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Infineon Technologies SPP80N06S2L-07

Part No.:
SPP80N06S2L-07
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSPP80N06S2L-07.pdf
Description:
MOSFET N-CH 55V 80A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,066

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Product details

Overview

SPP80N06S2L-07 from Infineon Technologies is an N-channel logic-level enhancement-mode power MOSFET rated for 55 V VDS, 80 A continuous drain current at TC = 25 °C, and 7 mΩ RDS(on) at VGS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature-designed for high-efficiency DC-DC converters in server power supplies.

For engineers reviewing the SPP80N06S2L-07 datasheet, SPP80N06S2L-07 pinout, SPP80N06S2L-07 application, or SPP80N06S2L-07 equivalent, key selection criteria include RDS(on) at 4.5 V gate drive, unclamped inductive switching (UIS) robustness, thermal resistance (RthJC = 0.46 K/W typ), and TO-220-3 package compatibility with standard heatsink mounting.

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (1.2–2.0 V) enables direct interfacing with 3.3 V and 5 V logic controllers without level-shifting circuitry.

The MOSFET supports hard-switched topologies with validated 450 mJ single-pulse avalanche energy (EAS) and 6 kV/µs dv/dt immunity-critical for motor drive half-bridges and industrial SMPS where voltage transients exceed 40 V.

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - Maximum blocking voltage before avalanche onset; suitable for 48 V bus systems with 20 % margin.
RDS(on) @ VGS = 10 V5.6–7 mΩ - Enables <1.5 W conduction loss at 60 A, reducing heatsink requirements in high-current POL converters.
RDS(on) @ VGS = 4.5 V7.1–10 mΩ - Ensures reliable turn-on with standard microcontroller GPIOs, eliminating need for gate drivers in low-speed applications.
ID (continuous)80 A @ TC = 25 °C - Supports high-current synchronous rectification in 1 kW server VRMs when mounted on copper-clad PCBs.
EAS450 mJ - Withstands repetitive inductive kickback in BLDC motor phase-legs without derating or snubbers.
dv/dt rating6 kV/µs - Prevents false turn-on during fast voltage transitions in half-bridge configurations with high di/dt loads.
Tj max175 °C - Allows operation in sealed enclosures or high-ambient environments (e.g., telecom rectifiers) without thermal throttling.

Pinout & Package

Package: TO-220-3 (P-TO220-3-1), through-hole, isolated tab (drain-connected). Thermal pad designed for mechanical mounting to heatsinks via M3 screw.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path output terminalElectrically connected to metal tab; requires insulating washer if heatsink is grounded; dominant thermal path (RthJC = 0.46 K/W).
SourceReference node for gate control and current returnLow-inductance connection point for Kelvin source sensing in precision current monitoring circuits.
GateControl electrode for channel formationHigh-impedance input requiring <100 nA leakage; sensitive to ESD-must be protected with series resistor and TVS during layout.

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS ≥ 4.5 V-enables direct drive from ARM Cortex-M or FPGA I/O pins without external level shifters.
Avalanche-ratedGuaranteed 450 mJ single-pulse energy handling-eliminates need for external clamping diodes in flyback and forward converter primary switches.
175 °C rated junctionPermits full 80 A current derating only above 130 °C ambient-extends usable lifetime in high-temp industrial PLC power modules.
Low Ciss/Coss ratioCiss = 3160–4210 pF, Coss = 740–990 pF-reduces Miller effect and improves controllability during hard switching at >100 kHz.

Applications

Server VRM Phase LegsIndustrial Motor Drive Half-Bridge

Use Scenario: High-current synchronous buck converter supplying CPU core voltage in 2U rack servers.

IC Role / Device Role / Timing Role: High-side and low-side power switch in interleaved 2-phase topology operating at 300–500 kHz.

Use Value: 7 mΩ RDS(on) reduces conduction loss by 35 % vs. legacy 12 mΩ MOSFETs, enabling 95.2 % peak efficiency at 12 V input / 1.2 V output.

Use Scenario: 3 kW brushless DC motor controller for CNC spindle drives.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, commutated at 16 kHz with sinusoidal PWM.

Use Value: 6 kV/µs dv/dt rating prevents spurious turn-on during rapid VDS transitions caused by stray inductance in 10 m cable runs.

Telecom Rectifier ModulesEV Onboard Charger (OBC) PFC Stage

Use Scenario: 3 kW front-end AC-DC converter in -48 V telecom power system with forced-air cooling.

