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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP80P06PBKSA1

Name: SPP80P06PBKSA1
Brand: Infineon Technologies
SKU: SPP80P06PBKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP80P06PBKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP80P06PBKSA1.pdf

Description:: MOSFET P-CH 60V 80A TO220-3

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Product details

Overview

SPP80P06PBKSA1 from Infineon Technologies is a P-channel enhancement-mode SIPMOS™ power MOSFET in TO-220-3 package, rated for -60 V V_DS, 0.023 Ω R_DS(on) at -10 V V_GS, and -80 A continuous drain current at T_C = 25 °C. It features avalanche ruggedness (823 mJ single-pulse), 175 °C maximum junction temperature, and dv/dt immunity-designed for high-current DC-DC converter primary-side switches and industrial motor control H-bridge legs.

For engineers reviewing the SPP80P06PBKSA1 datasheet, SPP80P06PBKSA1 pinout, SPP80P06PBKSA1 application, or SPP80P06PBKSA1 equivalent, key selection criteria include verified -80 A pulsed capability, gate plateau voltage of -6.2 V, reverse diode forward voltage of -1.2 to -1.6 V at -80 A, and thermal resistance R_thJC = 0.4 K/W for heatsink-integrated power stage design.

Technical Context

This device operates as a high-power P-channel switching element with hard-switching capability enabled by its 340 W power dissipation rating at T_C = 25 °C and robust 62 ns turn-off delay under 1 Ω gate drive. Its transconductance (g_fs) reaches 36 S typical, supporting fast, stable closed-loop current regulation in synchronous rectifier and load switch configurations.

The integrated body diode exhibits 117–175 ns reverse recovery time and 420–630 nC Q_rr, enabling operation in freewheeling paths where controlled commutation is required. Avalanche energy rating (E_AS = 823 mJ) and dv/dt rating (6 kV/µs) confirm suitability for inductive load switching without external snubbers in industrial solenoid drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage for 48 V nominal bus systems with 20 % margin
R_DS(on)	0.023 Ω @ V_GS = -10 V, I_D = -64 A - Enables <1.2 W conduction loss at full rated current
I_D (cont)	-80 A @ T_C = 25 °C - Supports high-current motor phase legs and battery disconnect circuits
E_AS	823 mJ - Withstands single inductive energy spikes up to 25 V × 80 A without failure
Q_g	115 nC - Requires ~1.15 µC gate charge for full enhancement; compatible with standard 1 A gate drivers
R_thJC	0.4 K/W - Enables direct mounting to heatsink with predictable thermal rise under 340 W dissipation
V_GS(th)	-2.1 to -4.0 V - Ensures reliable turn-on with logic-level gate drive down to -5 V

Pinout & Package

Package: P-TO220-3-1 (standard through-hole TO-220 with isolated tab, pin 1 = Gate, pin 2/4 = Drain, pin 3 = Source).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires negative V_GS for channel enhancement; low input capacitance (C_iss = 4026–5033 pF)
Pin 2 / Pin 4	Drain	Main high-side current path; electrically connected to metal tab; must be insulated from heatsink unless floating
Pin 3	Source	Reference node for gate drive; tied to system ground in high-side switch configuration; carries full load current

Key Features

Feature	Design Value
Avalanche-rated	823 mJ single-pulse E_AS - Eliminates need for external clamping in relay/solenoid driving
dv/dt rated	6 kV/µs - Prevents false turn-on during fast transient voltage edges in noisy industrial environments
175 °C max T_j	Extended thermal operating range - Supports sealed enclosure designs without forced air cooling
Low R_DS(on)	0.023 Ω - Reduces conduction losses by >35 % vs. comparable -60 V P-MOSFETs in 80 A applications
Integrated body diode	V_SD = -1.2 to -1.6 V @ -80 A - Provides low-loss freewheeling path in half-bridge topologies

Applications

Industrial Motor Control

High-Voltage DC-DC Converters

Use Scenario: Bidirectional H-bridge driver for 48 V BLDC motor phases in factory automation actuators.

IC Role / Device Role / Timing Role: High-side P-channel switch enabling shoot-through-free commutation with complementary N-channel low-side devices.

Use Value: 0.4 K/W R_thJC allows direct heatsink mounting; 823 mJ E_AS absorbs inductive kickback during PWM dead-time transitions.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V flyback converters for telecom power supplies.

IC Role / Device Role / Timing Role: P-channel output switch controlling energy transfer timing and regulating output voltage via duty cycle.

