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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP80N06S2-H5

Name: SPP80N06S2-H5
Brand: Infineon Technologies
SKU: SPP80N06S2-H5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP80N06S2-H5

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP80N06S2-H5.pdf

Description:: MOSFET N-CH 55V 80A TO220-3

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Product details

Overview

SPP80N06S2-H5 from Infineon Technologies is an N-channel enhancement-mode power MOSFET designed for high-current switching in DC-DC converters, motor drives, and industrial power supplies. It features 55 V V_DS, 4.6 mΩ typical R_DS(on) at V_GS = 10 V, 80 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature - enabling robust operation in thermally demanding 48 V bus systems.

For engineers reviewing the SPP80N06S2-H5 datasheet, SPP80N06S2-H5 pinout, SPP80N06S2-H5 application, or SPP80N06S2-H5 equivalent, key selection criteria include avalanche energy rating (700 mJ), dv/dt immunity (6 kV/µs), gate charge profile (Q_g = 116–155 nC), and thermal resistance (R_thJC = 0.34–0.5 K/W) for heatsink-limited designs.

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its 5.5 mΩ max R_DS(on) and 4400–5500 pF C_iss support high-efficiency synchronous rectification in 48 V input buck converters operating up to 500 kHz.

The integrated avalanche-rated body diode (V_SD = 0.9–1.3 V, t_rr = 60–75 ns, Q_rr = 130–163 nC) enables reliable freewheeling in hard-switched topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 48 V nominal bus systems with 20 % transient margin.
R_DS(on) max	5.5 mΩ at V_GS = 10 V, I_D = 80 A - Enables <1.5 W conduction loss at full load in high-current switch nodes.
I_D cont	80 A at T_C = 25 °C - Supports high-power motor phase legs and primary-side switches in telecom PSUs.
E_AS	700 mJ single-pulse - Withstands repetitive inductive turn-off stress without derating in solenoid or relay drivers.
dv/dt rating	6 kV/µs - Ensures immunity to parasitic ringing in high-di/dt gate-drive layouts.
Q_g	116–155 nC - Determines gate driver peak current requirement (~3 A for 50 ns rise time with 2.4 Ω R_G).
R_thJC	0.34–0.5 K/W - Defines minimum heatsink thermal resistance needed to maintain T_j ≤ 175 °C at full power.

Pinout & Package

Supplied in TO-220-3-1 package (P-TO220-3-1), this discrete MOSFET has three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain and must be isolated from heatsink unless circuit topology permits common-drain configuration.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, tied to high-side switching node	Electrically connected to package tab; requires insulating washer when mounted to grounded heatsink.
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance connection point for shunt resistor or gate driver return path.
Gate (Pin 2)	Control electrode for channel formation	High-impedance input requiring low-ESR gate resistor (2.4 Ω typical) to damp oscillation.

Key Features

Feature	Design Value
Avalanche rated	700 mJ single-pulse energy withstand - eliminates need for external snubbers in inductive load switching.
175 °C operation	Extended junction temperature range - supports compact enclosure designs without forced air cooling.
dv/dt rated	6 kV/µs immunity - prevents false turn-on during high-slew-rate transients in half-bridge configurations.
Low Q_gd/Q_g ratio	48–72 nC / 116–155 nC ≈ 45 % - improves Miller immunity and reduces switching loss during hard commutation.
Optimized body diode	t_rr = 60–75 ns, Q_rr = 130–163 nC - minimizes reverse recovery loss in synchronous rectifier and LLC resonant applications.

Applications

Motor Drive Inverter

48 V DC-DC Converter

Use Scenario: Three-phase BLDC motor control in industrial automation systems with 48 V supply rail.

IC Role / Device Role / Timing Role: High-side and low-side switching element in each leg of the inverter bridge.

Use Value: 5.5 mΩ R_DS(on) and 80 A rating enable >98 % efficiency at 5 kW output with minimal heatsinking.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V-to-12 V buck converter for server power distribution.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode in forward or active-clamp flyback topology.

Use Value: Low V_SD (0.9–1.3 V) and fast t_rr reduce conduction and recovery losses by >40 % vs. discrete diode solution.

Industrial Power Supply

Solenoid & Relay Driver

Use Scenario: Main switching transistor in 3 kW telecom rectifier with PFC front-end and LLC resonant stage.

IC Role / Device Role / Timing Role: High-frequency switching element in LLC half-bridge primary side.

