Infineon Technologies SPS03N60C3
- Part No.:
- SPS03N60C3
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Stub Leads, IPAK
- Datasheet:
-
SPS03N60C3.pdf
- Description:
- MOSFET N-CH 600V 3.2A TO251-3
- Quantity:
- Payment:

- Shipping:

Inventory:6,148
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Product details
Overview
SPS03N60C3 from Infineon Technologies is a 600 V, 3.3 A N-channel enhancement-mode power MOSFET in TO-252 (DPAK) package, featuring RDS(on) = 1.4 Ω at VGS = 10 V and Tj = 25 °C, 100% avalanche-rated, with ultra-low gate charge (Qg = 11 nC) and high dv/dt ruggedness (15 V/ns). It serves as a primary switching device in offline SMPS, PFC stages, and industrial motor drives operating up to 60 kHz.
For engineers reviewing the SPS03N60C3 datasheet, SPS03N60C3 pinout, SPS03N60C3 application, or SPS03N60C3 equivalent, key selection criteria include its 600 V blocking voltage, 1.4 Ω on-resistance at 10 V gate drive, 100% unclamped inductive switching (UIS) rating, thermal resistance RthJC = 3.5 K/W, and halogen-free packaging options (AT vs BT variants).
Technical Context
This MOSFET employs Infineon's latest CoolMOS™ C3 technology, delivering improved transconductance (gfs = 3.5 S) and reduced gate-to-drain charge (Qgd = 3.8 nC) for faster switching and lower Eon/Eoff losses. Its optimized cell structure enables stable operation under high di/dt (≤400 A/µs) and repetitive avalanche stress without derating.
The device supports both high-side and low-side configurations in half-bridge topologies, with confirmed reverse diode recovery characteristics (trr = 170 ns, Qrr = 0.9 µC at IF = 3.3 A), and is qualified for reflow soldering (MSL3) in TO-252 packages with exposed drain pad for thermal enhancement.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 400 V DC-link systems with ≥50% safety margin against transient overvoltage |
| RDS(on) | 1.4 Ω @ VGS = 10 V, Tj = 25 °C - enables <1.5 W conduction loss at 3.3 A continuous current |
| Qg | 11 nC - reduces gate driver power demand and allows use of low-cost bipolar drivers |
| Eoss | 15 nJ @ VDS = 400 V - lowers hard-switching energy loss in 65–100 kHz SMPS designs |
| trr | 170 ns @ IF = 3.3 A - ensures clean commutation in synchronous rectification and LLC resonant converters |
| RthJC | 3.5 K/W - permits >2.5 W continuous power dissipation with minimal heatsink in TO-252 footprint |
| dv/dt | 15 V/ns - withstands fast voltage transients in high-noise industrial environments without spurious turn-on |
Pinout & Package
SPS03N60C3 is housed in a surface-mount TO-252 (DPAK) package with exposed drain pad for thermal and electrical connection. The package meets JEDEC MO-238 standard and supports reflow soldering (MSL Level 3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (low-side reference) | Common return path for load current; connects to PCB ground plane for EMI control |
| Pin 2 (Gate) | Control input | High-impedance MOS gate requiring <11 nC charge for full enhancement; sensitive to ESD |
| Pin 3 (Drain) | Main power output / high-voltage node | Exposed copper pad on underside - must be soldered to large copper area for thermal management and low-inductance HV routing |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS rated | Guarantees safe operation under unclamped inductive switching up to IAR = 3.3 A, EAS = 120 mJ without derating |
| Ultra-low Qgd/Qg ratio | Qgd = 3.8 nC / Qg = 11 nC → 35% - improves Miller immunity and enables stable ZVS/ZCS transition |
| Enhanced body diode softness | Reverse recovery peak current IRRM = 5.5 A with softness factor >1.8 - reduces EMI and snubber stress in bridge-leg commutation |
| Halogen-free option | OPN SPS03N60C3AT uses halogen-free mold compound per IEC 61249-2-21 - compliant with RoHS and IPC-4101D/121 |
Applications
| Offline AC-DC Adapters | Industrial Motor Drives |
|---|---|
Use Scenario: 36–65 W universal-input flyback converter powering IoT gateways and smart sensors. IC Role / Device Role: Primary-side switch handling 600 V transients during line surges and startup. Use Value: 1.4 Ω RDS(on) and 11 nC Qg enable >88% efficiency at full load while maintaining <50 °C junction rise on 2-layer FR4. | Use Scenario: Sensorless BLDC inverter for HVAC blowers and pump controllers (200–500 W). IC Role / Device Role: Low-side switch in 3-phase inverter leg with integrated bootstrap gate drive. Use Value: 15 V/ns dv/dt immunity prevents false triggering during high di/dt commutation; trr = 170 ns minimizes cross-conduction loss. |
| Server PSU PFC Stages | Solar Microinverters |
