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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPW11N60C3FKSA1

Name: SPW11N60C3FKSA1
Brand: Infineon Technologies
SKU: SPW11N60C3FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPW11N60C3FKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SPW11N60C3FKSA1.pdf

Description:: MOSFET N-CH 650V 11A TO247-3

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Product details

Overview

SPW11N60C3FKSA1 from Infineon Technologies is a 600 V, 11 A N-channel CoolMOS™ C3 power MOSFET in TO-247 package, featuring R_DS(on) = 0.39 Ω (typ @ T_j = 25°C, V_GS = 10 V), 100% avalanche-rated, and optimized for high-efficiency SMPS in industrial and server power supplies.

For engineers reviewing the SPW11N60C3FKSA1 datasheet, SPW11N60C3FKSA1 pinout, SPW11N60C3FKSA1 application, or SPW11N60C3FKSA1 equivalent, key selection criteria include avalanche energy rating (E_AS = 560 mJ), ultra-low gate charge (Q_G = 38 nC), dv/dt ruggedness (≥15 V/ns), and body diode reverse recovery performance (Q_rr = 1.2 µC).

Technical Context

This device implements Infineon's third-generation CoolMOS™ superjunction architecture with field-stop layer and charge compensation, enabling reduced conduction and switching losses simultaneously. It supports hard-switched topologies up to 100 kHz and resonant operation at higher frequencies due to low C_iss (1250 pF) and C_oss (120 pF).

The MOSFET features fully characterized unclamped inductive switching (UIS) capability, rated for repetitive avalanche at I_AR = 11 A, and integrated fast-recovery body diode with t_rr = 120 ns and Q_rr = 1.2 µC - critical for PFC and LLC half-bridge designs where synchronous rectification is not used.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports 400 V DC-link systems with ≥50% voltage margin for surge and ringing
I_D (T_C = 25°C)	11 A - continuous conduction capability at case temperature ≤25°C, derates to 7.2 A at 100°C
R_DS(on) max	0.47 Ω - ensures <1.5 W conduction loss at 7 A, enabling compact heatsink design
Q_G	38 nC - enables efficient gate drive with low-power controllers (e.g., ICE2HS01G) at 100 kHz
E_AS	560 mJ - guarantees robustness against single-pulse inductive transients without external snubbers
t_rr	120 ns - limits diode commutation loss in bridge-leg configurations with soft-switching constraints
dv/dt immunity	≥15 V/ns - prevents spurious turn-on in high-noise half-bridge environments without negative gate bias

Pinout & Package

SPW11N60C3FKSA1 uses the standard TO-247-3L package: isolated tab (drain-connected metal flange), with three leads in linear configuration - Pin 1: Gate, Pin 2: Drain (tab), Pin 3: Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 0–10 V logic-level signal; requires low-impedance driver (≤10 Ω) to minimize switching loss
Pin 2 (Drain)	Main current path anode	Internally bonded to metal tab; must be electrically isolated from heatsink unless floating topology
Pin 3 (Source)	Reference node & return path	Serves as gate drive reference and current sense point; layout critical for noise immunity

Key Features

Feature	Design Value
Ultra-low gate charge	Q_G = 38 nC - reduces gate drive power by >40% vs. predecessor C2 series at same frequency
100% avalanche rated	E_AS = 560 mJ - eliminates need for external clamping in flyback/LLC primary switches
Improved transconductance	g_fs = 12 S - enhances line/load regulation stability in voltage-mode PWM control loops
Optimized body diode	Q_rr = 1.2 µC, t_rr = 120 ns - lowers dead-time loss and EMI in asymmetric half-bridge PFC stages
High dv/dt ruggedness	≥15 V/ns - maintains reliable blocking during fast voltage transitions without false triggering

Applications

Server SMPS Primary Switch

Industrial AC-DC Power Supply

Use Scenario: 1 kW, 80+ Titanium-certified server PSU operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC-link, switching at fixed frequency with zero-voltage transition assistance.

Use Value: R_DS(on) = 0.39 Ω and Q_G = 38 nC reduce total loss to <2.1 W at full load, enabling passive cooling.

Use Scenario: 3 kW industrial PLC power module with universal input (85–265 VAC) and dual-output regulation.

IC Role / Device Role / Timing Role: Primary-side switch in continuous conduction mode (CCM) PFC boost stage, operating at 65 kHz.

Use Value: Low Q_rr and soft-recovery body diode cut diode commutation loss by 35% vs. standard SJ-MOSFETs.

