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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP80N08S2-07

Name: SPP80N08S2-07
Brand: Infineon Technologies
SKU: SPP80N08S2-07
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP80N08S2-07

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP80N08S2-07.pdf

Description:: MOSFET N-CH 75V 80A TO220-3

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Product details

Overview

SPP80N08S2-07 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET in TO-220-3-1 package, rated for 75 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 7.1 mΩ max R_DS(on) at V_GS = 10 V. It supports 175 °C operation, is avalanche-rated (E_AS = 810 mJ), and dv/dt-rated (6 kV/µs), making it suitable for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPP80N08S2-07 datasheet, SPP80N08S2-07 pinout, SPP80N08S2-07 application, or SPP80N08S2-07 equivalent, key selection criteria include R_DS(on) temperature stability, safe operating area under pulsed loads, gate charge profile for switching loss estimation, and thermal resistance (R_thJC = 0.5 K/W) for heatsink sizing in industrial power stages.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in hard-switched topologies. Its 75 V breakdown voltage and 80 A rating target 48 V input systems such as telecom rectifiers and BLDC motor controllers where high peak current capability and robustness against transient overvoltage are required.

The device integrates a fast, low-Q_rr body diode (Q_rr = 470–590 nC, t_rr = 110–140 ns) with controlled reverse recovery, enabling efficient synchronous rectification and freewheeling in buck and half-bridge configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage; defines use in ≤48 V bus systems with margin for transients
R_DS(on) max	7.1 mΩ at V_GS = 10 V, I_D = 66 A - Enables <1 W conduction loss at 80 A, critical for thermal management
I_D cont.	80 A at T_C = 25 °C - Sustained current capability limited by bondwire; derates to ~50 A at T_C = 100 °C
E_AS	810 mJ single-pulse avalanche energy - Supports unclamped inductive switching in motor drives without snubbers
Q_g	138–180 nC - Determines gate driver power requirement and switching speed trade-off in 100–500 kHz designs
R_thJC	0.3–0.5 K/W - Junction-to-case thermal resistance enables direct mounting to heatsinks with predictable ΔT
t_rr	110–140 ns - Fast body diode recovery reduces shoot-through risk and EMI in bridge-leg commutation

Pinout & Package

Package: TO-220-3-1 (P-TO220-3-1), through-hole, isolated tab, standard lead form. Thermal pad electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path, high-side switch node	Electrically connected to metal tab; requires insulating washer if mounted to grounded heatsink
Source	Reference node for gate drive and current sensing	Low-inductance connection essential for stable gate control and accurate R_DS(on)-based current monitoring
Gate	Control terminal for channel modulation	High-impedance input; requires low-impedance driver (≤2.2 Ω) to achieve specified t_d(on)/t_d(off)

Key Features

Feature	Design Value
Avalanche-rated operation	810 mJ single-pulse energy tolerance ensures reliability during inductive load turn-off without external clamping
175 °C maximum junction temperature	Enables operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial PLCs)
dv/dt ruggedness	6 kV/µs immunity prevents false turn-on in noisy high-dV/dt applications like motor phase legs
Low gate charge asymmetry	Q_gd/Q_g ≈ 45–64 % enables precise Miller plateau timing for optimized hard-switching transitions
Thermally enhanced packaging	R_thJC = 0.5 K/W allows >250 W dissipation with modest heatsinking-critical for space-constrained 1 kW+ converters

Applications

Motor Drive Half-Bridge

Telecom DC-DC Converter

Use Scenario: High-current BLDC motor phase leg in industrial automation system operating at 48 V bus with 100 A peak phase current.

IC Role / Device Role / Timing Role: Low-side switching element in synchronous rectified half-bridge; conducts during PWM off-time with body diode freewheeling.

Use Value: 7.1 mΩ R_DS(on) limits conduction loss to <0.5 W at 80 A, while 810 mJ E_AS absorbs inductive energy during fault shutdown.

Use Scenario: Primary-side synchronous rectifier in 48 V input, 12 V output, 1.2 kW telecom rectifier module.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode; driven synchronously with primary FET to reduce forward drop.

Use Value: 0.9–1.3 V V_SD and 110–140 ns t_rr minimize conduction and recovery losses versus 0.55 V Schottky with 30 ns t_rr but higher leakage.

