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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP80N06S2L-11

Name: SPP80N06S2L-11
Brand: Infineon Technologies
SKU: SPP80N06S2L-11
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP80N06S2L-11

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP80N06S2L-11.pdf

Description:: MOSFET N-CH 55V 80A TO220-3

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Product details

Overview

SPP80N06S2L-11 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET rated for 55 V V_DS, 11 mΩ R_DS(on) at V_GS = 10 V, and 80 A continuous drain current at T_C = 25 °C. It features AEC-Q101 qualification, avalanche rating (E_AS = 280 mJ), and dv/dt ruggedness (6 kV/µs), making it suitable for automotive DC-DC converters and motor control stages.

For engineers reviewing the SPP80N06S2L-11 datasheet, SPP80N06S2L-11 pinout, SPP80N06S2L-11 application, or SPP80N06S2L-11 equivalent, key selection criteria include its TO-220-3 package thermal resistance (R_thJC = 0.63–0.95 K/W), gate plateau voltage (3.6 V), and reverse diode forward voltage (1.0–1.3 V at 80 A).

Technical Context

This OptiMOS™ device operates in enhancement mode with a gate threshold voltage of 1.2–2.0 V and supports logic-level drive (V_GS = 4.5 V yields R_DS(on) ≤ 14.7 mΩ). Its avalanche-rated design enables robust operation under inductive switching stress without external snubbers.

The MOSFET integrates a fast-recovery body diode (t_rr = 54–67 ns, Q_rr = 61–76 nC) and exhibits low dynamic capacitances (C_iss = 1990–2650 pF, C_oss = 466–620 pF), supporting high-frequency synchronous rectification and PWM motor drives up to 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before avalanche onset; supports 48 V nominal bus systems with 15% margin.
R_DS(on) @ V_GS = 10 V	8.3–11 mΩ - Enables <1 W conduction loss at 80 A, critical for thermally constrained automotive modules.
I_D (continuous)	80 A @ T_C = 25 °C - Rated for high-current load switching; derates to 58 A at T_C = 100 °C.
E_AS	280 mJ - Single-pulse avalanche energy at I_D = 80 A, V_DD = 25 V; ensures reliability during inductive turn-off transients.
dv/dt rating	6 kV/µs - Confirmed immunity to parasitic turn-on in high-noise motor drive environments.
Q_g	60–80 nC - Total gate charge determines driver strength requirement; compatible with standard 1–2 A peak gate drivers.
V_SD @ I_F = 80 A	1.0–1.3 V - Low body diode forward voltage reduces freewheeling losses in half-bridge configurations.

Pinout & Package

Package: TO-220-3 (P-TO220-3-1), through-hole, isolated tab (drain-connected), standard lead form.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense shunt for overcurrent protection.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; driven by logic-level or dedicated gate driver IC.
Pin 3 (Drain)	Power output / high-side switch node	Internally connected to metal tab; must be electrically isolated from heatsink unless using insulating pad.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control, EPS, and ADAS power stages.
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V, enabling direct interface with 3.3 V/5 V microcontrollers.
Low R_DS(on) × Q_g figure-of-merit	~90 mΩ·nC - Balances conduction and switching losses for high-efficiency 10–100 kHz SMPS designs.
Fast body diode recovery	t_rr = 54–67 ns with soft recovery waveform - Reduces EMI and voltage overshoot in synchronous buck converters.
Thermal robustness	R_thJC = 0.63 K/W typical - Supports >150 W power dissipation with minimal junction-to-case temperature rise.

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) H-Bridge

Use Scenario: 12 V to 5 V/3.3 V step-down conversion in vehicle infotainment and ADAS ECUs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter operating at 200–500 kHz.

Use Value: 11 mΩ R_DS(on) minimizes conduction loss at 20–40 A loads, improving efficiency by ≥1.2% vs. legacy 20 mΩ MOSFETs.

Use Scenario: Bidirectional motor drive for steering assist actuation in 12 V EPS systems.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology with 10–20 kHz PWM modulation.

Use Value: Avalanche rating and 6 kV/µs dv/dt immunity prevent failure during motor phase reversal and regenerative braking events.

On-Board Charger (OBC) Auxiliary Supplies

Industrial BLDC Motor Drives

Use Scenario: Isolated auxiliary power supply (12 V/2 A) fed from 400 V DC-link in EV OBC units.

