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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP80N06S2-05

Name: SPP80N06S2-05
Brand: Infineon Technologies
SKU: SPP80N06S2-05
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP80N06S2-05

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP80N06S2-05.pdf

Description:: MOSFET N-CH 55V 80A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPP80N06S2-05 from Infineon Technologies is an N-channel enhancement-mode power MOSFET optimized for high-current switching in industrial motor drives, DC-DC converters, and battery protection circuits. It features a 55 V drain-source breakdown voltage, 4.8 mΩ maximum R_DS(on) at V_GS = 10 V and I_D = 80 A, 80 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature.

For engineers reviewing the SPP80N06S2-05 datasheet, SPP80N06S2-05 pinout, SPP80N06S2-05 application, or SPP80N06S2-05 equivalent, key selection criteria include avalanche energy rating (810 mJ), dv/dt immunity (6 kV/µs), thermal resistance (R_thJC = 0.5 K/W), and reverse diode forward voltage (0.9–1.3 V at 80 A).

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve low conduction loss while maintaining robust switching performance. Its gate threshold voltage (2.1–4.0 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers, and its 130–170 nC total gate charge supports efficient high-frequency operation up to several hundred kHz.

The integrated body diode is optimized for fast recovery (t_rr = 60–75 ns, Q_rr = 130–160 nC) and low forward voltage, enabling synchronous rectification and freewheeling in hard-switched topologies without external Schottky diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	55 V - Supports 48 V nominal bus systems with 15% margin for transients
R_DS(on) max	4.8 mΩ @ V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at 80 A
I_D cont	80 A @ T_C = 25 °C - Requires heatsinking for sustained full-load operation
E_AS	810 mJ - Withstands single-pulse inductive energy without failure
dv/dt rating	6 kV/µs - Immune to parasitic turn-on in high-noise motor drive environments
Q_g total	130–170 nC - Determines gate driver power requirement and switching speed trade-off
V_SD	0.9–1.3 V @ I_F = 80 A - Low-loss freewheeling path reduces heat in H-bridge outputs

Pinout & Package

Supplied in TO-220-3-1 package (P-TO220-3-1), with drain connected to the tab for direct heatsink mounting and low-inductance thermal path. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires ≤±20 V drive
Pin 2 (Drain)	High-side current return	Internally bonded to metal tab; electrically and thermally coupled to heatsink
Pin 3 (Source)	Reference node for gate drive	Serves as local ground reference for gate driver; critical for stable switching

Key Features

Feature	Design Value
Avalanche rated	Guarantees ruggedness under inductive load switching without external snubbers
175 °C operating temperature	Enables use in sealed enclosures or high-ambient environments without derating
Low R_DS(on) × Q_g figure of merit	Optimizes trade-off between conduction loss and switching loss in 100–500 kHz applications
Fast-recovery body diode	Reduces reverse recovery losses and EMI in half-bridge and synchronous buck configurations
dv/dt immune	Prevents false triggering during high-slew-rate voltage transitions across drain-source

Applications

Motor Drive Inverter Stage

Industrial DC-DC Converter Primary Switch

Use Scenario: High-efficiency 3-phase inverter for 48 V BLDC motors in automated guided vehicles.

IC Role / Device Role / Timing Role: Low-side switching element in six-pack topology, commutated at 10–20 kHz.

Use Value: 4.8 mΩ R_DS(on) minimizes I²R loss at 80 A peak phase current; 810 mJ E_AS absorbs flyback energy during fault conditions.

Use Scenario: 1 kW isolated forward converter converting 48 V input to 12 V output for factory automation controllers.

IC Role / Device Role / Timing Role: Primary-side power switch operating at 250 kHz with zero-voltage switching assist.

Use Value: Low Q_g (130–170 nC) enables fast turn-on/turn-off; 6 kV/µs dv/dt rating prevents spurious turn-on during transformer reset.

Battery Protection Circuit

UPS Output Stage

Use Scenario: Solid-state main disconnect in 48 V lithium-ion battery packs for telecom backup systems.

IC Role / Device Role / Timing Role: Bidirectional current-blocking switch controlled by protection IC during overcurrent or short-circuit events.

