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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP80N06S209

Name: SPP80N06S209
Brand: Infineon Technologies
SKU: SPP80N06S209
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP80N06S209

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP80N06S209.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPP80N06S2-09 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET rated for 55 V drain-source voltage, 9.1 mΩ maximum R_DS(on) at V_GS = 10 V and I_D = 50 A, and 80 A continuous drain current at T_C = 25 °C. It operates up to 175 °C junction temperature, features avalanche and dv/dt ruggedness, and is housed in a TO-220-3-1 package for high-current switching in DC-DC converters and motor drives.

For engineers reviewing the SPP80N06S2-09 datasheet, SPP80N06S2-09 pinout, SPP80N06S2-09 application, or SPP80N06S2-09 equivalent, key selection criteria include its 7.6 mΩ typical R_DS(on), 370 mJ single-pulse avalanche energy, 6 kV/µs dv/dt rating, and thermal resistance of 0.52 K/W (junction-to-case), critical for high-reliability power stage design.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-frequency synchronous rectification and half-bridge configurations. Its gate threshold voltage (2.1–4 V) ensures robust noise immunity while enabling direct drive from standard 5 V or 3.3 V logic-level controllers.

The device integrates a fast, low-Q_rr body diode (Q_rr = 76–95 nC, t_rr = 50–63 ns) with V_SD ≤ 1.3 V at 80 A, supporting efficient reverse recovery in hard-switched topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 48 V nominal bus systems and 36 V automotive applications.
R_DS(on) max	9.1 mΩ at V_GS = 10 V, I_D = 50 A - Enables <1.5 W conduction loss at 40 A, reducing heatsink requirements.
I_D cont	80 A at T_C = 25 °C - Supports high-current output stages in industrial SMPS and BLDC motor inverters.
E_AS	370 mJ - Withstands single-pulse inductive energy surges common in relay driving and solenoid control.
dv/dt rating	6 kV/µs - Ensures reliable operation under fast transient voltage stress without spurious turn-on.
Q_g	60–80 nC - Optimized for gate driver ICs with 1–2 A peak output, minimizing switching time and overlap loss.
T_j max	175 °C - Allows full-rated performance in sealed enclosures or high-ambient environments without derating.

Pinout & Package

Package: TO-220-3-1 (P-TO220-3-1), through-hole, isolated tab, leaded, with drain-connected tab for direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path and PCB ground plane.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; sensitive to ESD and layout-induced ringing.
Pin 3 (Drain)	Power output / high-side switch node	Internally bonded to metal tab; electrically connected to heatsink-requires isolation if heatsink is grounded.

Key Features

Feature	Design Value
Avalanche rated	Single-pulse E_AS = 370 mJ - Eliminates need for external snubbers in inductive load switching.
dv/dt ruggedness	6 kV/µs - Prevents false triggering during fast voltage transients in motor phase-legs or converter nodes.
Low R_DS(on) × Q_g figure-of-merit	~680 Ω·nC - Balances conduction and switching losses for 100–500 kHz operation.
Integrated body diode	t_rr = 50–63 ns, Q_rr = 76–95 nC - Reduces reverse recovery loss and EMI in synchronous buck and LLC resonant converters.
175 °C operation	Rated for full I_D at T_C = 100 °C - Enables compact thermal design in space-constrained industrial modules.

Applications

Motor Drive Inverter

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controller for HVAC blowers and conveyor systems.

IC Role / Device Role / Timing Role: Low-side switching element handling 60 A peak phase current with <100 ns turn-off delay.

Use Value: 9.1 mΩ R_DS(on) limits conduction loss to <33 W at 60 A, enabling passive cooling in IP54-rated enclosures.

Use Scenario: Primary-side synchronous rectifier in 48 V to 12 V isolated flyback converter for factory automation I/O modules.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 250 kHz with tight duty-cycle control.

Use Value: 60–80 nC total gate charge enables clean 20 ns rise/fall times using TC4427 drivers, reducing switching loss by 35% vs. older MOSFETs.

Automotive Body Control Module

UPS Output Stage

Use Scenario: Load switch for 12 V battery-fed lighting and actuator circuits in BCMs meeting ISO 7637-2 pulse 5a surge immunity.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated avalanche energy absorption.

