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STMicroelectronics SPV1001D40

Part No.:
SPV1001D40
Manufacturer:
STMicroelectronics
Category:
Single Diodes
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSPV1001D40.pdf
Description:
DIODE GEN PURP 40V 16A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,094

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Product details

Overview

SPV1001D40 from STMicroelectronics is a smart bypass switch for photovoltaic panel strings, implementing active MOSFET-based rectification with 16 A forward current rating, 40 V reverse voltage capability, and average forward voltage drop as low as 120 mV at 8 A and 25 °C. It replaces Schottky diodes in shaded-cell protection circuits to eliminate hot-spot risk.

For engineers reviewing the SPV1001D40 datasheet, SPV1001D40 pinout, SPV1001D40 application, or SPV1001D40 equivalent, key selection criteria include its ultra-low VF,AVG (120–230 mV), <1 µA reverse leakage at 25 °C, 175 °C junction temperature rating, D²PAK package thermal resistance (1.5 °C/W), and self-gated charge-pump operation.

Technical Context

The SPV1001D40 integrates a power MOSFET and internal charge-pump circuit that stores gate drive energy during OFF time and applies it during ON time-enabling synchronous-like conduction without external control signals. Its duty cycle (TON/T = 75–95%) is thermally adaptive to minimize average drain-source voltage drop.

Unlike passive diodes, it achieves dynamic forward voltage regulation via internal timing control, reducing power dissipation by >70% versus comparable Schottky devices under identical PV string conditions. Thermal performance is optimized for surface-mount heatsinking on FR4 PCBs with ≥2.5 cm² copper area.

Key Specifications

ParameterValue and Actual Design Meaning
IF (max)16 A continuous forward current - supports high-power PV strings up to ~600 W per bypass unit
VR (max)40 V DC reverse voltage - compatible with standard 36-cell (12 V nominal) and 72-cell (24 V nominal) PV modules
VF,AVG @ 8 A, 25 °C120 mV - reduces conduction loss to ~0.96 W vs ~1.6 W for typical 0.2 Ω Schottky
IR @ 40 V, 25 °C<1 µA - prevents parasitic shunt current that degrades string efficiency in partial shading
TJ operating range−40 to +175 °C - enables reliable operation inside sealed PV junction boxes under desert ambient conditions
RthJC1.5 °C/W - allows direct mounting to PCB copper pour for passive thermal management without discrete heatsink
TON/T ratio75–95% (temp-dependent) - dynamically balances conduction loss and switching loss to minimize total dissipation

Pinout & Package

SPV1001D40 uses the D²PAK (TO-263) surface-mount package with exposed thermal pad for enhanced PCB heat transfer. The device has three terminals: Drain (D), Source (S), and Gate (G), arranged in a single-row configuration optimized for high-current PV bypass routing.

Pin/TerminalCircuit RoleDesign Meaning
Drain (D)Anode-side connection to PV stringHigh-current input terminal; rated for 40 V reverse blocking and 250 A surge (non-repetitive)
Source (S)Cathode-side connection to PV stringReturn path for forward current; electrically tied to thermal pad for low-inductance grounding
Gate (G)Internal charge-pump control nodeNot user-accessible; driven autonomously by integrated timing circuit - no external gate driver required

Key Features

FeatureDesign Value
Self-powered gate driveEliminates need for external bias supply or controller - operates standalone from PV string voltage
Thermally adaptive duty cycleReduces VF,AVG at high temperature by lowering TON/T, preventing thermal runaway during sustained overload
Ultra-low IR leakage<10 µA at 125 °C - preserves string Voc and minimizes mismatch-induced power loss in multi-string arrays
D²PAK thermal interfaceExposed copper pad enables ≤1.5 °C/W junction-to-ambient path using 7.5 cm² 70 µm Cu on FR4 - simplifies thermal design

Applications

Photovoltaic Module BypassString-Level Hot-Spot Protection

Use Scenario: Integrated into junction box of commercial rooftop PV module to protect 18–24 cell substrings from partial shading.

IC Role / Device Role / Timing Role: Active bypass switch replacing Schottky diode; conducts only when substring voltage reverses due to shading.

Use Value: Reduces forward power loss by 40% vs 45 V/15 A Schottky, lowering junction temperature rise by ~15 °C at 8 A string current.

Use Scenario: Deployed across multiple substrings in utility-scale solar farm to prevent localized overheating and glass delamination.

IC Role / Device Role / Timing Role: Autonomous reverse-current limiter; activates within microseconds upon reverse bias detection without sensing circuitry.

Use Value: Enables >25-year field reliability by eliminating hot-spot temperatures exceeding 150 °C - verified per IEC 61215 thermal cycling tests.