Use Value: 80 A continuous rating handles surge loads; avalanche capability ensures survival during sudden load dump or hot-plug events.

Use Scenario: Output H-bridge in online double-conversion UPS delivering clean 230 V AC from 48 V DC bus.

IC Role / Device Role / Timing Role: High-current switching device in full-bridge inverter stage, operating at 16.67 kHz (60 Hz fundamental).

Use Value: Integrated low-V_SD body diode (0.9–1.3 V) reduces conduction loss during dead-time freewheeling, improving efficiency and thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 5.5 mΩ @ 10 V; Q_g = 150 nC; T_jmax = 175 °C	Slightly higher conduction loss; similar avalanche rating (720 mJ)	Acceptable where 0.7 mΩ R_DS(on) margin is available and footprint compatibility exists
STP80NF55-08	R_DS(on) = 8.0 mΩ @ 10 V; Q_g = 140 nC; E_AS = 620 mJ	Higher on-resistance increases conduction loss by ~67%; lower avalanche energy	Only suitable for lower-current or non-avalanche-critical designs with relaxed thermal constraints

Compared with IRFB4115PBF and STP80NF55-08, the SPP80N06S2-05 delivers superior conduction efficiency and ruggedness per unit area, making it preferred for space-constrained, high-reliability 48 V industrial systems where thermal headroom and transient immunity are design-critical.

Availability

SPP80N06S2-05 is available at Aetrix Electronics and suitable for industrial motor drives, battery management systems, and uninterruptible power supplies requiring stable component supply and long-term manufacturability.

Supply support for SPP80N06S2-05 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™ power transistor product line, engineered specifically for high-efficiency, high-reliability switching in 12–60 V industrial and transportation power systems.

FAQ

What is the maximum safe operating temperature for SPP80N06S2-05?

The junction temperature must not exceed +175 °C under any operating condition. The device is rated for continuous operation from –55 °C to +175 °C, with thermal resistance R_thJC = 0.5 K/W. Derating curves on page 4 confirm 80 A current capability only at T_C ≤ 25 °C; above that, current must be reduced per the ID vs. TC graph.

Can SPP80N06S2-05 be driven directly by a 3.3 V microcontroller?

No - its gate threshold voltage range is 2.1–4.0 V, but full enhancement requires ≥10 V to achieve rated R_DS(on). At 3.3 V, R_DS(on) exceeds 20 mΩ, causing excessive conduction loss. A dedicated gate driver (e.g., IRS2007) or level-shifting circuit is required for reliable switching.

Does SPP80N06S2-05 have a built-in ESD protection diode on the gate?

Yes - the gate-source leakage current specification (I_GSS ≤ 100 nA at V_GS = 20 V) and ±20 V absolute maximum gate-source voltage rating indicate integrated gate oxide protection. However, external Zener clamping (e.g., 12 V TVS) is still recommended in high-noise environments per Infineon's application note AN2015-04.

Is the TO-220 package electrically insulated from the drain terminal?

No - in the P-TO220-3-1 package, the metal tab is internally connected to the drain. Electrical isolation from the heatsink requires a mica or ceramic insulator plus conductive thermal paste. Failure to isolate will short the drain to chassis ground in most mounting configurations.

SPP80N06S2-05 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.1mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6790 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP80N06S2-05 FAQ

1.How can I place an order for SPP80N06S2-05 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP80N06S2-05 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP80N06S2-05 reliable?

The price and inventory of SPP80N06S2-05 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N06S2-05 is usually 5 days.

3.What payment methods are accepted for SPP80N06S2-05?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N06S2-05 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP80N06S2-05?

SPP80N06S2-05 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP80N06S2-05 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP80N06S2-05?

For technical support, including SPP80N06S2-05 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N06S2-05 requirements.

6.How does Aetrix verify that SPP80N06S2-05 is sourced from the original manufacturer or authorized distributors?

All SPP80N06S2-05 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N06S2-05 meets industry standards.

7.What is the process for return or replacement of SPP80N06S2-05?

All SPP80N06S2-05 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N06S2-05, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP80N06S2-05 part is unused and in its original packaging.

Return procedure for SPP80N06S2-05:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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