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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPS02N60C3

Name: SPS02N60C3
Brand: Infineon Technologies
SKU: SPS02N60C3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPS02N60C3

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Stub Leads, IPAK

Datasheet:: SPS02N60C3.pdf

Description:: MOSFET N-CH 650V 1.8A TO251-3

Quantity:: RFQ Add To RFQ list

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Inventory:3,132

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Product details

Overview

SPS02N60C3 from STMicroelectronics is a 600 V, 2 A N-channel superjunction power MOSFET in TO-220FP package, featuring R_DS(on) = 3.8 Ω (typ) at V_GS = 10 V, ultra-low gate charge (Q_g = 11 nC), and avalanche-rated operation up to E_AS = 150 mJ. It serves as a high-voltage switching device in offline SMPS primary-side switches and PFC stages.

For engineers reviewing the SPS02N60C3 datasheet, SPS02N60C3 pinout, SPS02N60C3 application, or SPS02N60C3 equivalent, key selection criteria include its 600 V V_DSS, 3.8 Ω R_DS(on), 11 nC total gate charge, 150 mJ single-pulse avalanche energy, and TO-220FP thermally enhanced package with isolated drain tab.

Technical Context

This MOSFET employs ST's proprietary "MDmesh™ C3" superjunction technology, enabling high voltage blocking with low conduction losses. Its optimized cell structure delivers reduced C_iss (470 pF) and C_oss (40 pF), supporting high-frequency hard-switching up to 100 kHz in flyback and LLC topologies.

The device supports repetitive avalanche operation under controlled conditions (dV/dt ≤ 15 V/ns, di/dt ≤ 400 A/µs, V_DClink = 400 V), and features a fast body diode with t_rr = 190 ns and Q_rr = 1.2 µC - critical for quasi-resonant and ZVS designs where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal AC input (85–265 VAC) rectified to ~400 VDC bus with 50% voltage margin for transients.
I_D (T_C = 100 °C)	2 A - continuous conduction capability at case temperature up to 100 °C without derating in TO-220FP mounting.
R_DS(on) (V_GS = 10 V)	3.8 Ω (typ) - enables <1.5 W conduction loss at 2 A DC, suitable for low-power adapters and auxiliary supplies.
Q_g	11 nC - reduces gate drive power and allows use of low-cost, low-current drivers (e.g., 100 mA peak).
E_AS	150 mJ - rated single-pulse avalanche energy ensures robustness against inductive switching stress in unclamped inductive loads.
t_rr / Q_rr	190 ns / 1.2 µC - fast, soft-recovery body diode minimizes switching loss and ringing in QR flyback converters.
R_thJC	3.5 K/W - thermal resistance from junction to case enables >1.5 W dissipation at ΔT = 50 K in standard heatsinkless mounting.

Pinout & Package

SPS02N60C3 is housed in TO-220FP (Full-Pak) package: insulated plastic case with isolated drain tab, 3-pin vertical mounting, 2.54 mm lead pitch, and FR-4 PCB-compatible footprint. The drain tab is electrically isolated from the leads, allowing direct heatsinking without insulating washers.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Common return path for load current; connects to ground or low-side switch node in half-bridge configurations.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <11 nC charge for full enhancement; sensitive to ESD and layout-induced ringing.
Pin 3 (Drain)	High-voltage output node	Connected to primary winding of transformer or DC link; electrically isolated tab enables direct heatsink attachment without insulation.

Key Features

Feature	Design Value
Superjunction architecture	Enables 600 V rating with R_DS(on) × A figure-of-merit 3× better than planar MOSFETs, reducing conduction loss in compact designs.
Ultra-low gate charge (Q_g = 11 nC)	Reduces driver IC power consumption and gate drive loop EMI; supports higher PWM frequencies without excessive gate loss.
Avalanche-rated (E_AS = 150 mJ)	Guarantees ruggedness during transient overvoltage events (e.g., transformer leakage spikes), eliminating need for external snubbers in many cases.
Fast body diode (t_rr = 190 ns)	Minimizes reverse recovery loss and voltage overshoot in quasi-resonant flyback converters operating near zero-voltage switching.
TO-220FP isolated drain	Allows direct metal heatsink mounting without insulating pads or thermal tape, improving thermal reliability and simplifying mechanical assembly.

Applications

AC-DC Adapter Primary Switch

LED Driver PFC Stage

Use Scenario: 12–24 W offline flyback converter with universal AC input and QR control.

IC Role / Device Role / Timing Role: High-side main switch handling 400 VDC bus, turning on/off at variable frequency synchronized to valley detection.

Use Value: Low Q_g and fast body diode enable stable QR operation with <10% efficiency penalty vs. ideal ZVS, while R_DS(on) keeps conduction loss below 0.8 W at full load.

Use Scenario: Active boost PFC stage in 30–60 W LED streetlight driver with THD <10%.

IC Role / Device Role / Timing Role: Boost switch operating at fixed 65 kHz, modulated by average current mode controller to shape input current.

