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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP80N06S2L-05

Name: SPP80N06S2L-05
Brand: Infineon Technologies
SKU: SPP80N06S2L-05
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP80N06S2L-05

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP80N06S2L-05.pdf

Description:: MOSFET N-CH 55V 80A TO220-3

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Product details

Overview

SPP80N06S2L-05 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO-220-3 package, rated for 55 V V_DS, 4.5 mΩ R_DS(on) at V_GS = 4.5 V and I_D = 80 A, avalanche-rated, and dv/dt-rated for robust switching in high-current DC-DC converters and motor drives.

For engineers reviewing the SPP80N06S2L-05 datasheet, SPP80N06S2L-05 pinout, SPP80N06S2L-05 application, or SPP80N06S2L-05 equivalent, key selection criteria include its 80 A continuous drain current capability, 300 W power dissipation at T_C = 25 °C, 175 °C maximum junction temperature, and low gate charge (Q_g = 170–230 nC) for efficient gate driving in high-frequency SMPS designs.

Technical Context

This MOSFET employs Infineon's OptiMOS™ technology optimized for low conduction and switching losses in 12 V and 24 V systems. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from microcontrollers and PWM controllers without level-shifting circuitry.

The device features a robust body diode with t_rr = 65–80 ns and Q_rr = 125–160 nC, supporting synchronous rectification and freewheeling in buck converters and H-bridge motor control. Its 6 kV/µs dv/dt rating ensures immunity to parasitic turn-on in noisy high-speed switching environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 48 V nominal bus systems and 12/24 V automotive applications.
R_DS(on) @ V_GS = 4.5 V	4.5 mΩ max - Enables <1.5 W conduction loss at 80 A, critical for thermally constrained high-current PCB layouts.
I_D (continuous)	80 A @ T_C = 25 °C - Supports high-power loads such as BLDC motor phases and industrial solenoid drivers.
Q_g	170–230 nC - Determines gate driver current requirement (~1.7–2.3 A peak for 100 ns rise time), guiding driver IC selection.
E_AS	800 mJ - Specifies single-pulse avalanche energy handling, enabling reliable operation under inductive load switching stress.
T_j max	+175 °C - Allows sustained operation in under-hood automotive or enclosed industrial enclosures without derating.
R_thJC	0.3–0.5 K/W - Defines thermal path efficiency from die to case; enables accurate heatsink sizing using measured case temperature.

Pinout & Package

Package: TO-220-3 (P-TO220-3-1), through-hole, isolated tab (drain-connected), standard leaded outline per JEDEC TO-220AB.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node; carries full load current back to source.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate; requires low-inductance routing and RC snubber for EMI suppression in fast-switching apps.
Pin 3 (Drain)	Power output / high-side connection	Internally connected to metal tab; must be electrically isolated from heatsink unless system design permits common-drain configuration.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables direct interface with 3.3 V/5 V MCUs and PWM controllers without gate driver boost stages.
Avalanche-rated	800 mJ single-pulse E_AS supports unclamped inductive switching in relay drivers and motor phase control without external clamping.
dv/dt ruggedness	6 kV/µs rating prevents false turn-on during high dV/dt transients in half-bridge configurations with fast switching edges.
Low R_DS(on) at 4.5 V	4.5 mΩ max at logic-level gate drive reduces conduction loss by >30% vs. standard MOSFETs requiring 10 V gate drive in 12 V systems.

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–500 kHz with precise dead-time control.

Use Value: Low R_DS(on) and fast switching (t_r/t_f ≤ 140 ns) minimize conduction and switching losses, achieving >95% efficiency at 60 A output.

Use Scenario: Half-bridge leg in 3-phase BLDC motor controller for HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: Low-side power switch handling bidirectional current up to 80 A peak during commutation.

Use Value: Avalanche rating and robust body diode (V_SD = 0.9–1.3 V) ensure safe freewheeling and fault tolerance during phase reversal and overcurrent events.

Server PSU Primary Switches

Telecom Power Modules

Use Scenario: Primary-side switch in 48 V input, 12 V output LLC resonant converter for AI server power supplies.

IC Role / Device Role / Timing Role: High-efficiency hard-switched or ZVS-capable main switch with gate plateau voltage of 3.3 V for stable Miller region control.

