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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPU11N10

Name: SPU11N10
Brand: Infineon Technologies
SKU: SPU11N10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPU11N10

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: SPU11N10.pdf

Description:: MOSFET N-CH 100V 10.5A TO251-3

Quantity:: RFQ Add To RFQ list

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Inventory:2,741

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Product details

Overview

SPU11N10 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET rated for 100 V drain-source voltage, 10.5 A continuous drain current at 25°C, and 170 mΩ maximum R_DS(on) at V_GS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and operates up to 175°C - deployed in DC-DC converters, motor control stages, and industrial power switching circuits.

For engineers reviewing the SPU11N10 datasheet, SPU11N10 pinout, SPU11N10 application, or SPU11N10 equivalent, key selection criteria include its P-TO251 package thermal resistance (R_thJC = 3 K/W), gate charge profile (Q_g = 14.6–18.3 nC), reverse diode forward voltage (V_SD = 0.93–1.25 V), and safe operating area under pulsed conditions.

Technical Context

This MOSFET employs a planar SIPMOS™ process optimized for ruggedness and fast switching in hard-switched topologies. Its 100 V V_(BR)DSS supports 48 V bus systems with margin, while the 175°C T_jmax enables high-temperature operation in enclosed industrial enclosures without derating penalties.

The device integrates a monolithic body diode with t_rr = 57–71 ns and Q_rr = 134–167 nC, enabling efficient synchronous rectification and freewheeling in buck and half-bridge configurations. Gate threshold voltage (V_GS(th) = 2.1–4 V) ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V nominal input rails with ≥100 % overvoltage margin for surge immunity
R_DS(on) max	170 mΩ at V_GS = 10 V, I_D = 7.8 A - determines conduction loss in high-current switching paths
I_D cont	10.5 A at T_C = 25°C - defines maximum steady-state load current with heatsink
E_AS	60 mJ single-pulse avalanche energy - enables robustness against inductive switching transients
dv/dt rating	6 kV/µs - prevents spurious turn-on during fast voltage transitions in high-noise environments
Q_g	14.6–18.3 nC - sets gate drive power requirement and switching speed trade-off
V_GS(th)	2.1–4 V - compatible with 3.3 V microcontroller GPIO or dedicated gate drivers

Pinout & Package

P-TO251 package: 3-pin single-ended leaded plastic package with isolated tab (drain-connected). Optimized for PCB mounting with low thermal resistance (R_thJC = 3 K/W) and mechanical stability in vibration-prone environments.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path or ground plane
Pin 2 (Gate)	Control terminal	High-impedance input requiring <100 nA leakage; driven via series resistor for EMI control
Pin 3 (Drain)	Power output terminal	Internally connected to exposed metal tab; must be electrically isolated from heatsink unless referenced to system ground

Key Features

Feature	Design Value
Avalanche-rated operation	60 mJ single-pulse energy handling - eliminates need for external snubbers in inductive load switching
High-temperature capability	175°C maximum junction temperature - enables use in sealed enclosures without forced air cooling
Fast body diode	t_rr = 57–71 ns, Q_rr = 134–167 nC - reduces switching losses and voltage overshoot in freewheeling paths
dv/dt immune design	6 kV/µs rated - suppresses false triggering in high-dV/dt motor drive or SMPS applications
Low gate charge	Q_g ≤ 18.3 nC - allows efficient driving with low-power gate drivers (e.g., 1 A peak)

Applications

Industrial Motor Control

DC-DC Converters

Use Scenario: Half-bridge driver for 24–48 V BLDC motor controllers in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg; handles 10.5 A continuous phase current with <170 mΩ on-resistance.

Use Value: Avalanche rating absorbs back-EMF spikes during commutation; 175°C rating sustains operation in unventilated control cabinets.

Use Scenario: Synchronous rectifier in 48 V input, 12 V output isolated flyback converter for telecom power supplies.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: Body diode t_rr < 71 ns minimizes reverse recovery loss; R_DS(on) reduces conduction loss vs. 40 V Schottky alternatives.

Uninterruptible Power Supplies

LED Driver Circuits

Use Scenario: Battery disconnect switch and inverter stage in 48 V UPS systems with battery backup.