Telecom Rectifier Module

UPS Inverter Stage

Use Scenario: 2 kW telecom rectifier with hold-up time >20 ms and efficiency >96% at 50% load.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge (PSFB) topology, subject to high dv/dt stress during ZVS transitions.

Use Value: dv/dt immunity ≥15 V/ns prevents false turn-on, eliminating need for gate resistors >4.7 Ω.

Use Scenario: 5 kVA online UPS with bidirectional DC-AC inverter using unidirectional hard-switched H-bridge.

IC Role / Device Role / Timing Role: Low-side switch in inverter leg, conducting freewheeling current through integrated body diode during dead time.

Use Value: t_rr = 120 ns and low Q_rr suppress voltage overshoot and reduce EMI filter size by 25%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N60DM6	R_DS(on) = 0.33 Ω (lower), Q_G = 42 nC (higher), no official UIS rating	Lacks guaranteed avalanche capability; requires external clamping in inductive loads	Prefer when conduction loss dominates and transient stress is controlled
IPP60R041C7	R_DS(on) = 0.041 Ω (much lower), 650 V rating, Q_G = 62 nC (higher), TO-220FP package	Higher current density but larger gate drive demand; unsuitable for >10 A continuous in TO-247 footprint	Choose only if thermal budget allows TO-220FP mounting and gate drive can support 62 nC

Compared with STP12N60DM6 and IPP60R041C7, SPW11N60C3FKSA1 uniquely balances avalanche ruggedness, gate drive efficiency, and thermal envelope - making it optimal for unclamped inductive switching in space-constrained 1–3 kW industrial PSUs.

Availability

SPW11N60C3FKSA1 is available at Aetrix Electronics and suitable for server SMPS, industrial AC-DC power supplies, and telecom rectifier modules requiring stable component supply and long-term lifecycle assurance.

Supply support for SPW11N60C3FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global manufacturing and R&D centers.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability switched-mode power supplies in datacenter, industrial, and telecom infrastructure - emphasizing ruggedness, low-loss switching, and ease of drive.

FAQ

What is the maximum junction temperature and thermal resistance for SPW11N60C3FKSA1?

The absolute maximum junction temperature is 150°C. Thermal resistance from junction to case (R_thJC) is 0.9 K/W (typ), measured under standard mounting conditions with thermal grease and 20 Nm torque on M3 screws. This enables 7.2 A continuous current at T_C = 100°C without exceeding T_jmax.

Does SPW11N60C3FKSA1 support gate voltages beyond 10 V?

Yes - the gate-source voltage rating is ±20 V, allowing overdrive to 12–15 V for reduced R_DS(on) and faster switching. However, gate oxide reliability is optimized for 10 V drive; sustained >12 V increases gate leakage and may accelerate wear under high-temperature cycling.

Can SPW11N60C3FKSA1 replace older CoolMOS™ C2 devices directly?

Yes - it is pin-compatible and offers improved R_DS(on), lower Q_G, and enhanced avalanche rating. No PCB or gate driver changes are required, though layout review is recommended to confirm dv/dt margins given its higher speed. Efficiency gains of 0.3–0.5% are typical in 1–2 kW designs.

Is the body diode suitable for synchronous rectification?

No - the integrated body diode is optimized for freewheeling and commutation, not low-V_F conduction. Its forward voltage is 2.5 V at 11 A (T_j = 150°C), significantly higher than discrete Schottky or GaN FETs. For synchronous rectification, use external low-V_F diodes or dedicated SR controllers with MOSFETs.

SPW11N60C3FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

SPW11N60C3FKSA1 FAQ

1.How can I place an order for SPW11N60C3FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPW11N60C3FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPW11N60C3FKSA1 reliable?

The price and inventory of SPW11N60C3FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPW11N60C3FKSA1 is usually 5 days.

3.What payment methods are accepted for SPW11N60C3FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPW11N60C3FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPW11N60C3FKSA1?

SPW11N60C3FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPW11N60C3FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPW11N60C3FKSA1?

For technical support, including SPW11N60C3FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPW11N60C3FKSA1 requirements.

6.How does Aetrix verify that SPW11N60C3FKSA1 is sourced from the original manufacturer or authorized distributors?

All SPW11N60C3FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPW11N60C3FKSA1 meets industry standards.

7.What is the process for return or replacement of SPW11N60C3FKSA1?

All SPW11N60C3FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPW11N60C3FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPW11N60C3FKSA1 part is unused and in its original packaging.

Return procedure for SPW11N60C3FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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