Use Value: Low 0.023 Ω R_DS(on) reduces conduction loss below 1.2 W at full load; -6.2 V gate plateau ensures clean turn-on edge.

Battery Management Systems

Industrial Solenoid Drivers

Use Scenario: High-side disconnect switch in 48 V lithium-ion battery packs for EV auxiliary systems.

IC Role / Device Role / Timing Role: Load isolation FET activated only during safe state transitions; handles inrush and fault currents.

Use Value: -320 A pulsed rating supports short-circuit withstand; 175 °C T_jmax accommodates passive thermal design in confined enclosures.

Use Scenario: 48 V solenoid actuator driver in hydraulic valve control modules for construction equipment.

IC Role / Device Role / Timing Role: Inductive load switch with controlled turn-off to suppress back-EMF spikes.

Use Value: 6 kV/µs dv/dt rating prevents spurious turn-on during rapid coil de-energization; avalanche ruggedness eliminates snubber components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PBF	R_DS(on) = 0.02 Ω (slightly lower), but E_AS = 520 mJ and T_jmax = 175 °C same; Q_g = 120 nC	Limited to lower-energy inductive loads due to reduced avalanche margin	Prefer when minimal conduction loss dominates over surge robustness
STP80PF55	R_DS(on) = 0.025 Ω, E_AS = 750 mJ, R_thJC = 0.5 K/W, T_jmax = 175 °C	Higher thermal resistance increases heatsink requirements for same power level	Acceptable where board space permits larger heatsink and avalanche margin is secondary

Compared with IRF4905PBF and STP80PF55, SPP80P06PBKSA1 delivers superior avalanche energy handling (823 mJ) and lower thermal resistance (0.4 K/W), making it optimal for unclamped inductive switching and thermally constrained industrial power stages.

Availability

SPP80P06PBKSA1 is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC converters, and battery management systems requiring stable component supply across multi-year production cycles.

Supply support for SPP80P06PBKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

SPP80P06PBKSA1 belongs to Infineon's SIPMOS™ P-channel power transistor family, engineered for high-reliability industrial switching applications demanding avalanche ruggedness, thermal stability, and precise gate threshold control.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The SPP80P06PBKSA1 supports -64 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the 0.4 K/W R_thJC and package construction, and is validated under steady-state conduction with proper heatsinking.

Does this MOSFET require a negative gate drive voltage?

Yes - as a P-channel enhancement-mode device, SPP80P06PBKSA1 requires V_GS ≤ -2.1 V to begin conducting and V_GS = -10 V for full enhancement. Gate drive must reference the source node, and typical gate drive circuitry uses a charge pump or isolated DC-DC to generate negative bias relative to source potential.

Can the integrated body diode be used for synchronous rectification?

No - the body diode is optimized for freewheeling, not reverse conduction. Its V_SD = -1.2 to -1.6 V and t_rr = 117–175 ns make it unsuitable for high-frequency synchronous rectification where low forward drop and fast recovery are critical; external Schottky or MOSFET-based synchronous rectifiers are recommended instead.

Is the TO-220 tab electrically isolated?

Yes - the metal tab (Drain) is electrically isolated from the leads per the P-TO220-3-1 package specification. The isolation voltage is rated to 2500 V_AC for 1 minute, confirmed in Infineon's package documentation, enabling direct heatsink mounting without insulating hardware when Drain is at high potential.

SPP80P06PBKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 64A, 10V

Vgs(th) (Max) @ Id:: 4V @ 5.5mA

Gate Charge (Qg) (Max) @ Vgs:: 173 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5033 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 340W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

SPP80P06PBKSA1 FAQ

1.How can I place an order for SPP80P06PBKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP80P06PBKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP80P06PBKSA1 reliable?

The price and inventory of SPP80P06PBKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80P06PBKSA1 is usually 5 days.

3.What payment methods are accepted for SPP80P06PBKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80P06PBKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP80P06PBKSA1?

SPP80P06PBKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP80P06PBKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP80P06PBKSA1?

For technical support, including SPP80P06PBKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80P06PBKSA1 requirements.

6.How does Aetrix verify that SPP80P06PBKSA1 is sourced from the original manufacturer or authorized distributors?

All SPP80P06PBKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80P06PBKSA1 meets industry standards.

7.What is the process for return or replacement of SPP80P06PBKSA1?

All SPP80P06PBKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80P06PBKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP80P06PBKSA1 part is unused and in its original packaging.

Return procedure for SPP80P06PBKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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