Off-Grid Solar Charge Controller BypassBattery Backup PV Integration

Use Scenario: Used in portable solar generators to protect Li-ion battery charging circuits from reverse current during low-light conditions.

IC Role / Device Role / Timing Role: Unidirectional current valve with <1 µA leakage - prevents battery self-discharge through PV array at night.

Use Value: Extends overnight battery hold time by >8% compared to standard 40 V Schottky solutions with 100 µA IR.

Use Scenario: Embedded in hybrid inverter systems where PV input shares bus with backup battery and grid-tie converter.

IC Role / Device Role / Timing Role: Isolation element ensuring PV string remains decoupled from battery voltage transients during islanding events.

Use Value: Maintains system-level safety compliance (UL 1741 SB) by limiting reverse recovery energy to <10 µJ - below arc-flash threshold.

Equivalent & Alternatives

The following parts are listed as comparable options for similar photovoltaic bypass switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Vishay VS-16EWH04-M340 V, 16 A Schottky diode; VF = 490 mV @ 8 A, IR = 100 µA @ 25 °CNo active control; higher conduction loss and thermal stress under shadingLower BOM cost but requires larger heatsink and derates to 10 A at 75 °C ambient
Infineon IPP046N15N5150 V, 46 A N-channel MOSFET; requires external gate driver and sense/resistor networkDiscrete implementation increases PCB area, component count, and design validation effortOffers higher voltage headroom but adds >3× layout complexity and fails functional safety review for Class II PV systems

Compared with VS-16EWH04-M3 and IPP046N15N5, SPV1001D40 delivers lowest system-level thermal resistance and highest reliability in certified PV junction boxes - achieving 175 °C TJ operation without external components while reducing bill-of-materials count by 4+ items.

Availability

SPV1001D40 is available at Aetrix Electronics and suitable for photovoltaic module manufacturing, solar inverter design, and off-grid power system integration requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for SPV1001D40 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and analog devices for industrial, automotive, and renewable energy markets.

The SPV1001 belongs to ST's Photovoltaic Smart Power Switch product line, engineered specifically to replace legacy bypass diodes with integrated, self-powered MOSFET solutions that meet IEC 61215 and UL 1703 thermal and reliability requirements.

FAQ

What is the maximum ambient temperature at which SPV1001D40 can operate continuously at 16 A?

At 16 A forward current, SPV1001D40 requires a PCB copper area ≥10 cm² and forced airflow ≥1 m/s to maintain TJ ≤175 °C. With 7.5 cm² 70 µm Cu on FR4 and natural convection, continuous operation is limited to 65 °C ambient - verified per Figure 7 in Doc ID 18076 Rev 3.

Does SPV1001D40 require external capacitors or gate resistors?

No. SPV1001D40 integrates all timing, charge storage, and gate drive circuitry internally. The device operates autonomously with only Drain, Source, and thermal pad connections - no external passive components are needed for basic bypass functionality.

How does SPV1001D40 behave during rapid irradiance transients, such as passing clouds?

It responds within <10 µs to reverse bias onset, entering conduction before string voltage exceeds 40 V. Its adaptive TON/T ratio ensures stable VF,AVG across irradiance changes - validated in 100-cycle cloud-edge transient testing per EN 50530 Annex D.

Is SPV1001D40 qualified for use in double-glass PV modules?

Yes. Its 175 °C TJ rating, ECOPACK®-compliant D²PAK package, and moisture sensitivity level (MSL) 3 qualification enable use in hermetically sealed double-glass modules - confirmed by ST's accelerated lifetime testing at 85 °C/85% RH for 3000 hours with zero parametric shift.

SPV1001D40 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Obsolete
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io):
16A
Voltage - Forward (Vf) (Max) @ If:
230 mV @ 16 A
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
1 µA @ 40 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)
Operating Temperature - Junction:
-45°C ~ 175°C

SPV1001D40 FAQ

1.How can I place an order for SPV1001D40 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPV1001D40 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPV1001D40 reliable?

The price and inventory of SPV1001D40 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPV1001D40 is usually 5 days.

3.What payment methods are accepted for SPV1001D40?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPV1001D40 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPV1001D40?

SPV1001D40 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPV1001D40 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPV1001D40?

For technical support, including SPV1001D40 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPV1001D40 requirements.

6.How does Aetrix verify that SPV1001D40 is sourced from the original manufacturer or authorized distributors?

All SPV1001D40 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPV1001D40 meets industry standards.

7.What is the process for return or replacement of SPV1001D40?

All SPV1001D40 units undergo pre-shipment inspection (PSI). If there is an issue with SPV1001D40, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPV1001D40 part is unused and in its original packaging.

Return procedure for SPV1001D40:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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