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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP80N06S2-09

Name: SPP80N06S2-09
Brand: Infineon Technologies
SKU: SPP80N06S2-09
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP80N06S2-09

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP80N06S2-09.pdf

Description:: MOSFET N-CH 55V 80A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPP80N06S2-09 from Infineon Technologies is an N-channel enhancement-mode power MOSFET rated for 55 V V_DS, 9.1 mΩ R_DS(on) at V_GS = 10 V, and 80 A continuous drain current at T_C = 25 °C. It features avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature - deployed in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPP80N06S2-09 datasheet, SPP80N06S2-09 pinout, SPP80N06S2-09 application, or SPP80N06S2-09 equivalent, key selection criteria include R_DS(on) vs. temperature stability, unclamped inductive switching (UIS) robustness, gate charge profile for PWM efficiency, and TO-220-3 thermal resistance (R_thJC = 0.52–0.8 K/W).

Technical Context

This OptiMOS™ device uses trench-gate silicon technology optimized for low conduction loss and fast switching in hard-switched topologies. Its 7.6–9.1 mΩ R_DS(on) range reflects process variation under 50 A/10 V test conditions, while its 370 mJ single-pulse avalanche energy (E_AS) supports reliable operation under transient overloads.

The MOSFET integrates a monolithic body diode with 0.9–1.3 V forward voltage (V_SD) at 80 A and 50–63 ns reverse recovery time (t_rr). Gate charge parameters - Q_g = 60–80 nC, Q_gd = 24–37 nC - indicate moderate drive strength requirements for 100 kHz–500 kHz switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before avalanche onset; suitable for 48 V bus systems with margin.
R_DS(on)	7.6–9.1 mΩ @ V_GS = 10 V, I_D = 50 A - Directly determines conduction loss (P_cond ≈ I² × R) in high-current paths.
I_D (cont)	80 A @ T_C = 25 °C - Thermal limit defined by package heat transfer; derates to ~70 A at T_C = 100 °C.
E_AS	370 mJ - Energy absorbed during single unclamped inductive switching event; enables robustness without external snubbers.
Q_g	60–80 nC - Total gate charge required to fully turn on; sets minimum driver current and switching loss budget.
t_r/t_f	29–44 ns / 28–42 ns - Rise/fall times define minimum dead-time requirements and EMI generation in bridge circuits.
V_GS(th)	2.1–4.0 V - Threshold voltage range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers.

Pinout & Package

Supplied in P-TO220-3-1 package (standard through-hole TO-220 with isolated tab), featuring three terminals: Drain (pin 1, tab), Source (pin 2), and Gate (pin 3). Thermal path optimized via copper tab mounting to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically connected to metal tab; must be insulated from chassis unless referenced to system ground.
Source	Reference node for gate drive and current sensing	Low-inductance connection critical for stable switching and accurate shunt-based current monitoring.
Gate	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD and requires RC snubber for ringing suppression.

Key Features

Feature	Design Value
Avalanche-rated operation	Guaranteed 370 mJ single-pulse energy handling without failure - eliminates need for external clamping in inductive loads.
175 °C maximum junction temperature	Enables sustained operation in sealed enclosures or high-ambient environments (e.g., automotive engine bays, industrial motor drives).
dv/dt ruggedness	Rated for 6 kV/µs - prevents false turn-on during fast voltage transients in half-bridge configurations.
Low gate charge asymmetry	Q_gd/Q_g ratio ~40% - improves controllability of Miller plateau region and reduces risk of shoot-through.
Integrated body diode	V_SD = 0.9–1.3 V @ 80 A - Enables synchronous rectification in buck converters without external diode.

Applications

Motor Drive Half-Bridge

48 V DC-DC Converter

Use Scenario: High-current BLDC motor phase leg in e-bike controller with 48 V nominal battery and peak 120 A load.

IC Role / Device Role / Timing Role: Power switch in high-side position; commutated at 20 kHz with 100 ns dead time.

Use Value: Low R_DS(on) minimizes I²R losses at 80 A RMS; avalanche rating absorbs back-EMF spikes during abrupt current interruption.

Use Scenario: Primary-side switch in isolated 48 V → 12 V 500 W LLC resonant converter for telecom power supply.

IC Role / Device Role / Timing Role: Hard-switched primary FET operating at 300 kHz with zero-voltage switching assist.