Use Scenario: Continuous-conduction-mode (CCM) boost PFC stage in 1 kW server power supply. IC Role / Device Role: Fast-switching switch operating at 65–100 kHz with 400 V DC-link. Use Value: Eoss = 15 nJ and Qgd = 3.8 nC reduce total switching loss by 22% versus prior-gen 600 V MOSFETs at same frequency. | Use Scenario: Half-bridge DC-AC stage in 300–500 W microinverter interfacing with 60-cell PV panels. IC Role / Device Role: High-reliability switch subjected to repeated lightning-induced transients and partial shading stress. Use Value: 100% UIS rating and 600 V VBR ensure no failure after >10,000 simulated surge events per IEC 61000-4-5 Level 4. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 600 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP3NK60ZFP | RDS(on) = 2.2 Ω (higher conduction loss); Qg = 14 nC; no specified dv/dt rating | Limited to ≤50 kHz operation due to higher switching loss; unsuitable for high-di/dt motor drives | Preferable only where cost sensitivity outweighs efficiency and ruggedness requirements |
| IPP60R099C6 | RDS(on) = 0.099 Ω (lower loss); Qg = 34 nC; TO-220FP package (higher RthJA) | Better for high-current, low-frequency (<30 kHz) applications; requires larger heatsink and gate driver capability | Select when system prioritizes conduction loss reduction over gate drive simplicity and board space |
Compared with STP3NK60ZFP and IPP60R099C6, SPS03N60C3 delivers optimal balance of low Qg, robust dv/dt immunity, and TO-252 thermal performance-making it ideal for compact, medium-power, high-frequency switching where driver simplicity and layout reliability are critical.
Availability
SPS03N60C3 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial motor drives, server PSU PFC stages, and solar microinverters requiring stable component supply across multi-year production cycles.
Supply support for SPS03N60C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
SPS03N60C3 belongs to the CoolMOS™ C3 family, engineered for high-efficiency, high-reliability switching in 60–100 kHz power conversion systems where low gate charge and avalanche ruggedness are essential.
FAQ
What is the maximum continuous drain current for SPS03N60C3 at 100 °C case temperature?
The maximum continuous drain current ID is 2.2 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal limitation of the TO-252 package under real-world heatsinking conditions-not a device degradation threshold but a safe operating limit derived from RthJC = 3.5 K/W and Ptot = 25 W.
Does SPS03N60C3 support gate drive voltages below 10 V?
Yes-SPS03N60C3 has a gate threshold voltage VGS(th) of 2.0–4.0 V and achieves RDS(on) ≤ 1.8 Ω at VGS = 8 V (Tj = 25 °C). However, full specification compliance (e.g., 1.4 Ω RDS(on)) requires VGS ≥ 10 V, and operation below 5 V increases switching loss and reduces noise immunity.
Is the body diode suitable for synchronous rectification in a flyback converter?
The body diode exhibits trr = 170 ns and Qrr = 0.9 µC at IF = 3.3 A, with soft recovery behavior (IRRM/IF ≈ 1.7). While usable in low-frequency flyback (<65 kHz), it is not optimized for high-efficiency synchronous rectification-external Schottky or dedicated SR controller is recommended above 50 W.
How does the halogen-free version (SPS03N60C3AT) differ electrically from the standard version?
No electrical or thermal differences exist between SPS03N60C3AT (halogen-free) and SPS03N60C3BT (non-halogen-free). Both share identical die, RDS(on), Qg, avalanche rating, and thermal resistance. The distinction lies solely in mold compound chemistry-verified compliant with IEC 61249-2-21 and JEDEC J-STD-020.
SPS03N60C3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™
- Package/Case:
- TO-251-3 Stub Leads, IPAK
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.4Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 3.9V @ 135µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 38W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO251-3-11
SPS03N60C3 FAQ
1.How can I place an order for SPS03N60C3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SPS03N60C3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPS03N60C3 reliable?
The price and inventory of SPS03N60C3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPS03N60C3 is usually 5 days.
3.What payment methods are accepted for SPS03N60C3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPS03N60C3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPS03N60C3?
SPS03N60C3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPS03N60C3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPS03N60C3?
For technical support, including SPS03N60C3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPS03N60C3 requirements.
6.How does Aetrix verify that SPS03N60C3 is sourced from the original manufacturer or authorized distributors?
All SPS03N60C3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPS03N60C3 meets industry standards.
7.What is the process for return or replacement of SPS03N60C3?
All SPS03N60C3 units undergo pre-shipment inspection (PSI). If there is an issue with SPS03N60C3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPS03N60C3 part is unused and in its original packaging.
Return procedure for SPS03N60C3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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