IC Role / Device Role / Timing Role: High-side or low-side main power switch; subjected to repeated surge currents during transfer events.

Use Value: 41.2 A pulsed current rating and 60 mJ avalanche energy ensure reliability during grid-fail transitions.

Use Scenario: Constant-current switch in high-brightness LED string drivers for street lighting.

IC Role / Device Role / Timing Role: PWM-controlled current regulator; switched at 1–10 kHz with 10.5 A peak load current.

Use Value: Low R_DS(on) maintains efficiency >95 % at full load; TO251 package simplifies thermal management on FR4 PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPBF	R_DS(on) = 44 mΩ @ V_GS = 10 V (lower), V_DS = 100 V (same), but no avalanche rating specified	Lacks documented E_AS rating - unsuitable for inductive switching without external protection	Prefer when lower conduction loss is critical and circuit includes clamping diodes or snubbers
STP12NK100Z	V_DS = 1000 V (higher), R_DS(on) = 1.2 Ω (much higher), avalanche rated, TO-220 package	Designed for high-voltage AC mains applications - excessive voltage rating adds cost and capacitance	Only consider if system requires >600 V blocking; otherwise over-specified and inefficient at 48 V

Compared with IRF540NPBF and STP12NK100Z, the SPU11N10 uniquely balances 100 V rating, 170 mΩ R_DS(on), certified avalanche robustness, and TO251 thermal performance - making it optimal for compact, thermally constrained 48 V industrial power stages where reliability under transient stress is mandatory.

Availability

SPU11N10 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC conversion, uninterruptible power supplies, and LED driver circuits requiring stable component supply and long-term lifecycle support.

Supply support for SPU11N10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification (CECC-approved).

The SIPMOS™ product line delivers rugged, high-reliability power MOSFETs for industrial switching applications - engineered for avalanche endurance, high-temperature operation, and consistent parametric stability across wide temperature ranges.

FAQ

Is the SPU11N10 pin-compatible with the SPD11N10?

Yes - both share identical P-TO251 packaging, pinout (source-gate-drain), and marking layout. The SPU11N10 is the production version of the preliminary SPD11N10; electrical specifications remain unchanged per Infineon's final datasheet revision.

What is the maximum recommended gate resistor value for 100 kHz switching?

For 100 kHz operation with typical gate drive strength (±1 A), a 10 Ω series gate resistor balances switching speed (t_r/t_f ≈ 50 ns) and EMI suppression. Higher values (>22 Ω) increase switching losses; lower values (<4.7 Ω) risk ringing due to gate loop inductance.

Does the body diode support continuous conduction mode (CCM) in synchronous rectification?

Yes - the integrated body diode supports continuous forward current up to 10.5 A at T_C = 25°C and has characterized reverse recovery (t_rr = 57–71 ns, Q_rr = 134–167 nC), enabling use in CCM flyback and forward converters with appropriate gate timing.

Can the SPU11N10 be mounted directly to a heatsink without isolation?

No - the drain is internally connected to the exposed metal tab. Electrical isolation (e.g., mica washer + thermal paste or isolating pad) is required unless the heatsink is referenced to the drain potential in the circuit topology.

SPU11N10 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 10.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 170mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 21µA

Gate Charge (Qg) (Max) @ Vgs:: 18.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: P-TO251-3-1

SPU11N10 FAQ

1.How can I place an order for SPU11N10 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPU11N10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPU11N10 reliable?

The price and inventory of SPU11N10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPU11N10 is usually 5 days.

3.What payment methods are accepted for SPU11N10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPU11N10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPU11N10?

SPU11N10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPU11N10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPU11N10?

For technical support, including SPU11N10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPU11N10 requirements.

6.How does Aetrix verify that SPU11N10 is sourced from the original manufacturer or authorized distributors?

All SPU11N10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPU11N10 meets industry standards.

7.What is the process for return or replacement of SPU11N10?

All SPU11N10 units undergo pre-shipment inspection (PSI). If there is an issue with SPU11N10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPU11N10 part is unused and in its original packaging.

Return procedure for SPU11N10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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