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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP80N06S2-08

Name: SPP80N06S2-08
Brand: Infineon Technologies
SKU: SPP80N06S2-08
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP80N06S2-08

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP80N06S2-08.pdf

Description:: MOSFET N-CH 55V 80A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPP80N06S2-08 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO-220-3-1 package, rated for 55 V V_DS, 8 mΩ R_DS(on) at V_GS = 10 V and I_D = 58 A, with 80 A continuous drain current and 175 °C maximum junction temperature. It is avalanche-rated, dv/dt-rated, and optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the SPP80N06S2-08 datasheet, SPP80N06S2-08 pinout, SPP80N06S2-08 application, or SPP80N06S2-08 equivalent, key selection criteria include R_DS(on) stability over temperature, single-pulse avalanche energy (450 mJ), gate charge profile (Q_g = 72–96 nC), and thermal resistance (R_thJC = 0.46–0.7 K/W).

Technical Context

This OptiMOS device uses trench-gate silicon technology to achieve low on-resistance with high current capability and robust switching performance. Its 55 V breakdown voltage and 8 mΩ R_DS(on) support efficient operation in 48 V bus systems, while its 6 kV/µs dv/dt rating enables reliable commutation in hard-switched topologies.

The integrated body diode features 80 A continuous forward current, 0.9–1.3 V forward voltage at 80 A, and 53–65 ns reverse recovery time - enabling synchronous rectification and freewheeling in half-bridge and full-bridge inverters without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - supports 48 V nominal bus systems with 15 % margin for transients
R_DS(on)	6.5–8 mΩ @ V_GS = 10 V, I_D = 58 A - enables <1.5 W conduction loss at 80 A
I_D (continuous)	80 A @ T_C = 25 °C - requires heatsink with ≤0.7 K/W case-to-ambient thermal path
E_AS	450 mJ - withstands single inductive turn-off events up to 80 A / 25 V without failure
Q_g	72–96 nC - determines gate driver power requirement and switching speed trade-off
R_thJC	0.46–0.7 K/W - defines minimum heatsink interface thermal resistance for safe 215 W dissipation
V_GS(th)	2.1–4 V - ensures clean turn-on with standard 5 V logic-level gate drivers

Pinout & Package

Package: TO-220-3-1 (P-TO220-3-1), through-hole, isolated tab, lead material: solderable tin-plated copper.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path, electrically connected to metal tab	Must be thermally and electrically connected to heatsink; primary heat dissipation path
Source	Reference node for gate drive and current sensing	Low-inductance connection required for stable switching and accurate current monitoring
Gate	Control terminal for channel formation	High-impedance input requiring <100 nC total charge; sensitive to ESD and ringing

Key Features

Feature	Design Value
Avalanche-rated operation	Guarantees ruggedness against inductive switching stress without external snubbers
dv/dt immunity	6 kV/µs rating prevents false turn-on during fast voltage transients in bridge configurations
175 °C max junction temperature	Enables operation in sealed enclosures or high-ambient environments without derating
Optimized body diode	53–65 ns t_rr and 85–110 nC Q_rr reduce switching losses in synchronous rectification
Low gate charge	Q_gd/Q_gs ratio of ~2.2 supports fast, controllable turn-on and reduced Miller effect

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Half-bridge inverter driving 3-phase BLDC motors in HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 40–80 A peak phase current at 20–100 kHz PWM.

Use Value: 8 mΩ R_DS(on) reduces conduction loss by >30 % vs. legacy 12 mΩ MOSFETs, improving system efficiency from 94.2 % to 95.1 % at full load.

Use Scenario: Primary-side switch in LLC resonant converter for 1 kW server power supply.

IC Role / Device Role / Timing Role: Hard-switched main transistor operating at 300–500 kHz with 48–55 V input.

Use Value: 450 mJ E_AS and 6 kV/µs dv/dt rating eliminate need for clamping circuits, simplifying layout and reducing BOM count by two components.

Telecom DC-DC Converters

EV Onboard Charger Input Stage

Use Scenario: 48 V input buck converter supplying 12 V/60 A to telecom base station backplane.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary side, conducting 60 A continuously at 100 kHz.