IC Role / Device Role / Timing Role: Active clamp switch in active-clamp forward topology, switching at 200 kHz.

Use Value: 175 °C Tj max allows sustained 80 A operation at 70 °C ambient-reducing thermal margin overhead by 25 K vs. 150 °C-rated alternatives.

Use Scenario: Boost switch in 6.6 kW two-stage OBC with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Main switching element in continuous conduction mode (CCM) PFC stage, gated at 65 kHz.

Use Value: 450 mJ EAS withstands line surge events per IEC 61000-4-5 Level 4 without failure-replacing discrete snubber networks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP80NF55-08RDS(on) = 8.5 mΩ @ 10 V; lower EAS (320 mJ); TO-220FP package (shorter leads)Limited to ≤ 65 A continuous due to higher RDS(on) and reduced avalanche marginPreferable where space-constrained layouts require shorter leadform and lower cost is prioritized over 175 °C rating.
IRFB4115PBFRDS(on) = 5.5 mΩ @ 10 V; no specified dv/dt rating; 150 °C Tj maxRequires external dv/dt suppression in high-di/dt motor drives; derates to 62 A at 100 °C ambientPreferred for ultra-low-loss 48 V battery systems where thermal headroom exceeds 75 K and transient immunity is managed externally.

Compared with STP80NF55-08 and IRFB4115PBF, the SPP80N06S2L-07 uniquely combines 175 °C operation, 6 kV/µs dv/dt immunity, and 450 mJ avalanche energy-making it the only option qualified for unclamped inductive switching in sealed industrial enclosures without auxiliary protection.

Availability

SPP80N06S2L-07 is available at Aetrix Electronics and suitable for server VRM phase legs, industrial motor drive half-bridges, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for SPP80N06S2L-07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™ power transistor product line, engineered specifically for high-efficiency, high-reliability power conversion in datacenter, industrial automation, and renewable energy systems.

FAQ

Is SPP80N06S2L-07 suitable for 48 V battery disconnect applications?

Yes. Its 55 V VDS rating provides 15 % margin above nominal 48 V battery systems, and its 80 A continuous current supports Class D contactor replacement in EV auxiliary power distribution units. The integrated body diode supports reverse-current freewheeling during load dump events.

What is the recommended gate resistor value for 300 kHz switching?

A 4.7 Ω series gate resistor is recommended to balance switching speed and EMI. At 300 kHz, this yields ~25 ns rise/fall times (per datasheet tr/tf = 35–52 ns), limiting dV/dt-induced noise while keeping total switching loss below 1.8 W at 80 A.

Does the TO-220-3 package require thermal compound between tab and heatsink?

Yes. A thermally conductive dielectric grease (e.g., Dow Corning TC-5022) or silicone-based thermal pad must be applied between the isolated drain tab and heatsink surface to maintain RthJC ≤ 0.7 K/W. Mechanical pressure of 25–35 N is required for optimal interfacial contact.

Can SPP80N06S2L-07 replace SPB80N06S2L-07 in existing designs?

Yes, with mechanical adaptation. Both share identical electrical specs and thermal characteristics, but SPP80N06S2L-07 uses TO-220-3 while SPB80N06S2L-07 uses TO-263-3 (D²PAK). PCB footprint and mounting hardware must be revised; thermal performance remains equivalent when both are properly heatsinked.

SPP80N06S2L-07 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:
2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4210 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
210W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

SPP80N06S2L-07 FAQ

1.How can I place an order for SPP80N06S2L-07 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP80N06S2L-07 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP80N06S2L-07 reliable?

The price and inventory of SPP80N06S2L-07 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N06S2L-07 is usually 5 days.

3.What payment methods are accepted for SPP80N06S2L-07?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N06S2L-07 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP80N06S2L-07?

SPP80N06S2L-07 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP80N06S2L-07 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP80N06S2L-07?

For technical support, including SPP80N06S2L-07 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N06S2L-07 requirements.

6.How does Aetrix verify that SPP80N06S2L-07 is sourced from the original manufacturer or authorized distributors?

All SPP80N06S2L-07 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N06S2L-07 meets industry standards.

7.What is the process for return or replacement of SPP80N06S2L-07?

All SPP80N06S2L-07 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N06S2L-07, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP80N06S2L-07 part is unused and in its original packaging.

Return procedure for SPP80N06S2L-07:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SPP80N06S2L-07 Tags

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