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Infineon Technologies SPP80N06S2L-H5
- Part No.:
- SPP80N06S2L-H5
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SPP80N06S2L-H5.pdf
- Description:
- MOSFET N-CH 55V 80A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,620
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Product details
Overview
SPP80N06S2L-H5 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET rated for 55 V VDS, 80 A continuous drain current at TC = 25 °C, and 5 mΩ RDS(on) at VGS = 4.5 V - deployed in high-current DC-DC converters, motor drives, and industrial power supplies.
For engineers reviewing the SPP80N06S2L-H5 datasheet, SPP80N06S2L-H5 pinout, SPP80N06S2L-H5 application, or SPP80N06S2L-H5 equivalent, key selection criteria include its 175 °C maximum junction temperature, 6 kV/µs dv/dt rating, integrated body diode with 76 ns trr, and TO-220-3 package thermal resistance of 0.34 K/W (typ).
Technical Context
This device operates as a unidirectional high-side or low-side switch in hard-switched topologies, leveraging its low gate charge (Qg = 145–190 nC) and fast switching (td(on) = 19–28 ns, tf = 22–33 ns) to minimize conduction and switching losses. Its RDS(on) remains stable across Tj = −60 °C to 175 °C, with only +12 mΩ drift at max temperature under 80 A.
The integrated body diode supports synchronous rectification and freewheeling functions, exhibiting VSD = 0.9–1.3 V at IF = 80 A and Qrr = 169–210 nC - critical for minimizing reverse recovery loss in buck and half-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage before avalanche; suitable for 48 V nominal bus systems with 20 % margin. |
| RDS(on) @ VGS = 4.5 V | 5 mΩ (typ) - Enables <1 W conduction loss at 80 A, reducing heatsink requirements in compact designs. |
| ID (continuous) | 80 A @ TC = 25 °C - Validated current capability with TO-220-3 mounting on standard PCB copper area. |
| EAS | 700 mJ - Single-pulse avalanche energy rating ensures robustness against inductive load transients. |
| dv/dt rating | 6 kV/µs - Confirmed immunity to false turn-on in noisy high-dI/dt environments like motor phase legs. |
| tr/tf | 23–35 ns / 22–33 ns - Fast edge rates support >500 kHz switching without excessive gate drive power. |
| Qg | 145–190 nC - Gate charge determines required driver peak current (e.g., 1.9 A avg for 100 ns rise time). |
Pinout & Package
Supplied in P-TO220-3-1 package (JEDEC TO-220AB), featuring isolated tab (drain-connected), three leads: Drain (Tab), Source (Pin 1), Gate (Pin 2). Thermal performance optimized for vertical mounting with thermal compound and heatsink contact.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Drain) | Main high-current output path | Electrically connected to drain; requires isolation from chassis unless referenced to system ground. |
| Pin 1 (Source) | Reference node for gate drive and current sensing | Low-inductance return path; used for Kelvin source connection in precision current monitoring. |
| Pin 2 (Gate) | Control input for channel modulation | High-impedance CMOS-compatible node; requires <20 V absolute max and ESD protection per IEC 61000-4-2. |
Key Features
| Feature | Design Value |
|---|---|
| 175 °C maximum junction temperature | Enables operation in sealed enclosures or high-ambient industrial environments without derating below 80 A. |
| dv/dt rated | Guarantees no spurious turn-on up to 6 kV/µs - eliminates need for external gate clamping in motor drive half-bridges. |
| Optimized body diode | Qrr = 169–210 nC and trr = 76–95 ns enable efficient freewheeling with minimal voltage overshoot. |
| Low RDS(on) @ 4.5 V | Supports direct logic-level drive from 5 V microcontrollers or PWM controllers without level-shifting. |
| Thermal resistance RthJC | 0.34 K/W (typ) - allows 300 W dissipation with ≤102 °C ΔT between junction and case at steady state. |
Applications
| Motor Drive Half-Bridge | 48 V DC-DC Buck Converter |
|---|---|
Use Scenario: High-power BLDC motor control in industrial automation with 48 V bus and 50 A phase current. IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter leg; handles continuous 80 A pulsed current with 320 A peak capability. Use Value: 5 mΩ RDS(on) reduces conduction loss to <32 W at full load, enabling air-cooled design instead of liquid cooling. | Use Scenario: Primary-side synchronous rectifier in telecom 48 V → 12 V step-down converter operating at 300 kHz. IC Role / Device Role / Timing Role: High-efficiency power switch with fast turn-off (tf = 22–33 ns) to minimize dead-time losses. Use Value: Qg = 145–190 nC enables use of low-cost gate drivers (e.g., IR2110) while maintaining <10 ns propagation delay skew. |
| Industrial UPS Inverter | EV Onboard Charger Stage |
