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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP80N04S2L-03

Name: SPP80N04S2L-03
Brand: Infineon Technologies
SKU: SPP80N04S2L-03
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP80N04S2L-03

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP80N04S2L-03.pdf

Description:: MOSFET N-CH 40V 80A TO220-3

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Product details

Overview

SPP80N04S2L-03 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO-220-3 package, rated for 40 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 3.1 mΩ max R_DS(on) at V_GS = 10 V. It features avalanche rating, 175 °C operating temperature, and dv/dt ruggedness-designed for high-efficiency DC-DC converters and motor control stages in industrial power supplies.

For engineers reviewing the SPP80N04S2L-03 datasheet, SPP80N04S2L-03 pinout, SPP80N04S2L-03 application, or SPP80N04S2L-03 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, unclamped inductive switching capability (E_AS = 810 mJ), thermal resistance (R_thJC = 0.5 K/W), and integrated body diode recovery performance (Q_rr = 145–180 nC).

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve low on-resistance with fast switching dynamics. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from 3.3 V/5 V microcontrollers without gate drivers.

The MOSFET supports robust unclamped inductive switching up to 810 mJ at T_j = 25 °C and exhibits controlled reverse recovery (t_rr = 62–78 ns, Q_rr = 145–180 nC), reducing voltage overshoot and EMI in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage before avalanche onset; defines use in ≤36 V nominal bus systems.
R_DS(on) max	3.1 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 80 A, critical for high-current synchronous rectification.
I_D cont.	80 A @ T_C = 25 °C - Continuous current rating limited by package thermal resistance (R_thJC = 0.5 K/W).
E_AS	810 mJ - Single-pulse avalanche energy at I_D = 80 A, V_DD = 25 V; supports reliable operation under inductive fault conditions.
Q_g	160–213 nC - Total gate charge determines driver strength requirement and switching loss trade-off in PWM applications.
t_r/t_f	83–125 ns / 80–120 ns - Fast turn-on/turn-off times enable >100 kHz switching in SMPS without excessive gate drive power.
V_GS(th)	1.2–2.0 V - Logic-level threshold ensures full enhancement with 3.3 V MCU outputs, eliminating level-shifting needs.
Q_rr	145–180 nC - Low reverse recovery charge minimizes commutation losses and ringing when used as synchronous rectifier.

Pinout & Package

Package: TO-220-3 (P-TO220-3-1), through-hole, isolated tab (drain-connected). Thermal pad requires mechanical mounting to heatsink; no solderable thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output	Electrically connected to metal tab; must be insulated from chassis unless system ground reference permits.
Source	Reference node for gate drive and current sensing	Low-inductance return path for load current; critical for stable gate control and accurate shunt-based sensing.
Gate	Control terminal	High-impedance input requiring <213 nC charge; sensitive to ESD and ringing-requires RC snubber or gate resistor ≥1.1 Ω per datasheet test condition.

Key Features

Feature	Design Value
Avalanche-rated operation	Guarantees survivability during unclamped inductive switching events up to 810 mJ without parameter degradation.
175 °C maximum junction temperature	Enables compact thermal design in sealed enclosures or high-ambient environments (e.g., industrial motor drives).
dv/dt ruggedness	Rated for 6 kV/µs - prevents false turn-on during high-slew-rate voltage transients in half-bridge configurations.
Logic-level gate drive	V_GS(th) ≤ 2.0 V allows direct interface with 3.3 V/5 V digital controllers, reducing BOM count and layout complexity.
Optimized body diode	Q_rr = 145–180 nC and t_rr = 62–78 ns support efficient synchronous rectification in buck and LLC topologies.

Applications

Motor Drive Inverter Stage

DC-DC Synchronous Rectifier

Use Scenario: High-current H-bridge for 24–48 V BLDC motor control in automated guided vehicles.

IC Role / Device Role / Timing Role: Low-side switching element handling 80 A peak phase current with <3.1 mΩ conduction loss.

Use Value: Reduces heat sink size by 35% vs. comparable 5 mΩ MOSFETs while maintaining 175 °C thermal margin.

Use Scenario: Secondary-side switch in 48 V → 12 V isolated DC-DC converter for telecom power shelves.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to minimize forward drop and improve efficiency above 20 A.

Use Value: Achieves >95% efficiency at 60 A load due to low R_DS(on) and controlled Q_rr-driven commutation loss.

