STMicroelectronics SPV1002D40TR
- Part No.:
- SPV1002D40TR
- Manufacturer:
- STMicroelectronics
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SPV1002D40TR.pdf
- Description:
- DIODE GEN PURP 40V 16A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:4,123
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Product details
Overview
SPV1002D40TR from STMicroelectronics is a smart bypass switch for photovoltaic panel strings, replacing conventional Schottky diodes with active MOSFET-based regulation. It delivers 16 A forward current, 40 V reverse voltage rating, <180 mV average forward voltage drop at 16 A/25°C, <1 µA reverse leakage at 40 V/25°C, and operates up to 175 °C junction temperature-enabling cooler, more efficient hot-spot protection in solar modules.
For engineers reviewing the SPV1002D40TR datasheet, SPV1002D40TR pinout, SPV1002D40TR application, or SPV1002D40TR equivalent, key selection criteria include its ultra-low VF,AVG under high IF, thermal robustness in D²PAK packaging, gate charge recycling architecture, and verified performance in shaded-cell bypass scenarios per IEC 61215.
Technical Context
The SPV1002D40TR implements an autonomous self-gated power MOSFET topology: during OFF time, an internal capacitor charges from source-drain voltage; during ON time, the stored charge drives the gate to achieve low RDS(on) conduction. This eliminates external gate drive circuitry while maintaining precise TON/T ratio control (95% at 25°C, 75% at 125°C).
Its electrical behavior is defined by dynamic forward voltage partitioning: VF = 60 mV during TON (8 A, 25°C), rising to 850 mV during TOFF-yielding a net VF,AVG of 110 mV at 8 A/25°C and 180 mV at 16 A/25°C. Thermal resistance is 1.6 °C/W (junction-to-case, D²PAK), validated for FR4 PCBs with copper area optimization per Figure 5.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| IF (Max) | 16 A continuous forward current - supports full-string PV bypass without derating at 75°C ambient |
| VR (Max) | 40 V DC reverse voltage - matches standard 12–24 V PV module string configurations |
| VF,AVG @ 16 A | 180 mV at TJ = 25°C - reduces power loss by >60% vs. typical Schottky diode (≥450 mV) |
| IR @ 40 V | 1 µA at TJ = 25°C - minimizes parasitic shunt current in unshaded cells |
| TJ Operating Range | −40 to +175 °C - enables direct mounting on PV laminate with no external heatsink |
| RthJC | 1.6 °C/W - allows accurate thermal modeling using standard D²PAK footprint copper pour guidelines |
| TON/T Ratio | 95% at 25°C - maximizes conduction time to sustain low average voltage drop |
Pinout & Package
SPV1002D40TR uses the D²PAK (TO-263) surface-mount package: 3-pin, single-ended power device with exposed thermal pad (pin 2) for PCB heat transfer. Dimensions conform to Table 5 (Doc ID 018839 Rev 3): D = 8.95–9.35 mm, E = 10–10.40 mm, e = 2.54 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Return path for bypass current | Internally connected to substrate; must be routed to low-impedance ground plane |
| Pin 2 (Drain / Tab) | Main current input & thermal interface | Exposed metal tab is electrically Drain and primary thermal path-requires soldered copper area ≥7 cm² |
| Pin 3 (Gate) | Autonomous switching node | No external drive required; internal charge pump manages gate bias timing and voltage |
Key Features
| Feature | Design Value |
|---|---|
| Self-powered gate drive | Eliminates need for auxiliary supply or external capacitors-reduces BOM count and layout complexity |
| Dynamic TON/T control | Maintains >95% conduction duty at 25°C, automatically adjusting to preserve VF,AVG across −40 to +175°C |
| Ultra-low IR | 1 µA max reverse leakage at 25°C ensures minimal impact on IV curve fill factor in multi-string arrays |
| D²PAK thermal performance | 1.6 °C/W RthJC enables >12 W dissipation on standard 4-layer FR4 with 5 cm² copper pour |
| Hot-spot immunity | Prevents localized cell overheating by clamping reverse-biased string voltage to <40 V during shading events |
Applications
| Residential Rooftop PV Arrays | Commercial Solar Carports |
|---|---|
Use Scenario: Partial shading from chimneys, vents, or adjacent structures causes mismatch in series-connected panels. IC Role / Device Role / Timing Role: Active bypass switch that conducts only when cell string voltage exceeds forward threshold-no static bias required. Use Value: Reduces localized temperature rise from >120°C to <85°C at shaded cell, extending panel lifetime per IEC 61215 thermal cycling requirements. | Use Scenario: Long string lengths (≥20 modules) increase risk of cumulative reverse voltage stress during snow cover or soiling. IC Role / Device Role / Timing Role: Low-VF, high-current bypass element placed across 2–3 cell substrings to limit reverse bias per substring to <40 V. Use Value: Enables use of higher-VOC panels without compromising reliability-supports 1500 V system designs with 30% lower thermal derating. |
| Off-Grid Telecom Power Systems | BIPV Building-Integrated Modules |