Use Value: 370 mJ E_AS withstands 100 V/50 ms load-dump transients without failure, eliminating discrete TVS requirements.

Use Scenario: Output H-bridge in online UPS delivering 1 kVA sinusoidal AC from 48 V DC bus.

IC Role / Device Role / Timing Role: Hard-switched power stage operating at 10–20 kHz with bidirectional current capability.

Use Value: 80 A continuous rating and 320 A pulsed current support 1.5× overload capacity for generator start-up surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4110PBF	R_DS(on) = 10.5 mΩ, Q_g = 110 nC, TO-220AB package	Higher gate charge increases driver loss; lower avalanche rating (E_AS = 220 mJ)	Prefer when cost sensitivity outweighs switching efficiency in <100 kHz designs.
STP80NF55-08	R_DS(on) = 8.0 mΩ, Q_g = 125 nC, same TO-220 package	Lower R_DS(on) but higher Q_g degrades high-frequency efficiency; no specified dv/dt rating	Choose only if conduction loss dominates and gate drive strength exceeds 2 A peak.

Compared with IRFB4110PBF and STP80NF55-08, SPP80N06S2-09 delivers superior dv/dt immunity and balanced R_DS(on)/Q_g for 200–500 kHz operation, making it optimal for compact, high-reliability industrial power stages where transient robustness is non-negotiable.

Availability

SPP80N06S2-09 is available at Aetrix Electronics and suitable for industrial motor drives, 48 V DC-DC converters, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for SPP80N06S2-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

SPP80N06S2-09 belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered for high-current, high-efficiency switching in space- and thermally-constrained industrial and automotive power systems.

FAQ

Is SPP80N06S2-09 suitable for surface-mount assembly?

No. SPP80N06S2-09 uses a TO-220-3-1 through-hole package with an isolated metal tab. It requires hole mounting and mechanical screw-down to a heatsink. For surface-mount equivalents, consider Infineon's SPB80N06S2-09 in TO-263-3 (D²PAK) package, which shares identical electrical specs but differs in thermal interface and footprint.

What is the maximum safe gate-source voltage?

The absolute maximum V_GS is ±20 V per datasheet. Operation above ±15 V risks permanent gate oxide damage. Recommended drive is 10 V for full R_DS(on) specification; 12 V provides margin against gate threshold drift at high temperature but must remain below 15 V to ensure long-term reliability.

Does this MOSFET require a gate resistor for stability?

Yes. A series gate resistor (typically 4.7–10 Ω) is required to dampen parasitic oscillation caused by PCB trace inductance interacting with gate capacitance. The datasheet specifies switching times (e.g., t_r = 29–44 ns) measured with R_G = 4.7 Ω; omitting it risks shoot-through in bridge configurations and EMI compliance failure.

Can SPP80N06S2-09 replace older OptiMOS 1st-gen parts like SPP80N06S-07?

Yes, with verification. SPP80N06S2-09 offers lower R_DS(on) (9.1 mΩ vs. 11 mΩ), improved dv/dt rating (6 kV/µs vs. 4.5 kV/µs), and higher E_AS (370 mJ vs. 290 mJ). Pinout and package are identical, but gate charge profile differs slightly-confirm driver capability supports the 60–80 nC requirement before drop-in replacement.

SPP80N06S209 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.1mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 125µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3140 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP80N06S209 FAQ

1.How can I place an order for SPP80N06S209 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP80N06S209 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP80N06S209 reliable?

The price and inventory of SPP80N06S209 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N06S209 is usually 5 days.

3.What payment methods are accepted for SPP80N06S209?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N06S209 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP80N06S209?

SPP80N06S209 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP80N06S209 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP80N06S209?

For technical support, including SPP80N06S209 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N06S209 requirements.

6.How does Aetrix verify that SPP80N06S209 is sourced from the original manufacturer or authorized distributors?

All SPP80N06S209 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N06S209 meets industry standards.

7.What is the process for return or replacement of SPP80N06S209?

All SPP80N06S209 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N06S209, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP80N06S209 part is unused and in its original packaging.

Return procedure for SPP80N06S209:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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