Industrial UPS Output Stage

Hot-Swap OR-ing FET

Use Scenario: Bidirectional power path in modular 3 kW UPS inverters with battery backup.

IC Role / Device Role / Timing Role: High-current, avalanche-rugged switch managing bidirectional energy flow between DC bus and inverter bridge.

Use Value: Withstands repetitive 810 mJ inductive spikes during grid-to-battery transfer without derating or external clamping.

Use Scenario: OR-ing FET in redundant 48 V server power distribution units.

IC Role / Device Role / Timing Role: Low-R_DS(on) pass transistor enabling <10 mV dropout at 80 A, minimizing power loss and thermal rise.

Use Value: Enables single-FET hot-swap implementation with <3.1 mΩ R_DS(on), reducing board area vs. dual-MOSFET solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PbF	R_DS(on) = 4.0 mΩ @ 10 V; higher Q_g (190 nC); no specified avalanche rating	Limited to non-fault-tolerant designs; unsuitable for unclamped inductive loads	Select only if cost sensitivity outweighs reliability requirements and thermal margin is ample.
STP80NF55-08	R_DS(on) = 8.0 mΩ @ 10 V; lower V_DS (55 V); higher R_thJC (0.75 K/W)	Requires larger heatsink at 80 A; not logic-level (V_GS(th) = 2–4 V)	Prefer where 55 V rating is mandatory and gate drive voltage ≥10 V is available.

Compared with IRF1404PbF and STP80NF55-08, SPP80N04S2L-03 delivers superior conduction efficiency (3.1 mΩ), guaranteed avalanche ruggedness, and true logic-level drive-making it optimal for space-constrained, high-reliability 40 V industrial power stages.

Availability

SPP80N04S2L-03 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and UPS output stages requiring stable component supply and long-term manufacturability.

Supply support for SPP80N04S2L-03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

SPP80N04S2L-03 belongs to the OptiMOS™ power transistor family, engineered for high-current, high-efficiency switching in 12–48 V industrial and computing power systems.

FAQ

What is the maximum safe operating temperature for SPP80N04S2L-03?

The device supports continuous operation up to T_j = 175 °C, verified by qualification testing per JEDEC standards. Derating begins at T_C > 100 °C per the P_tot vs. T_C curve on page 4 of the datasheet; thermal design must maintain junction temperature below 175 °C under worst-case load and ambient conditions.

Can SPP80N04S2L-03 be driven directly from a 3.3 V microcontroller GPIO?

Yes-the V_GS(th) range (1.2–2.0 V) and logic-level enhancement mode ensure full turn-on at 3.3 V. However, gate drive strength must deliver ≥213 nC within required switching time; a dedicated gate driver (e.g., IRS2001) is recommended for >50 kHz operation to minimize switching losses.

Does SPP80N04S2L-03 have a qualified avalanche rating?

Yes-E_AS = 810 mJ is a production-tested, guaranteed parameter at T_j = 25 °C (ID = 80 A, V_DD = 25 V, R_GS = 25 Ω). This rating applies to single-pulse inductive energy dissipation and is validated across the manufacturing lot.

How does the body diode performance compare to discrete Schottky diodes?

Its body diode has V_SD = 0.9–1.3 V at 80 A and Q_rr = 145–180 nC-lower forward drop than 45 V Schottkys but higher Q_rr. In synchronous rectification, it outperforms Schottkys above ~20 A due to lower conduction loss, though softness is less than SiC Schottkys.

SPP80N04S2L-03 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 213 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7930 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP80N04S2L-03 FAQ

1.How can I place an order for SPP80N04S2L-03 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP80N04S2L-03 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP80N04S2L-03 reliable?

The price and inventory of SPP80N04S2L-03 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N04S2L-03 is usually 5 days.

3.What payment methods are accepted for SPP80N04S2L-03?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N04S2L-03 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP80N04S2L-03?

SPP80N04S2L-03 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP80N04S2L-03 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP80N04S2L-03?

For technical support, including SPP80N04S2L-03 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N04S2L-03 requirements.

6.How does Aetrix verify that SPP80N04S2L-03 is sourced from the original manufacturer or authorized distributors?

All SPP80N04S2L-03 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N04S2L-03 meets industry standards.

7.What is the process for return or replacement of SPP80N04S2L-03?

All SPP80N04S2L-03 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N04S2L-03, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP80N04S2L-03 part is unused and in its original packaging.

Return procedure for SPP80N04S2L-03:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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