Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP80N06S2L-09

Name: SPP80N06S2L-09
Brand: Infineon Technologies
SKU: SPP80N06S2L-09
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SPP80N06S2L-09

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP80N06S2L-09.pdf

Description:: MOSFET N-CH 55V 80A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,565

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SPP80N06S2L-09 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO-220-3 package, rated for 55 V V_DS, 8.5 mΩ R_DS(on) at V_GS = 10 V and 52 A, and 80 A continuous drain current at T_C = 25 °C. It supports 175 °C operation, is avalanche-rated (E_AS = 370 mJ), and features dv/dt ruggedness up to 6 kV/µs - used in high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPP80N06S2L-09 datasheet, SPP80N06S2L-09 pinout, SPP80N06S2L-09 application, or SPP80N06S2L-09 equivalent, key selection criteria include R_DS(on) at 4.5 V logic drive, thermal resistance (R_thJC = 0.52–0.8 K/W), avalanche energy rating, gate charge (Q_g = 80–105 nC), and diode forward voltage (V_SD = 1.0–1.3 V).

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-current, medium-voltage applications. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from microcontrollers and PWM controllers without level-shifting.

The integrated body diode exhibits fast reverse recovery (t_rr = 57–70 ns, Q_rr = 70–90 nC) and low forward voltage, supporting synchronous rectification and freewheeling in hard-switched topologies. Thermal design is enabled by validated transient impedance curves and derating functions for P_tot and I_D vs. case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	55 V - supports 48 V nominal bus systems with 15% margin for transients
R_DS(on) @ V_GS = 10 V	6.6–8.5 mΩ - enables <1 W conduction loss at 80 A in heatsinked designs
R_DS(on) @ V_GS = 4.5 V	8.4–11.3 mΩ - ensures usable on-resistance under 5 V logic drive
Q_g Total	80–105 nC - determines gate driver current requirement (~1–2 A peak for 100 ns turn-on)
E_AS Single-Pulse	370 mJ - withstands inductive energy spikes without failure in motor control
V_SD @ I_F = 80 A	1.0–1.3 V - limits freewheeling loss and junction heating during dead-time conduction
t_rr	57–70 ns - reduces switching loss and EMI in high-frequency hard-switched converters

Pinout & Package

Package: TO-220-3 (P-TO220-3-1), through-hole, isolated tab (drain-connected), standard lead form.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path
Pin 2 (Drain)	Drain terminal	High-current output node; electrically connected to metal tab for thermal conduction
Pin 3 (Gate)	Control input	High-impedance MOSFET gate; requires low-inductance routing and gate resistor for dV/dt control

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables direct interface with 3.3 V/5 V MCUs and gate drivers
Avalanche-rated operation	Rated for repetitive unclamped inductive switching (E_AS = 370 mJ, EAR = 19 mJ)
dv/dt ruggedness	6 kV/µs - suppresses false turn-on in noisy high-dI/dt environments like motor drives
175 °C maximum junction temperature	Enables high-power density designs with reduced heatsink size in industrial enclosures
Optimized body diode	Q_rr = 70–90 nC and t_rr = 57–70 ns support efficient synchronous rectification

Applications

Motor Control

DC-DC Converters

Use Scenario: Half-bridge inverter driving brushed DC or BLDC motors in industrial automation.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 80 A peak phase current at 20–100 kHz PWM frequency.

Use Value: Low R_DS(on) and fast t_rr reduce conduction and switching losses, improving efficiency >95% at full load.

Use Scenario: Primary-side switch in 48 V input, 12 V output synchronous buck converter for telecom power supplies.

IC Role / Device Role / Timing Role: Main power switch operating at 300 kHz with 100 ns gate drive timing constraints.

Use Value: Q_g = 80–105 nC and C_iss = 2620–3480 pF enable stable, low-loss switching with standard gate drivers.

Power Inverters

Industrial Power Supplies

Use Scenario: Output stage of 1 kW solar microinverter converting DC to 230 V AC grid interface.

IC Role / Device Role / Timing Role: Bridge leg MOSFET subjected to repetitive avalanche stress during zero-crossing commutation.

Use Value: E_AS = 370 mJ and dv/dt rating ensure reliable operation without snubbers or overdesign.