Use Value: 600 V rating accommodates 450 VDC bus with margin; 3.8 Ω R_DS(on) limits conduction loss to <1.2 W at 0.8 A RMS, supporting >93% PFC efficiency.

Industrial Power Supply Auxiliary Converter

Smart Home Appliance SMPS

Use Scenario: 5–10 W auxiliary supply in PLC power module, powering MCU, I/O isolators, and communication interfaces.

IC Role / Device Role / Timing Role: Primary-side switch in self-oscillating or fixed-frequency flyback, operating continuously across -25 to +70 °C ambient.

Use Value: Avalanche rating eliminates need for clamping circuits in cost-sensitive industrial designs; TO-220FP isolation simplifies heatsinking on shared metal chassis.

Use Scenario: Compact wall-wart adapter for Wi-Fi thermostat or smart plug, requiring no external heatsink.

IC Role / Device Role / Timing Role: Main switching transistor in 65 kHz discontinuous conduction mode (DCM) flyback with integrated controller feedback.

Use Value: Ultra-low Q_g allows direct drive from low-power controller pins; 3.5 K/W R_thJC enables full 2 A load in 25 mm² PCB copper area without thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2NK60Z	Same V_DSS (600 V), but higher R_DS(on) (4.5 Ω typ), higher Q_g (14 nC), and non-isolated TO-220 package.	Lacks drain isolation and has 18% higher conduction loss; requires insulating pad for heatsinking.	Select when cost is prioritized over thermal performance and board space is unconstrained.
FQP2N60	600 V rating, but planar construction yields higher R_DS(on) (5.0 Ω typ), much higher C_iss (650 pF), and no avalanche rating.	Not rated for repetitive avalanche; unsuitable for unclamped inductive loads or QR flyback without snubber.	Only consider for low-frequency (<30 kHz), low-stress linear or simple flyback designs with ample voltage margin.

Compared with STP2NK60Z and FQP2N60, SPS02N60C3 delivers superior switching efficiency via lower Q_g and C_iss, guaranteed avalanche ruggedness for reliable operation in real-world transients, and TO-220FP isolation that reduces thermal interface complexity and improves long-term reliability in compact enclosures.

Availability

SPS02N60C3 is available at Aetrix Electronics and suitable for AC-DC adapters, LED driver PFC stages, and industrial auxiliary power supplies requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for SPS02N60C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

SPS02N60C3 belongs to the MDmesh™ C3 superjunction MOSFET product line, engineered specifically for high-efficiency, high-voltage SMPS applications where low gate charge, fast switching, and avalanche ruggedness are critical design requirements.

FAQ

What is the maximum recommended gate-source voltage for SPS02N60C3?

The absolute maximum V_GS is ±30 V, but the device is fully enhanced at V_GS = 10 V and specified for reliable operation within –20 V to +25 V. Exceeding ±25 V risks permanent gate oxide damage; typical gate drive uses 12–15 V with active clamping to avoid overshoot beyond 20 V.

Can SPS02N60C3 be used in synchronous rectification?

No - SPS02N60C3 is a high-side N-channel MOSFET optimized for primary-side switching, not secondary-side synchronous rectification. Its body diode is not optimized for low V_SD or fast turn-on; dedicated low-V_DS(on), logic-level N-channel devices (e.g., STP16NF06L) are required for SR applications.

Is the TO-220FP package lead-free and RoHS compliant?

Yes - SPS02N60C3 is manufactured in full compliance with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The TO-220FP package uses matte tin-plated leads and halogen-free molding compound, with peak soldering temperature rated at 260 °C for 10 seconds per JEDEC J-STD-020.

Does SPS02N60C3 require a gate resistor for stability?

Yes - a series gate resistor (typically 10–47 Ω) is mandatory to dampen parasitic oscillation caused by gate-drain capacitance (Crss) and PCB trace inductance. Without it, ringing can exceed V_GS ratings and cause erratic switching or device failure, especially at high dV/dt edges (>10 V/ns) in QR or LLC topologies.

SPS02N60C3 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-251-3 Stub Leads, IPAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 1.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 12.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3-11

SPS02N60C3 FAQ

1.How can I place an order for SPS02N60C3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPS02N60C3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPS02N60C3 reliable?

The price and inventory of SPS02N60C3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPS02N60C3 is usually 5 days.

3.What payment methods are accepted for SPS02N60C3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPS02N60C3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPS02N60C3?

SPS02N60C3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPS02N60C3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPS02N60C3?

For technical support, including SPS02N60C3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPS02N60C3 requirements.

6.How does Aetrix verify that SPS02N60C3 is sourced from the original manufacturer or authorized distributors?

All SPS02N60C3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPS02N60C3 meets industry standards.

7.What is the process for return or replacement of SPS02N60C3?

All SPS02N60C3 units undergo pre-shipment inspection (PSI). If there is an issue with SPS02N60C3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPS02N60C3 part is unused and in its original packaging.

Return procedure for SPS02N60C3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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