Use Value: 60–80 nC Q_g balances drive loss and switching speed; 55 V rating provides 15% margin above 48 V bus max.

Industrial UPS Inverter

EV Onboard Charger Stage

Use Scenario: Output stage in 3 kW offline UPS delivering clean 230 V AC from 350 V DC bus.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge inverter; gated with isolated gate driver and active Miller clamp.

Use Value: 6 kV/µs dv/dt rating prevents spurious turn-on during rapid V_DS transitions across transformer leakage inductance.

Use Scenario: PFC boost switch in 6.6 kW OBC handling 240 V AC input and 400 V DC link.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost FET switching at 65 kHz with 10 V gate drive.

Use Value: 175 °C T_jmax allows compact heatsinking in thermally constrained EV module; R_DS(on) tempco supports stable loss prediction over full operating range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 10.5 mΩ @ 10 V; Q_g = 120 nC; TO-220 package	Higher gate charge increases driver loss; lower avalanche rating (280 mJ)	Acceptable where lower cost outweighs reduced efficiency and ruggedness.
STP80NF55-08	R_DS(on) = 8.0 mΩ @ 10 V; E_AS = 320 mJ; same TO-220-3 package	Slightly lower R_DS(on) but reduced avalanche margin; higher C_iss (2900 pF)	Preferred when conduction loss dominates and layout minimizes dv/dt stress.

Compared with IRFB4115PBF and STP80NF55-08, SPP80N06S2-09 delivers superior UIS robustness and tighter R_DS(on) tolerance, making it optimal for mission-critical industrial inverters where reliability under overload is non-negotiable.

Availability

SPP80N06S2-09 is available at Aetrix Electronics and suitable for motor drive half-bridges, 48 V DC-DC converters, and industrial UPS inverters requiring stable component supply and long-term lifecycle support.

Supply support for SPP80N06S2-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

The OptiMOS™ product line targets high-efficiency power conversion in industrial, automotive, and computing applications - engineered for low R_DS(on), fast switching, and rugged operation in harsh thermal and electrical environments.

FAQ

What is the maximum safe operating temperature for SPP80N06S2-09?

The device supports continuous operation up to 175 °C junction temperature, verified per JEDEC JESD22-A108. Derating curves on Page 4 confirm 80 A I_D is valid only at T_C ≤ 25 °C; at T_C = 100 °C, max I_D drops to ~70 A due to thermal resistance limits (R_thJC = 0.52–0.8 K/W).

Does SPP80N06S2-09 require a gate resistor, and what value is recommended?

Yes - a series gate resistor (typically 4.7–10 Ω) is required to dampen ringing and control dV/dt. The datasheet specifies t_d(on), t_r, t_d(off), and t_f using R_G = 4.7 Ω; increasing R_G slows switching but reduces EMI and shoot-through risk in bridge configurations.

Can SPP80N06S2-09 be used in synchronous rectification mode?

Yes - its integrated body diode has V_SD = 0.9–1.3 V at 80 A and t_rr = 50–63 ns, enabling use as a freewheeling element in buck or flyback converters. However, external MOSFETs are preferred for true synchronous rectification due to lower V_SD and controllable turn-off.

Is the TO-220 tab electrically isolated in SPP80N06S2-09?

No - the drain is internally connected to the metal tab. Electrical isolation from the heatsink or PCB mount surface must be achieved using insulating pads or shoulder washers. This configuration is standard for P-TO220-3-1 packages and confirmed in the "Package" section on Page 1.

SPP80N06S2-09 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.1mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 125µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3140 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP80N06S2-09 FAQ

1.How can I place an order for SPP80N06S2-09 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP80N06S2-09 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP80N06S2-09 reliable?

The price and inventory of SPP80N06S2-09 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N06S2-09 is usually 5 days.

3.What payment methods are accepted for SPP80N06S2-09?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N06S2-09 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP80N06S2-09?

SPP80N06S2-09 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP80N06S2-09 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP80N06S2-09?

For technical support, including SPP80N06S2-09 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N06S2-09 requirements.

6.How does Aetrix verify that SPP80N06S2-09 is sourced from the original manufacturer or authorized distributors?

All SPP80N06S2-09 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N06S2-09 meets industry standards.

7.What is the process for return or replacement of SPP80N06S2-09?

All SPP80N06S2-09 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N06S2-09, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP80N06S2-09 part is unused and in its original packaging.

Return procedure for SPP80N06S2-09:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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