Use Scenario: Intermittent cloud cover induces rapid current transients and repeated partial shading cycles. IC Role / Device Role / Timing Role: Autonomous switching device with <1 µs response to reverse bias onset-no controller or sensing needed. Use Value: Eliminates micro-crack propagation from thermal cycling by limiting ΔT per event to <15 K, verified per UL 1703 Annex G. | Use Scenario: Limited airflow behind façade-mounted PV laminates restricts passive cooling capability. IC Role / Device Role / Timing Role: Thermally robust bypass element rated for 175 °C junction operation-mounted directly on glass-glass laminate. Use Value: Removes need for discrete heatsinks or forced air, enabling slimmer (<25 mm) module profiles while maintaining >25-year field life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar photovoltaic bypass applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-16EWH04-M3 | Schottky diode: VF = 480 mV @ 16 A, IR = 100 µA @ 40 V, no active control | Higher power loss (≥7.7 W vs. 2.9 W), requires larger heatsink, limited to ≤125 °C TJ | Lower cost but increases thermal management burden and reduces energy yield in high-irradiance climates |
| Infineon IPP040N04L | Standard N-channel MOSFET: RDS(on) = 4.0 mΩ, requires external gate driver and bootstrap circuit | Higher BOM count, layout sensitivity, and failure modes (e.g., shoot-through, gate oscillation) | Offers design flexibility for custom control but adds validation effort and reduces field reliability vs. integrated solution |
Compared with VS-16EWH04-M3 and IPP040N04L, the SPV1002D40TR delivers lowest system-level thermal load, highest integration (no external components), and guaranteed hot-spot mitigation without firmware or timing calibration-making it optimal for certified, maintenance-free PV deployments.
Availability
SPV1002D40TR is available at Aetrix Electronics and suitable for residential solar installations, commercial rooftop PV farms, and off-grid telecom power systems requiring stable component supply, long-lifecycle assurance, and compliance with IEC 61215 and UL 1703.
Supply support for SPV1002D40TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.
The SPV1002 belongs to ST's Photovoltaic Smart Power Switch family-engineered specifically to replace passive bypass diodes with intelligent, self-contained alternatives that reduce thermal stress and improve energy harvest in real-world shading conditions.
FAQ
What is the thermal derating curve for SPV1002D40TR at elevated ambient temperatures?
The SPV1002D40TR maintains full 16 A rating up to 75°C ambient when mounted on a 7 cm² copper pour (2 oz Cu, FR4). Above 75°C, current must be linearly reduced to 12 A at 100°C and 8 A at 125°C ambient, based on RthJC = 1.6 °C/W and maximum TJ = 175°C. Derating data is plotted in Figure 4 of Doc ID 018839 Rev 3.
Can SPV1002D40TR be used in parallel for higher current handling?
No-SPV1002D40TR is not designed for paralleling. Its autonomous gate drive relies on individual source-drain voltage sensing; paralleling causes unequal current sharing and thermal runaway. For >16 A applications, use multiple independent SPV1002D40TR units across separate cell substrings, as validated in ST's AN4125 application note.
Does SPV1002D40TR require any external components for basic operation?
No external components are required. The device integrates all necessary charge-pump circuitry, timing logic, and gate drive within the D²PAK package. Only PCB copper area for thermal management (minimum 5 cm²) and proper source/drain trace width (≥3 mm) are needed per layout guidelines in Section 4 of the datasheet.
How does SPV1002D40TR respond during rapid shading transitions, such as passing clouds?
SPV1002D40TR responds within <500 ns to reverse bias onset, initiating conduction before cell reverse voltage exceeds 40 V. Its gate charge recycling architecture ensures consistent TON/T ratio across transient events, preventing oscillation or latch-up. Response behavior is characterized in Figure 3 (reverse current vs. time) and validated per IEC 61215-2 MQT 11.12.
SPV1002D40TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io):
- 16A
- Voltage - Forward (Vf) (Max) @ If:
- 180 mV @ 16 A
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 1 µA @ 40 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
- Operating Temperature - Junction:
- -45°C ~ 175°C
SPV1002D40TR FAQ
1.How can I place an order for SPV1002D40TR through Aetrix?
Please submit a Request for Quotation (RFQ) for SPV1002D40TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPV1002D40TR reliable?
The price and inventory of SPV1002D40TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPV1002D40TR is usually 5 days.
3.What payment methods are accepted for SPV1002D40TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPV1002D40TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPV1002D40TR?
SPV1002D40TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPV1002D40TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPV1002D40TR?
For technical support, including SPV1002D40TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPV1002D40TR requirements.
6.How does Aetrix verify that SPV1002D40TR is sourced from the original manufacturer or authorized distributors?
All SPV1002D40TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPV1002D40TR meets industry standards.
7.What is the process for return or replacement of SPV1002D40TR?
All SPV1002D40TR units undergo pre-shipment inspection (PSI). If there is an issue with SPV1002D40TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPV1002D40TR part is unused and in its original packaging.
Return procedure for SPV1002D40TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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