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Infineon Technologies SPU30N03S2L-10
- Part No.:
- SPU30N03S2L-10
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
SPU30N03S2L-10.pdf
- Description:
- MOSFET N-CH 30V 30A TO251-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,230
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Product details
Overview
SPU30N03S2L-10 from Infineon Technologies is an N-channel logic-level power MOSFET in P-TO251 package, rated for 30 V VDS, 30 A continuous drain current at TC = 25 °C, and 10 mΩ RDS(on) at VGS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature-designed for high-efficiency DC-DC converters and motor control stages in industrial power supplies.
For engineers reviewing the SPU30N03S2L-10 datasheet, SPU30N03S2L-10 pinout, SPU30N03S2L-10 application, or SPU30N03S2L-10 equivalent, key selection criteria include its low gate charge × RDS(on) figure of merit (31.5–39.4 nC × 10 mΩ), robust unclamped inductive switching performance (150 mJ EAS), and thermal resistance of 1.8 K/W (junction-to-case).
Technical Context
This MOSFET employs Infineon's OptiMOS™ process to achieve enhanced conduction and switching trade-offs. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from 3.3 V or 5 V microcontrollers, while the 10 mΩ RDS(on) at 10 V and 30 A ensures minimal conduction loss in high-current synchronous rectification and half-bridge configurations.
The device integrates a fast, low-Qrr body diode (26.5–40 nC reverse recovery charge, 25.5–38 ns trr) and supports high dv/dt operation (6 kV/µs), making it suitable for hard-switched topologies where diode commutation and voltage transients are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 24 V nominal bus systems with margin |
| RDS(on) @ VGS = 10 V | 10 mΩ (max) - Enables ≤3 W conduction loss at 30 A, reducing heatsink requirements |
| ID (continuous) | 30 A @ TC = 25 °C - Supports high-current load switching without derating at ambient PCB mounting |
| EAS | 150 mJ - Withstands single-pulse inductive energy in motor drive freewheeling paths |
| Qg | 31.5–39.4 nC - Low total gate charge enables efficient 500 kHz+ switching with moderate gate driver strength |
| RthJC | 1.8 K/W - Allows direct thermal coupling to heatsink via case, enabling >60 W power dissipation at ΔT = 100 K |
| tr/tf | 63–94 ns / 17–26 ns - Fast edge rates support high-frequency PWM with reduced switching losses |
Pinout & Package
SPU30N03S2L-10 uses the P-TO251 (IPAK) surface-mount package with three terminals: Drain (D), Source (S), and Gate (G). The drain is internally connected to the exposed metal tab for low-inductance, high-current path and thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current sink and thermal interface | Electrically and thermally coupled to PCB copper pour; requires solder mask opening and thermal vias for optimal RthJA |
| Source | Reference node for gate drive and current return | Low-inductance connection essential for stable gate control during fast dI/dt transitions |
| Gate | Control electrode for channel modulation | Logic-compatible input (VGS(th) = 1.2–2.0 V); requires <5.4 Ω series resistance to damp ringing per datasheet test condition |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V, eliminating need for level-shifting in 3.3 V MCU-based designs |
| Avalanche-rated | Guaranteed 150 mJ single-pulse energy handling without failure-critical for inductive load interruption |
| Low Qgd/Qg ratio | Qgd = 10.8–16.2 nC (34–41% of Qg) - Reduces Miller-induced shoot-through risk in bridge configurations |
| High dv/dt immunity | Rated 6 kV/µs - Maintains reliable turn-off under fast-rising bus transients common in automotive and industrial inverters |
| 175 °C Tj(max) | Enables operation in sealed enclosures or high-ambient environments without forced air cooling |
Applications
| Motor Drive Half-Bridge | DC-DC Synchronous Rectifier |
|---|---|
Use Scenario: High-side/low-side switching in 24 V BLDC motor controllers with PWM up to 20 kHz. IC Role / Device Role / Timing Role: Power switch in half-bridge leg; handles bidirectional current during PWM commutation and regenerative braking. Use Value: Low RDS(on) minimizes I²R loss during 30 A peak phase current; fast tf reduces cross-conduction overlap time. | Use Scenario: Secondary-side synchronous rectification in isolated 24 V output, 100 W flyback or LLC converters. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward voltage drop and improve efficiency at light-to-full load. Use Value: VSD = 0.9–1.2 V at 30 A enables >2 % efficiency gain over 40 V Schottky; low Qrr prevents reverse recovery spikes. |
| Industrial Power Supply Switch | Hot-Swap OR-ing FET |
