Infineon Technologies SPP80N06S2-07

Overview

SPP80N06S2-07 from Infineon Technologies is an N-channel enhancement-mode power MOSFET rated for 55 V drain-source voltage, 6.6 mΩ typical R_DS(on) at V_GS = 10 V and I_D = 68 A, and 80 A continuous drain current at T_C = 25 °C. It features avalanche rating (E_AS = 530 mJ), 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature - deployed in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPP80N06S2-07 datasheet, SPP80N06S2-07 pinout, SPP80N06S2-07 application, or SPP80N06S2-07 equivalent, key selection criteria include R_DS(on) vs. temperature stability, gate charge (Q_g = 86–110 nC), safe operating area (SOA) at 25 °C, and TO-220-3 package thermal resistance (R_thJC = 0.4–0.6 K/W).

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (V_GS(th) = 2.1–4.0 V) ensures robust turn-on margin under noisy conditions, and its reverse diode supports synchronous rectification with V_SD = 0.96–1.3 V at I_F = 80 A.

The MOSFET is characterized for operation up to 175 °C with guaranteed avalanche energy (E_AS) and dv/dt ruggedness - critical for inductive load switching in automotive body control modules and industrial inverters where transient overvoltage immunity is mandatory.

Key Specifications

Pinout & Package

Package: TO-220-3 (P-TO220-3-1), through-hole, isolated tab (drain-connected). Standard lead-forming and mounting compatible with IPC-7351B footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFB4115PBF and STP80NF55-08, SPP80N06S2-07 delivers superior conduction efficiency (lower R_DS(on)), verified dv/dt immunity, and tighter V_GS(th) distribution - making it optimal for high-reliability, high-frequency 48 V power stages where thermal and transient margins are constrained.

Availability

SPP80N06S2-07 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drives, server power supplies, and telecom DC-DC converters requiring stable component supply across extended temperature and lifetime requirements.

Supply support for SPP80N06S2-07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global R&D and manufacturing infrastructure.

SPP80N06S2-07 belongs to the OptiMOS™ power transistor product line, engineered specifically for high-efficiency, high-current switching in 12–48 V systems where low R_DS(on), avalanche robustness, and thermal resilience are critical.

FAQ

Is SPP80N06S2-07 suitable for synchronous rectification?

Yes - its integrated body diode has V_SD ≤ 1.3 V at 80 A and t_rr ≤ 70 ns, enabling efficient synchronous rectification in secondary-side buck converters. Gate drive must be precisely timed to avoid shoot-through, and layout must minimize source inductance to preserve diode softness.

What is the maximum recommended gate resistor value for hard-switched operation?

For 100 kHz hard-switched operation with V_DD = 30 V and I_D = 80 A, a 3.3 Ω gate resistor is specified in the datasheet to limit peak gate current and control rise/fall times (tr = 37–56 ns, tf = 36–54 ns). Values above 5.6 Ω increase switching losses significantly without meaningful EMI benefit.

Does SPP80N06S2-07 require a heatsink in continuous 80 A operation?

Yes - at 80 A continuous and T_C = 25 °C, power dissipation reaches ~42 W (I² × R_DS(on)). With R_thJC = 0.6 K/W, junction temperature would exceed 175 °C without a heatsink. A minimum 0.5 K/W heatsink (including interface resistance) is required for sustained 80 A operation at ambient ≤ 50 °C.

Can SPP80N06S2-07 replace older OptiMOS devices like SPP80N03S2-07?

No - SPP80N03S2-07 is a 30 V device with different R_DS(on) and SOA characteristics. SPP80N06S2-07's 55 V rating and higher thermal limits make it incompatible as a drop-in replacement unless the circuit's maximum V_DS is confirmed ≤55 V and gate drive timing is re-validated for its higher Q_g and lower V_GS(th).