IC Role / Device Role / Timing Role: Primary-side switch in flyback converter operating at 65–100 kHz.

Use Value: 280 mJ E_AS withstands reflected voltage spikes during transformer reset without clamping circuitry.

Use Scenario: 24–48 V, 1–3 kW fan-cooled BLDC drives for HVAC and industrial pumps.

IC Role / Device Role / Timing Role: Phase-leg low-side switch in 3-phase inverter with space-vector PWM.

Use Value: 80 A continuous rating and 320 A pulsed capability support peak torque delivery without thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL80N5LF6AG	R_DS(on) = 9.5 mΩ @ 10 V, but only rated to 40 V V_DS; no AEC-Q101 certification.	Not qualified for automotive under-hood use; limited to industrial 24 V systems.	Select when cost sensitivity outweighs automotive compliance and 55 V headroom requirements.
IRF8720PBF	R_DS(on) = 12 mΩ @ 10 V, TO-220 package, no avalanche rating or dv/dt spec.	Lacks ruggedness validation for inductive switching; requires external snubber in motor drives.	Choose only for non-critical 48 V telecom or lighting applications where transient stress is low.

Compared with STL80N5LF6AG and IRF8720PBF, the SPP80N06S2L-11 uniquely combines AEC-Q101 qualification, 55 V rating, and 280 mJ avalanche energy-enabling drop-in use in automotive safety-critical power stages without redesign.

Availability

SPP80N06S2L-11 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering (EPS) systems, and on-board charger (OBC) auxiliary supplies requiring stable component supply and long-term lifecycle assurance.

Supply support for SPP80N06S2L-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

The OptiMOS™ product line delivers high-performance power MOSFETs optimized for automotive and industrial switching applications, emphasizing low R_DS(on), fast switching, and ruggedness under real-world electrical stress.

FAQ

Is SPP80N06S2L-11 suitable for 48 V battery systems?

Yes. With a 55 V V_DS rating and 15% margin above nominal 48 V, it supports peak transients up to 55 V without avalanche conduction. Its 11 mΩ R_DS(on) limits conduction loss to <7 W at 80 A, making it appropriate for high-current 48 V traction inverters and DC-DC stages.

What is the maximum recommended gate resistor for driving SPP80N06S2L-11 at 100 kHz?

A 3 Ω gate resistor is validated in the datasheet for 100 kHz switching (td(on) = 8.4–13 ns, tr = 19–29 ns). Using R_G > 5 Ω increases switching time and losses; R_G < 2 Ω risks gate driver overstress due to 80 nC Q_g and 200 A/µs di/dt capability.

Does SPP80N06S2L-11 require a heatsink in TO-220 package at 50 A continuous?

Yes. At 50 A and R_DS(on) = 10 mΩ, conduction loss is 25 W. With R_thJC = 0.95 K/W and ambient ≤ 70 °C, a heatsink with R_thHA ≤ 1.5 K/W is required to maintain T_j ≤ 150 °C. PCB copper area alone is insufficient for this load.

Can the body diode be used for synchronous rectification in a buck converter?

Yes. The body diode has t_rr = 54–67 ns and Q_rr = 61–76 nC, enabling clean commutation at ≤200 kHz. However, for best efficiency, external Schottky or MOSFET synchronous rectification is preferred above 100 kHz due to V_SD = 1.0–1.3 V forward drop.

SPP80N06S2L-11 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2V @ 93µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2650 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 158W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP80N06S2L-11 FAQ

1.How can I place an order for SPP80N06S2L-11 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP80N06S2L-11 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP80N06S2L-11 reliable?

The price and inventory of SPP80N06S2L-11 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N06S2L-11 is usually 5 days.

3.What payment methods are accepted for SPP80N06S2L-11?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N06S2L-11 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP80N06S2L-11?

SPP80N06S2L-11 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP80N06S2L-11 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP80N06S2L-11?

For technical support, including SPP80N06S2L-11 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N06S2L-11 requirements.

6.How does Aetrix verify that SPP80N06S2L-11 is sourced from the original manufacturer or authorized distributors?

All SPP80N06S2L-11 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N06S2L-11 meets industry standards.

7.What is the process for return or replacement of SPP80N06S2L-11?

All SPP80N06S2L-11 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N06S2L-11, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP80N06S2L-11 part is unused and in its original packaging.

Return procedure for SPP80N06S2L-11:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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