Industrial UPS Inverter

EV Onboard Charger Stage

Use Scenario: Output stage of 3 kW three-phase inverter for uninterruptible power supply with forced-air cooling.

IC Role / Device Role / Timing Role: High-current switching device in IGBT replacement topology; handles 80 A RMS with 320 A pulsed peaks.

Use Value: 320 A I_D,puls and 6 kV/µs dv/dt rating prevent spurious turn-on during fast bus transients in transformer-isolated inverters.

Use Scenario: DC-link switching stage in bidirectional OBC handling 6.6 kW AC/DC and DC/AC conversion.

IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole PFC; operates at 100–200 kHz with zero-voltage switching assist.

Use Value: C_iss = 4610–6130 pF and Q_g = 138–180 nC enable ZVS design with <500 ns dead time, reducing switching loss by ≥35 % vs. SiC alternatives at same cost point.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP4110PBF	75 V, 110 A, R_DS(on) = 6.5 mΩ, TO-247 package, higher Q_g (210 nC)	Larger footprint, higher gate drive power; better for lower-frequency, higher-current designs	Select when >100 A continuous current or lower R_DS(on) is prioritized over board space and gate drive efficiency
STP80NF55-08	55 V, 80 A, R_DS(on) = 8.5 mΩ, TO-220, no avalanche rating	Lower voltage rating; unsuitable for 48 V systems with >20 V transients; no E_AS spec	Acceptable only in tightly regulated 24 V systems with external clamping; avoid in motor or inductive-load applications

Compared with IRFP4110PBF and STP80NF55-08, SPP80N08S2-07 delivers optimal balance of 75 V rating, 7.1 mΩ on-resistance, and 810 mJ avalanche robustness in compact TO-220-making it preferred for space-constrained 48 V industrial power stages requiring field reliability without overspec'ed packages or missing safety margins.

Availability

SPP80N08S2-07 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and EV onboard charger stages requiring stable component supply across multi-year production cycles.

Supply support for SPP80N08S2-07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial and telecom power supplies where thermal performance and ruggedness outweigh ultra-high-frequency optimization.

FAQ

What is the maximum allowable gate-source voltage for SPP80N08S2-07?

The absolute maximum V_GS is ±20 V per datasheet specifications. Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is +10 V to ensure full enhancement and -5 V to -10 V for fast, reliable turn-off-especially critical in half-bridge configurations to prevent shoot-through.

Does SPP80N08S2-07 require a gate resistor, and what value is recommended?

Yes-a series gate resistor is mandatory to dampen ringing and control dV/dt. For 80 A switching at 100–200 kHz, a 2.2 Ω resistor is validated in the datasheet for td(on)/td(off) timing. Lower values increase switching speed but raise EMI and gate driver stress; higher values improve EMI but increase switching losses proportionally to Q_g.

Can SPP80N08S2-07 be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (R_DS(on) increases with T_j) enables inherent current sharing. Successful parallel operation requires matched layout (identical trace lengths, symmetric gate routing), individual gate resistors (≤2.2 Ω), and thermally coupled mounting to maintain <5 °C inter-device ΔT at full load.

Is the TO-220 tab electrically isolated, and how should it be mounted?

Yes-the TO-220-3-1 package features an electrically isolated drain tab. When mounting to a conductive heatsink, use a mica or ceramic insulator with thermal grease. Ensure mechanical pressure is uniform and torque does not exceed 0.5 N·m to avoid package cracking or internal wire bond damage.

SPP80N08S2-07 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.4mOhm @ 66A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6130 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP80N08S2-07 FAQ

1.How can I place an order for SPP80N08S2-07 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP80N08S2-07 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP80N08S2-07 reliable?

The price and inventory of SPP80N08S2-07 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N08S2-07 is usually 5 days.

3.What payment methods are accepted for SPP80N08S2-07?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N08S2-07 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP80N08S2-07?

SPP80N08S2-07 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP80N08S2-07 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP80N08S2-07?

For technical support, including SPP80N08S2-07 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N08S2-07 requirements.

6.How does Aetrix verify that SPP80N08S2-07 is sourced from the original manufacturer or authorized distributors?

All SPP80N08S2-07 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N08S2-07 meets industry standards.

7.What is the process for return or replacement of SPP80N08S2-07?

All SPP80N08S2-07 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N08S2-07, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP80N08S2-07 part is unused and in its original packaging.

Return procedure for SPP80N08S2-07:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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