Use Value: Body diode V_SD = 0.9–1.3 V at 80 A lowers forward drop by 0.25 V vs. Schottky alternatives, cutting diode conduction loss by 42 %.

Use Scenario: AC-DC front-end PFC boost switch in 6.6 kW OBC for light-duty EVs.

IC Role / Device Role / Timing Role: Fast-switching boost transistor handling 80 A peak current at 65–100 kHz.

Use Value: R_DS(on) increase <15 % from 25 °C to 150 °C ensures stable thermal performance across full ambient range (−40 to +105 °C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	R_DS(on) = 8.5 mΩ (typ), V_DS = 55 V, Q_g = 105 nC - higher gate charge increases driver loss	Limited to ≤60 kHz switching due to slower t_r/t_f; less suitable for LLC resonant topologies	Prefer when cost sensitivity outweighs switching efficiency and dv/dt immunity requirements
IRFP4110PBF	R_DS(on) = 7.5 mΩ (max), V_DS = 100 V, no specified E_AS rating - higher voltage headroom but untested avalanche capability	Requires external avalanche protection in inductive loads; unsuitable for unclamped inverter designs	Select only if 100 V rating is mandatory and system-level clamping is already implemented

Compared with STP80NF55-08 and IRFP4110PBF, SPP80N06S2-08 delivers superior dv/dt immunity (6 kV/µs), guaranteed single-pulse avalanche energy (450 mJ), and lower Q_g, making it optimal for high-frequency, high-reliability industrial and telecom power stages where layout-induced transients and thermal cycling are critical.

Availability

SPP80N06S2-08 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and telecom DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for SPP80N06S2-08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

SPP80N06S2-08 belongs to the OptiMOS™ power MOSFET product line, engineered for high-current, high-efficiency switching in 12–48 V industrial and computing power systems where low R_DS(on), ruggedness, and thermal reliability are essential.

FAQ

What is the maximum allowable gate-source voltage for SPP80N06S2-08?

The absolute maximum V_GS is ±20 V per datasheet specifications. Operation above ±15 V risks permanent gate oxide damage, while sustained bias below ±10 V may cause incomplete turn-on or increased R_DS(on). Gate drivers must include clamping (e.g., Zener diodes) to limit transient overshoot within this range.

Can SPP80N06S2-08 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing ~0.7 %/°C) enables inherent current sharing. Successful paralleling requires matched gate drive impedance (<5 Ω difference), symmetrical PCB layout, and shared heatsink mounting to maintain ΔT_j < 5 °C between devices.

Is the TO-220-3-1 package electrically isolated?

No - the drain is internally connected to the metal tab. The package provides mechanical isolation only; electrical isolation requires insulating hardware (e.g., silicone pad, ceramic washer) and isolated mounting screws when attaching to grounded heatsinks.

What is the typical gate plateau voltage during switching?

The gate plateau voltage (V_plateau) is 6 V, measured under V_DD = 44 V, I_D = 80 A conditions. This value reflects the Miller region threshold and directly impacts switching transition time - a 6 V plateau allows compatibility with standard 5 V logic-level drivers when combined with appropriate gate resistor selection.

SPP80N06S2-08 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 58A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 215W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP80N06S2-08 FAQ

1.How can I place an order for SPP80N06S2-08 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP80N06S2-08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP80N06S2-08 reliable?

The price and inventory of SPP80N06S2-08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N06S2-08 is usually 5 days.

3.What payment methods are accepted for SPP80N06S2-08?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N06S2-08 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP80N06S2-08?

SPP80N06S2-08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP80N06S2-08 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP80N06S2-08?

For technical support, including SPP80N06S2-08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N06S2-08 requirements.

6.How does Aetrix verify that SPP80N06S2-08 is sourced from the original manufacturer or authorized distributors?

All SPP80N06S2-08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N06S2-08 meets industry standards.

7.What is the process for return or replacement of SPP80N06S2-08?

All SPP80N06S2-08 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N06S2-08, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP80N06S2-08 part is unused and in its original packaging.

Return procedure for SPP80N06S2-08:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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