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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP80N08S2L-07

Name: SPP80N08S2L-07
Brand: Infineon Technologies
SKU: SPP80N08S2L-07
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP80N08S2L-07

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP80N08S2L-07.pdf

Description:: MOSFET N-CH 75V 80A TO220-3

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Product details

Overview

SPP80N08S2L-07 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO-220-3 package, rated for 75 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 6.8 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating, 175 °C maximum junction temperature, and dv/dt ruggedness-designed for high-current DC-DC primary-side switching in industrial SMPS.

For engineers reviewing the SPP80N08S2L-07 datasheet, SPP80N08S2L-07 pinout, SPP80N08S2L-07 application, or SPP80N08S2L-07 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (810 mJ), thermal resistance (R_thJC = 0.5 K/W), and diode reverse recovery charge (Q_rr = 250 nC).

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching and robust unclamped inductive switching (UIS) capability. Its 1.2–2.0 V gate threshold voltage enables reliable turn-on with standard logic-level drivers, and its 5.3 mΩ R_DS(on) at V_GS = 10 V supports high-efficiency operation in hard-switched topologies.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 80 A and 81–100 ns reverse recovery time, with Q_rr of 197–250 nC-critical for minimizing commutation losses in synchronous rectification and half-bridge configurations where diode conduction occurs during dead-time.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage for 48 V bus systems with 50 % safety margin against transients
R_DS(on) max @ V_GS = 10 V	6.8 mΩ - Enables ≤ 43 W conduction loss at 80 A, supporting high-current output stages
I_D continuous @ T_C = 25 °C	80 A - Sustains full-load current without derating when mounted on heatsink with <0.5 K/W thermal path
E_AS single-pulse	810 mJ - Withstands inductive energy spikes up to 25 V × 80 A × 4.05 µs, critical for UPS and motor drive snubbing
Q_g total	233 nC - Determines gate driver strength requirement (~1.5 A peak for 150 ns rise time with 1.1 Ω RG)
dv/dt rating	6 kV/µs - Ensures immunity to parasitic turn-on in high-di/dt environments like PFC boost stages
T_j max	175 °C - Supports operation in sealed enclosures or high-ambient industrial environments without forced cooling

Pinout & Package

Package: TO-220-3 (P-TO220-3-1), through-hole, isolated tab (drain-connected). Thermal resistance junction-to-case is 0.3–0.5 K/W; case-to-heatsink interface requires thermal compound and mechanical clamping.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path; carries full load current
Pin 2 (Gate)	Control input	High-impedance MOSFET gate; requires <233 nC charge for full turn-on; sensitive to ESD and ringing
Pin 3 (Drain)	Power output / high-side switch node	Connected to heatsink tab; carries switched high-voltage rail; must be isolated from other potentials

Key Features

Feature	Design Value
Logic-level gate drive	Turns fully on with V_GS ≥ 4.5 V-compatible with 3.3 V and 5 V microcontrollers without level-shifting
Avalanche-rated	Guaranteed 810 mJ single-pulse energy handling-eliminates need for external snubbers in inductive load switching
175 °C operation	Enables use in sealed power supplies or automotive under-hood applications without thermal throttling
Low Q_gd/Q_g ratio	66/233 nC (28 %)-reduces Miller-induced switching delay and improves hard-switching efficiency
Fast body diode	t_rr = 81–100 ns with Q_rr = 197–250 nC-minimizes cross-conduction loss in synchronous buck converters

Applications

Industrial Switched-Mode Power Supplies

Server & Telecom DC-DC Converters

Use Scenario: Primary-side switch in 1–3 kW LLC resonant converters powering 12 V/48 V server racks.

IC Role / Device Role / Timing Role: High-side power switch operating at 100–300 kHz with zero-voltage switching; handles 80 A peak primary current.

Use Value: 6.8 mΩ R_DS(on) reduces conduction loss by >30 % vs. legacy 10 mΩ MOSFETs, improving full-load efficiency to >96 %.

Use Scenario: Synchronous rectifier in 48 V input, 12 V output isolated forward converter for telecom base stations.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; driven by transformer-coupled gate signal.

Use Value: Body diode Q_rr of 250 nC limits reverse recovery loss to <1.5 W per device, enabling >94 % light-load efficiency.

Uninterruptible Power Supplies (UPS)

Motor Drive Inverter Stages

Use Scenario: Bidirectional DC link switch in online double-conversion UPS with battery backup and grid synchronization.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 75 V DC bus stage; conducts 80 A continuous during battery discharge.