Use Value: Low Q_gd/Q_gs ratio (≈3.2) improves ZVS margin and reduces switching loss sensitivity to timing skew in multi-phase designs.

Use Scenario: Output synchronous rectifier in 48 V input telecom rectifier modules delivering up to 100 A at 54 V.

IC Role / Device Role / Timing Role: Secondary-side MOSFET replacing Schottky diodes to reduce forward drop and improve thermal performance.

Use Value: 175 °C T_j max and 0.3 K/W R_thJC allow compact heatsinking in space-constrained 1U chassis with ambient up to 70 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF8720PbF	R_DS(on) = 5.2 mΩ @ 4.5 V; lower Q_g (110 nC); no avalanche rating specified.	Not qualified for repetitive avalanche stress; unsuitable for inductive switching without external protection.	Prefer where gate drive strength is limited and avalanche stress is absent.
STP80NF55-08	R_DS(on) = 8.0 mΩ @ 4.5 V; higher V_GS(th) (2.0–4.0 V); 55 V rating same.	Higher gate threshold increases risk of partial turn-on in noisy 3.3 V systems; reduced efficiency at high current.	Acceptable only if gate drive voltage ≥4.5 V and thermal budget allows higher conduction loss.

Compared with IRF8720PbF and STP80NF55-08, SPP80N06S2L-05 delivers superior conduction efficiency at logic-level drive, guaranteed avalanche ruggedness for inductive loads, and tighter V_GS(th) distribution-making it optimal for automotive and industrial applications demanding reliability under transient stress.

Availability

SPP80N06S2L-05 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and telecom power modules requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for SPP80N06S2L-05 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered specifically for high-current, low-voltage switching applications in automotive, industrial, and computing power supplies where logic-level drive and avalanche robustness are essential.

FAQ

Is SPP80N06S2L-05 suitable for surface-mount assembly?

No. SPP80N06S2L-05 uses the P-TO220-3-1 through-hole package with an isolated metal tab. For SMD variants, Infineon offers SPB80N06S2L-05 (TO-263-2) and SPI80N06S2L-05 (TO-262-1), both sharing identical electrical specs but differing in thermal and mechanical mounting requirements.

What is the maximum safe operating frequency for this MOSFET?

Maximum practical switching frequency depends on gate drive strength and layout. With a typical 1.3 Ω gate resistor and 12 V drive, turn-on/off times are 25–38 ns and 67–100 ns respectively. For hard-switched topologies, reliable operation is confirmed up to 500 kHz; above that, ZVS or soft-switching techniques are recommended to manage switching loss and thermal rise.

Does the device require a heatsink in continuous 80 A operation?

Yes. At 80 A and R_DS(on) = 4.5 mΩ, conduction loss is ~28.8 W. With R_thJC = 0.5 K/W and maximum T_j = 175 °C, even at T_C = 85 °C, junction temperature would exceed 200 °C without heatsinking. A heatsink maintaining T_C ≤ 60 °C is required for continuous 80 A operation.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 0.9–1.3 V at 80 A and t_rr = 65–80 ns. While higher forward voltage than a 45 V Schottky (typically 0.45–0.55 V), its monolithic integration eliminates layout parasitics and enables precise timing control in synchronous rectification. It is not intended to replace Schottky diodes in ultra-low-loss applications but provides robust, cost-effective freewheeling where moderate V_F is acceptable.

SPP80N06S2L-05 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP80N06S2L-05 FAQ

1.How can I place an order for SPP80N06S2L-05 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP80N06S2L-05 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP80N06S2L-05 reliable?

The price and inventory of SPP80N06S2L-05 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N06S2L-05 is usually 5 days.

3.What payment methods are accepted for SPP80N06S2L-05?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N06S2L-05 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP80N06S2L-05?

SPP80N06S2L-05 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP80N06S2L-05 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP80N06S2L-05?

For technical support, including SPP80N06S2L-05 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N06S2L-05 requirements.

6.How does Aetrix verify that SPP80N06S2L-05 is sourced from the original manufacturer or authorized distributors?

All SPP80N06S2L-05 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N06S2L-05 meets industry standards.

7.What is the process for return or replacement of SPP80N06S2L-05?

All SPP80N06S2L-05 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N06S2L-05, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP80N06S2L-05 part is unused and in its original packaging.

Return procedure for SPP80N06S2L-05:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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