Use Scenario: Hot-swap OR-ing FET in redundant 48 V server power distribution units.

IC Role / Device Role / Timing Role: Low-loss, high-reliability pass transistor controlling power path with reverse polarity protection.

Use Value: R_DS(on) ≤ 8.5 mΩ minimizes voltage drop (<0.64 V at 75 A), preserving system efficiency and thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	R_DS(on) = 8.0 mΩ @ 10 V; higher Q_g = 120 nC; no specified dv/dt rating	Lacks documented avalanche and dv/dt ruggedness; less suitable for inductive switching	Prefer when gate drive strength exceeds 2 A and avalanche stress is absent
IRF1404ZPBF	R_DS(on) = 4.7 mΩ @ 10 V but V_GS(th) = 2.0–4.0 V; not logic-level at 4.5 V	Requires 10 V gate drive for optimal R_DS(on); incompatible with 3.3 V MCU direct drive	Select only if 10 V gate supply is available and lower on-resistance justifies higher drive complexity

Compared with STP80NF55-08 and IRF1404ZPBF, the SPP80N06S2L-09 uniquely combines logic-level drive, certified avalanche capability, and 6 kV/µs dv/dt rating - making it preferred for robust, compact, and controller-integrated power stages where reliability under electrical stress is critical.

Availability

SPP80N06S2L-09 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and industrial power supply designs requiring stable component supply, long-term manufacturability, and qualified automotive-grade ruggedness.

Supply support for SPP80N06S2L-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™ power transistor product line, engineered for high-efficiency, high-current switching in industrial, computing, and renewable energy systems where thermal performance and ruggedness are critical.

FAQ

What is the maximum safe operating junction temperature for SPP80N06S2L-09?

The absolute maximum junction temperature is +175 °C, validated across all electrical parameters in the datasheet. Derating curves for P_tot and I_D vs. T_C are provided to maintain safe operation below this limit. Operation above 175 °C risks irreversible parametric shift and bondwire failure.

Does SPP80N06S2L-09 have a fully rated body diode for synchronous rectification?

Yes - its body diode is characterized for continuous forward current (I_S = 80 A at T_C = 25 °C), pulsed current (I_SM = 320 A), and reverse recovery (t_rr = 57–70 ns, Q_rr = 70–90 nC). These values are measured and guaranteed per JEDEC standards, enabling use in synchronous buck and LLC topologies.

Can SPP80N06S2L-09 be driven directly from a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage range (1.2–2.0 V) and low R_DS(on) at V_GS = 4.5 V (8.4–11.3 mΩ) confirm functional turn-on with 3.3 V logic. However, full enhancement and minimal R_DS(on) require ≥10 V; for optimal efficiency, a dedicated gate driver is recommended.

Is the TO-220 package variant (SPP80N06S2L-09) pin-compatible with the TO-263 variant (SPB80N06S2L-09)?

No - while both share identical electrical specifications, the TO-220-3 (SPP) has through-hole leads and isolated drain tab, whereas the TO-263-3 (SPB) is surface-mount with exposed drain pad. Pin numbering matches (G-D-S), but mechanical mounting, thermal path, and PCB layout are not interchangeable.

SPP80N06S2L-09 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 52A, 10V

Vgs(th) (Max) @ Id:: 2V @ 125µA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP80N06S2L-09 FAQ

1.How can I place an order for SPP80N06S2L-09 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP80N06S2L-09 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP80N06S2L-09 reliable?

The price and inventory of SPP80N06S2L-09 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N06S2L-09 is usually 5 days.

3.What payment methods are accepted for SPP80N06S2L-09?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N06S2L-09 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP80N06S2L-09?

SPP80N06S2L-09 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP80N06S2L-09 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP80N06S2L-09?

For technical support, including SPP80N06S2L-09 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N06S2L-09 requirements.

6.How does Aetrix verify that SPP80N06S2L-09 is sourced from the original manufacturer or authorized distributors?

All SPP80N06S2L-09 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N06S2L-09 meets industry standards.

7.What is the process for return or replacement of SPP80N06S2L-09?

All SPP80N06S2L-09 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N06S2L-09, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP80N06S2L-09 part is unused and in its original packaging.

Return procedure for SPP80N06S2L-09:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.