side switch in complementary PWM-controlled half-bridge; handles bidirectional current during regeneration.

Use Value: 4 mΩ R_DS(on) minimizes I²R loss at 80 A peak, while 660 mJ E_AS withstands flyback energy during rapid deceleration.

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V–12 V buck-derived DC-DC converters for telecom and server power supplies.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven in anti-phase with primary-side switch.

Use Value: V_SD = 0.9–1.3 V and t_rr = 195–240 ns reduce conduction and recovery losses versus 0.5 V Schottky with >500 ns t_rr.

Automotive Body Control Module

Industrial Power Distribution Switch

Use Scenario: Load switch for high-power lighting (LED headlamps, fog lamps) and HVAC actuators in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: High-side or low-side protected switch with integrated overtemperature and short-circuit resilience.

Use Value: 175 °C T_jmax and avalanche rating ensure reliability under load dump (ISO 7637-2) and inductive kick events.

Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller (PLC) output modules controlling solenoids and contactors.

IC Role / Device Role / Timing Role: Main power path switch with fast turn-on/off and controlled dv/dt to suppress EMI in noisy factory environments.

Use Value: 6 kV/µs dv/dt rating prevents spurious turn-on during rapid bus transients; TO-220 package allows direct heatsink mounting for 80 A steady-state loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PbF	R_DS(on) = 4.7 mΩ (higher), Q_g = 131 nC (comparable), T_jmax = 175 °C (same)	Lower efficiency at high current due to +17.5% R_DS(on); identical thermal envelope and pinout.	Acceptable where marginal conduction loss increase is tolerable and legacy design reuse is prioritized.
STP80NF55-08	R_DS(on) = 8 mΩ (double), Q_g = 140 nC, avalanche rated (E_AS = 520 mJ)	Higher conduction loss limits usable current to ~55 A at same thermal conditions; lower E_AS reduces fault margin.	Only suitable for cost-sensitive designs where peak current remains below 60 A and fault energy is constrained.

Compared with IRF1404PbF and STP80NF55-08, SPP80N04S2-H4 delivers superior conduction efficiency at full 80 A load, tighter R_DS(on) tolerance, and higher single-pulse avalanche energy-making it optimal for thermally constrained, high-reliability power stages.

Availability

SPP80N04S2-H4 is available at Aetrix Electronics and suitable for motor drive half-bridges, DC-DC synchronous rectifiers, and automotive body control modules requiring stable component supply and long-term industrial lifecycle support.

Supply support for SPP80N04S2-H4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ power transistor product line, engineered specifically for high-current, high-efficiency switching applications in automotive, industrial, and computing power systems where low R_DS(on) and robust transient handling are critical.

FAQ

What is the maximum safe operating temperature for SPP80N04S2-H4?

The absolute maximum junction temperature is 175 °C, and the storage temperature range is –55 °C to +175 °C. Derating curves on Page 4 show that continuous drain current drops to approximately 50 A at case temperature (T_C) = 100 °C. Thermal design must maintain T_j ≤ 175 °C under worst-case power dissipation and ambient conditions.

Is SPP80N04S2-H4 suitable for 5 V logic-level gate drive?

Yes - its gate threshold voltage (V_GS(th)) ranges from 2.1 V to 4.0 V, and it achieves full enhancement (R_DS(on) ≤ 4 mΩ) at V_GS = 10 V. With 5 V drive, R_DS(on) increases significantly (see Page 6 curve); for reliable 80 A operation, 10 V drive is required. For 5 V systems, a gate driver with bootstrap or charge-pump boost is recommended.

Does SPP80N04S2-H4 have a fully rated body diode for reverse conduction?

Yes - the integrated body diode is rated for 80 A continuous forward current (I_S) and 320 A pulsed (I_SM). Its forward voltage is 0.9–1.3 V at 80 A, and reverse recovery time is 195–240 ns. These parameters are fully characterized and guaranteed, making it suitable for synchronous rectification and freewheeling in inductive switching applications.

How does the avalanche rating impact system-level design?

The 660 mJ single-pulse avalanche energy (E_AS) allows the device to absorb inductive energy during unclamped inductive switching (UIS) events without failure. This eliminates the need for external clamping components in many motor drive and relay-driving applications, simplifying PCB layout and improving reliability - provided the event remains within the specified test conditions (I_D = 80 A, V_DD = 25 V, R_GS = 25 Ω).

SPP80N04S2-H4 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 148 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5890 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP80N04S2-H4 FAQ

1.How can I place an order for SPP80N04S2-H4 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP80N04S2-H4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP80N04S2-H4 reliable?

The price and inventory of SPP80N04S2-H4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N04S2-H4 is usually 5 days.

3.What payment methods are accepted for SPP80N04S2-H4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N04S2-H4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP80N04S2-H4?

SPP80N04S2-H4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP80N04S2-H4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP80N04S2-H4?

For technical support, including SPP80N04S2-H4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N04S2-H4 requirements.

6.How does Aetrix verify that SPP80N04S2-H4 is sourced from the original manufacturer or authorized distributors?

All SPP80N04S2-H4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N04S2-H4 meets industry standards.

7.What is the process for return or replacement of SPP80N04S2-H4?

All SPP80N04S2-H4 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N04S2-H4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP80N04S2-H4 part is unused and in its original packaging.

Return procedure for SPP80N04S2-H4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…