Use Scenario: Bidirectional AC/DC inverter stage in 3 kW uninterruptible power supply with active PFC front-end. IC Role / Device Role / Timing Role: High-reliability switching device in H-bridge output stage; subjected to repetitive avalanche stress during grid faults. Use Value: 700 mJ EAS rating ensures single-event survivability under 80 A inductive fault currents without degradation. | Use Scenario: Secondary-side isolation switch in 6.6 kW OBC using dual-active-bridge topology with SiC primary. IC Role / Device Role / Timing Role: Synchronous rectifier in LLC resonant tank secondary; conducts 80 A RMS with low forward drop (VSD = 0.9–1.3 V). Use Value: Body diode trr = 76–95 ns minimizes reverse recovery spikes, reducing EMI filter size by 30 % vs. standard MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFB4115PBF | RDS(on) = 4.5 mΩ @ 10 V, but requires 10 V gate drive; no 4.5 V rating specified. | Not suitable for 5 V logic-level drive; needs dedicated gate driver with ≥10 V output. | Select when gate drive voltage ≥10 V is available and lowest possible RDS(on) is prioritized over drive simplicity. |
| STP80NF55-08 | RDS(on) = 8 mΩ @ 10 V; higher threshold (2–4 V); no dv/dt rating published. | Limited suitability in high-noise motor drives due to lack of guaranteed dv/dt immunity. | Prefer where cost sensitivity outweighs switching speed and noise immunity requirements. |
Compared with IRFB4115PBF and STP80NF55-08, SPP80N06S2L-H5 uniquely combines 4.5 V logic-level operation, 6 kV/µs dv/dt rating, and 700 mJ avalanche energy - making it optimal for space-constrained, noise-prone industrial inverters requiring robust gate drive and fault tolerance.
Availability
SPP80N06S2L-H5 is available at Aetrix Electronics and suitable for motor drives, 48 V DC-DC converters, and industrial UPS systems requiring stable component supply and long-term lifecycle assurance.
Supply support for SPP80N06S2L-H5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
This part belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered for high-current, high-efficiency switching in industrial power conversion and motor control applications.
FAQ
What is the maximum safe gate-source voltage for SPP80N06S2L-H5?
The absolute maximum VGS is ±20 V per datasheet specifications. Operation above ±20 V risks permanent gate oxide damage. For reliable long-term performance, gate drive should be limited to 12–15 V with transient clamping, especially in high-noise environments where ringing may exceed steady-state levels.
Can SPP80N06S2L-H5 be used in parallel configurations?
Yes - its positive temperature coefficient for RDS(on) (increasing with junction temperature) enables inherent current sharing. Parallel operation requires matched layout, identical gate drive impedance, and Kelvin source connections to avoid oscillation. Derate total current by 15 % for thermal imbalance in multi-device arrays.
Is the TO-220 package electrically isolated?
No - the metal tab is internally connected to the drain terminal. Electrical isolation from heatsink or chassis must be achieved using insulating pads or shoulder washers rated for ≥55 V working voltage and thermal conductivity ≥1.0 W/m·K to maintain RthJC performance.
What is the recommended PCB footprint for thermal performance?
For optimal thermal resistance, use a minimum 6 cm² copper pour (single-layer, 70 µm thick) on FR4 PCB connected directly to the drain tab. The PCB must be mounted vertically without forced airflow. Smaller footprints increase RthJA to 62 K/W, limiting usable power to ~48 W at ambient 50 °C.
SPP80N06S2L-H5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs:
- 190 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6640 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3-1
SPP80N06S2L-H5 FAQ
1.How can I place an order for SPP80N06S2L-H5 through Aetrix?
Please submit a Request for Quotation (RFQ) for SPP80N06S2L-H5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPP80N06S2L-H5 reliable?
The price and inventory of SPP80N06S2L-H5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N06S2L-H5 is usually 5 days.
3.What payment methods are accepted for SPP80N06S2L-H5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N06S2L-H5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPP80N06S2L-H5?
SPP80N06S2L-H5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPP80N06S2L-H5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPP80N06S2L-H5?
For technical support, including SPP80N06S2L-H5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N06S2L-H5 requirements.
6.How does Aetrix verify that SPP80N06S2L-H5 is sourced from the original manufacturer or authorized distributors?
All SPP80N06S2L-H5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N06S2L-H5 meets industry standards.
7.What is the process for return or replacement of SPP80N06S2L-H5?
All SPP80N06S2L-H5 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N06S2L-H5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPP80N06S2L-H5 part is unused and in its original packaging.
Return procedure for SPP80N06S2L-H5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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