Use Value: 4400–5500 pF C_iss and 116–155 nC Q_g allow stable 300–500 kHz operation with standard gate drivers.

Use Scenario: High-current switching element driving 24–48 V solenoids in factory automation valves and pneumatic actuators.

IC Role / Device Role / Timing Role: Single-ended switch controlling inductive load with integrated freewheeling path.

Use Value: 700 mJ E_AS rating absorbs stored inductive energy without external clamping, simplifying PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	60 V V_DS, 5.5 mΩ R_DS(on), higher Q_g (170 nC), TO-220 package	Higher gate drive energy required; less suitable for high-frequency (>300 kHz) switching	Prefer where higher V_DS margin is critical and switching frequency is ≤ 150 kHz.
STP80NF55-08	55 V V_DS, 8 mΩ R_DS(on), lower E_AS (420 mJ), same TO-220 package	Reduced avalanche ruggedness and higher conduction loss limit use in high-energy inductive loads	Acceptable only in non-avalanche-critical applications with conservative thermal design.

Compared with IRFB4115PBF and STP80NF55-08, SPP80N06S2-H5 delivers superior combination of low R_DS(on), high E_AS, and optimized Q_g/Q_gd - making it optimal for high-reliability 48 V industrial switching where both efficiency and ruggedness are mandatory.

Availability

SPP80N06S2-H5 is available at Aetrix Electronics and suitable for motor drive inverters, 48 V DC-DC converters, and industrial power supplies requiring stable component supply across multi-year production cycles.

Supply support for SPP80N06S2-H5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™ power transistor product line, engineered specifically for high-efficiency, high-current switching in industrial, telecom, and automotive power conversion systems.

FAQ

What is the maximum safe operating temperature for SPP80N06S2-H5?

The device supports continuous operation up to 175 °C junction temperature, verified per JEDEC JESD22-A108. Derated current limits apply above 25 °C case temperature - e.g., 60 A at T_C = 100 °C per Fig. 2 in the datasheet. Thermal design must ensure R_thJC + R_thCS + R_thSA ≤ 1.25 K/W for full 80 A rating at ambient.

Does SPP80N06S2-H5 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and suppress oscillation. A 2.4 Ω resistor is specified in the datasheet for switching characterization (Fig. 3), yielding ~23 ns turn-on delay and ~23 ns rise time. For lower EMI, increase to 4.7–10 Ω; for faster switching with adequate driver capability, reduce to 1.5 Ω.

Can SPP80N06S2-H5 replace a TO-263 version like SPB80N06S2-H5 in the same PCB layout?

No - SPP80N06S2-H5 uses TO-220-3-1, while SPB80N06S2-H5 uses TO-263-3-2 (D²PAK). Footprints, thermal pad geometry, and mounting hole positions differ. Electrical specs are identical, but mechanical interchange requires board redesign and requalification of thermal performance due to different R_thJC and PCB copper area requirements.

Is the body diode suitable for synchronous rectification without external compensation?

Yes - the integrated body diode is characterized for reverse recovery (t_rr = 60–75 ns, Q_rr = 130–163 nC) and forward voltage (V_SD = 0.9–1.3 V at 80 A). It performs reliably in synchronous rectifier roles in forward, flyback, and LLC topologies without external Schottky diodes, provided gate timing avoids shoot-through.

SPP80N06S2-H5 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 230µA

Gate Charge (Qg) (Max) @ Vgs:: 155 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP80N06S2-H5 FAQ

1.How can I place an order for SPP80N06S2-H5 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP80N06S2-H5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP80N06S2-H5 reliable?

The price and inventory of SPP80N06S2-H5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N06S2-H5 is usually 5 days.

3.What payment methods are accepted for SPP80N06S2-H5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N06S2-H5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP80N06S2-H5?

SPP80N06S2-H5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP80N06S2-H5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP80N06S2-H5?

For technical support, including SPP80N06S2-H5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N06S2-H5 requirements.

6.How does Aetrix verify that SPP80N06S2-H5 is sourced from the original manufacturer or authorized distributors?

All SPP80N06S2-H5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N06S2-H5 meets industry standards.

7.What is the process for return or replacement of SPP80N06S2-H5?

All SPP80N06S2-H5 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N06S2-H5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP80N06S2-H5 part is unused and in its original packaging.

Return procedure for SPP80N06S2-H5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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