Use Scenario: Main switching FET in 24 V input, 12 V output buck converter for programmable logic controllers (PLCs). IC Role / Device Role / Timing Role: High-current, high-duty-cycle power switch operating continuously at 30 A DC. Use Value: RthJC = 1.8 K/W allows direct heatsink mounting; 175 °C rating supports operation in 70 °C ambient cabinet environments. | Use Scenario: OR-ing FET in redundant 24 V power distribution for network switches and base stations. IC Role / Device Role / Timing Role: Reverse-polarity and fault-isolation switch with fast turn-on/turn-off for seamless source switchover. Use Value: Logic-level VGS(th) enables simple gate control from supervisor IC; avalanche rating protects against load-dump transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF3708PBF | RDS(on) = 13 mΩ @ 10 V; higher Qg (42 nC); TO-220 package | Larger footprint and higher RthJA; less suitable for compact SMD layouts | Prefer when through-hole mounting or legacy board compatibility required |
| STP30NF03L | RDS(on) = 12 mΩ @ 10 V; lower EAS (100 mJ); same P-TO251 package | Reduced avalanche ruggedness limits use in high-energy inductive loads | Acceptable for non-avalanche-critical DC-DC but not motor drive freewheeling |
Compared with IRF3708PBF and STP30NF03L, SPU30N03S2L-10 delivers superior thermal performance (1.8 K/W vs. ~2.5 K/W), higher avalanche energy margin (150 mJ vs. ≤100 mJ), and tighter RDS(on) tolerance-making it optimal for space-constrained, high-reliability industrial power stages.
Availability
SPU30N03S2L-10 is available at Aetrix Electronics and suitable for industrial motor drives, 24 V DC-DC converters, and hot-swap OR-ing circuits requiring stable component supply and long-term manufacturability.
Supply support for SPU30N03S2L-10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and manufacturing infrastructure.
This device belongs to the OptiMOS™ logic-level power MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial and embedded power conversion systems where thermal robustness and gate-drive simplicity are critical.
FAQ
What is the maximum safe operating temperature for SPU30N03S2L-10?
The absolute maximum junction temperature is +175 °C, and the device is rated for continuous operation across –55 °C to +175 °C. Thermal design must ensure Tj remains below this limit under worst-case power dissipation and ambient conditions, using the specified RthJC = 1.8 K/W and appropriate heatsinking.
Can SPU30N03S2L-10 be driven directly by a 3.3 V microcontroller GPIO?
Yes-the gate threshold voltage ranges from 1.2 V to 2.0 V, and the device achieves full enhancement (RDS(on) ≤ 14.6 mΩ) at VGS = 4.5 V. A 3.3 V output can partially enhance it, but for guaranteed low RDS(on), a dedicated gate driver or level shifter is recommended for VGS ≥ 4.5 V operation.
Does SPU30N03S2L-10 have integrated ESD protection on the gate?
No explicit ESD protection structure is documented in the datasheet. The gate-source leakage current is specified as ≤100 nA at VGS = 20 V, and standard handling precautions-including current-limiting gate resistors and transient suppression-are required to prevent electrostatic damage during assembly and operation.
How does the body diode performance compare to discrete Schottky diodes?
The integrated body diode has VSD = 0.9–1.2 V at 30 A and trr = 25.5–38 ns, offering lower forward drop than 40 V Schottkys at high current but slower recovery than ultrafast SiC Schottkys. It is optimized for synchronous rectification-not high-frequency resonant or zero-voltage-switching topologies requiring sub-10 ns trr.
SPU30N03S2L-10 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 39.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1460 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 82W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- P-TO251-3-1
SPU30N03S2L-10 FAQ
1.How can I place an order for SPU30N03S2L-10 through Aetrix?
Please submit a Request for Quotation (RFQ) for SPU30N03S2L-10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPU30N03S2L-10 reliable?
The price and inventory of SPU30N03S2L-10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPU30N03S2L-10 is usually 5 days.
3.What payment methods are accepted for SPU30N03S2L-10?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPU30N03S2L-10 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPU30N03S2L-10?
SPU30N03S2L-10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPU30N03S2L-10 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPU30N03S2L-10?
For technical support, including SPU30N03S2L-10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPU30N03S2L-10 requirements.
6.How does Aetrix verify that SPU30N03S2L-10 is sourced from the original manufacturer or authorized distributors?
All SPU30N03S2L-10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPU30N03S2L-10 meets industry standards.
7.What is the process for return or replacement of SPU30N03S2L-10?
All SPU30N03S2L-10 units undergo pre-shipment inspection (PSI). If there is an issue with SPU30N03S2L-10, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPU30N03S2L-10 part is unused and in its original packaging.
Return procedure for SPU30N03S2L-10:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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