Use Value: 810 mJ E_AS withstands worst-case short-circuit events without failure, meeting UL 1741 fault ride-through requirements.

Use Scenario: Phase-leg high-side switch in 3-phase BLDC inverter for HVAC compressors rated up to 5 HP.

IC Role / Device Role / Timing Role: PWM-controlled power switch operating at 8–16 kHz; subjected to repetitive inductive kickback during commutation.

Use Value: 6 kV/µs dv/dt rating prevents false turn-on during fast voltage transitions across motor windings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	R_DS(on) = 8.0 mΩ @ 10 V; lower Q_g (160 nC); no specified dv/dt rating	Lacks 6 kV/µs dv/dt immunity-requires gate resistors and layout mitigation in high-di/dt inverters	Preferable where gate drive strength is limited and avalanche stress is minimal
IRFB4115PBF	R_DS(on) = 5.5 mΩ @ 10 V; higher ID (115 A); TO-220FP package (lower P_tot = 104 W)	Lower thermal mass and 0.9 K/W R_thJC limit sustained 80 A operation without aggressive heatsinking	Better for space-constrained designs needing lower R_DS(on), but not for continuous 80 A at 25 °C case temp

Compared with STP80NF55-08 and IRFB4115PBF, SPP80N08S2L-07 uniquely balances 6.8 mΩ conduction loss, 810 mJ avalanche robustness, and 6 kV/µs dv/dt rating-making it optimal for industrial SMPS and UPS where reliability under transient stress is non-negotiable.

Availability

SPP80N08S2L-07 is available at Aetrix Electronics and suitable for industrial switched-mode power supplies, server DC-DC converters, and uninterruptible power systems requiring stable component supply and long-term lifecycle support.

Supply support for SPP80N08S2L-07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

SPP80N08S2L-07 belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion and motor control applications.

FAQ

What is the maximum safe operating temperature for SPP80N08S2L-07?

The absolute maximum junction temperature is +175 °C, and the storage temperature range is –55 °C to +175 °C. Continuous operation at T_j = 175 °C requires strict thermal design: R_thJC ≤ 0.5 K/W and R_thCA ≤ 0.2 K/W to maintain T_C ≤ 100 °C under 80 A load. Derating curves on page 4 confirm 60 A max at T_C = 100 °C.

Does SPP80N08S2L-07 support 3.3 V logic-level gate drive?

Yes-its gate threshold voltage V_GS(th) is specified from 1.2 V to 2.0 V, and R_DS(on) is characterized down to V_GS = 4.5 V (6.5 mΩ typ). At V_GS = 3.3 V, typical R_DS(on) rises to ~12 mΩ, limiting continuous current to ~55 A at T_C = 25 °C per the ID vs. TC curve on page 4.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 0.9–1.3 V at 80 A and t_rr = 81–100 ns, with Q_rr = 197–250 nC. While forward voltage is higher than a 45 V Schottky (0.45 V), its soft recovery and co-packaged integration eliminate layout parasitics-making it preferable in synchronous rectifiers where diode placement and routing inductance dominate losses.

Is SPP80N08S2L-07 suitable for automotive applications?

It is not AEC-Q101 qualified and lacks automotive-specific qualification testing (e.g., HTOL, UHAST, ESD HBM >2 kV). Though rated for 175 °C operation and avalanche ruggedness, Infineon positions this part for industrial and telecom-not automotive-use. For automotive 12 V/48 V systems, consider AEC-Q101-qualified OptiMOS™ 5 variants like IPP80N06S5-05.

SPP80N08S2L-07 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.1mOhm @ 67A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 233 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6820 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP80N08S2L-07 FAQ

1.How can I place an order for SPP80N08S2L-07 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP80N08S2L-07 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP80N08S2L-07 reliable?

The price and inventory of SPP80N08S2L-07 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N08S2L-07 is usually 5 days.

3.What payment methods are accepted for SPP80N08S2L-07?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N08S2L-07 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP80N08S2L-07?

SPP80N08S2L-07 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP80N08S2L-07 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP80N08S2L-07?

For technical support, including SPP80N08S2L-07 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N08S2L-07 requirements.

6.How does Aetrix verify that SPP80N08S2L-07 is sourced from the original manufacturer or authorized distributors?

All SPP80N08S2L-07 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N08S2L-07 meets industry standards.

7.What is the process for return or replacement of SPP80N08S2L-07?

All SPP80N08S2L-07 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N08S2L-07, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP80N08S2L-07 part is unused and in its original packaging.

Return procedure for SPP80N08S2L-07:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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