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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPW11N60S5

Name: SPW11N60S5
Brand: Infineon Technologies
SKU: SPW11N60S5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPW11N60S5

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SPW11N60S5.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:14,009

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Product details

Overview

SPW11N60S5 from Infineon Technologies is a 600 V, 11 A N-channel enhancement-mode power MOSFET in TO-247 package, featuring R_DS(on) = 0.39 Ω (typ) at V_GS = 10 V and T_j = 25 °C, 100% avalanche-rated, and optimized for high-voltage SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the SPW11N60S5 datasheet, SPW11N60S5 pinout, SPW11N60S5 application, or SPW11N60S5 equivalent, key selection criteria include avalanche energy rating (E_AS = 485 mJ), ultra-low gate charge (Q_G = 34 nC), dv/dt ruggedness (≥15 V/ns), and body diode reverse recovery performance (Q_rr = 1.1 µC, t_rr = 110 ns).

Technical Context

This MOSFET employs Infineon's latest Superjunction technology to achieve high voltage blocking with low conduction loss. Its structure supports periodic avalanche operation up to E_AS = 485 mJ at T_j = 25 °C and enables fast switching with Q_gd/Q_gs ratio of 0.42 - critical for minimizing Miller-induced shoot-through risk in hard-switched topologies.

The device integrates a robust intrinsic body diode with soft recovery characteristics (I_rrm = 12 A, di_r/dt ≤ 400 A/µs), enabling reliable operation in bridge configurations without external anti-parallel diodes in many medium-frequency applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - rated for 400 V DC-link systems with ≥50% safety margin against transients
I_D (T_C = 25 °C)	11 A - continuous drain current sustainable with minimal heatsinking in forced-air-cooled SMPS
R_DS(on) (max)	0.45 Ω @ V_GS = 10 V, T_j = 100 °C - ensures <1.5 W conduction loss at 11 A
E_AS	485 mJ - fully rated single-pulse avalanche energy, enabling robust overvoltage fault handling
Q_G	34 nC - low total gate charge reduces driver power demand and enables >100 kHz operation
t_r/t_f	20/22 ns - fast switching transitions minimize overlap losses in hard-switched converters
Q_rr	1.1 µC - low reverse recovery charge reduces commutation losses in LLC and phase-shifted full-bridge

Pinout & Package

SPW11N60S5 uses the industry-standard TO-247-3L package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring proper isolation when mounted on heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side current path	Connected to heatsink tab; must be insulated from chassis ground unless system design permits common-drain topology
Gate (G)	Control electrode	High-impedance input requiring <34 nC drive; sensitive to ESD and ringing - needs local RC snubber or gate resistor ≥10 Ω
Source (S)	Reference node for gate drive	Return path for load current and gate drive loop; layout must minimize inductance to prevent false turn-on during dV/dt events

Key Features

Feature	Design Value
100% Avalanche Rated	Guarantees safe single-pulse operation up to 485 mJ without degradation - eliminates need for external clamping in flyback or active clamp circuits
Ultra-Low Gate Charge	Q_G = 34 nC and Q_gd = 14.3 nC enable efficient driving with standard gate drivers (e.g., 1EDN7512B) at >150 kHz
dv/dt Ruggedness	Rated ≥15 V/ns - prevents spurious turn-on in high-dV/dt environments like IGBT replacement or SiC-compatible gate drive designs
Soft Body Diode Recovery	t_rr = 110 ns, Q_rr = 1.1 µC - reduces EMI and secondary-side stress in resonant converters compared to standard fast-recovery diodes

Applications

Industrial Switch-Mode Power Supplies

Power Factor Correction (PFC)

Use Scenario: 1–3 kW offline AC/DC supplies with active clamp forward or half-bridge topology.

IC Role / Device Role: Primary-side high-voltage switch handling 400 V DC-link and repetitive avalanche stress.

Use Value: 0.39 Ω R_DS(on) and 485 mJ E_AS reduce thermal derating and eliminate snubber losses in clamp circuits.

Use Scenario: Boost-type front-end PFC stage operating at 65–100 kHz in server PSUs and telecom rectifiers.

IC Role / Device Role: Main switching element conducting continuous 11 A RMS current with low conduction + switching loss trade-off.

Use Value: Low Q_G/Q_gd ratio and soft diode enable stable zero-current switching (ZCS) transition without external diode.

Motor Drive Inverters

Uninterruptible Power Supplies (UPS)

Use Scenario: 3-phase inverter stage for HVAC compressors and industrial pumps (≤2.2 kW per phase).

IC Role / Device Role: Low-side switching element in IGBT-like half-bridge configuration with integrated body diode commutation.

Use Value: 12 A pulsed I_S, 110 ns t_rr, and 15 V/ns dv/dt rating allow direct replacement of discrete IGBT+diode pairs in 16 kHz PWM systems.

Use Scenario: Online double-conversion UPS output inverter stage with bidirectional energy flow capability.

IC Role / Device Role: Synchronous rectifier and regeneration switch in H-bridge topology supporting regenerative braking and battery charging.

Use Value: Fully rated avalanche and low R_DS(on) support safe operation during grid failure transients and battery reversal events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK60ZFP	R_DS(on) = 0.53 Ω (max), Q_G = 42 nC, E_AS = 320 mJ	Lower avalanche rating and higher gate charge increase driver complexity and reduce fault margin in PFC	Preferable only where cost sensitivity outweighs reliability requirements in non-critical 1 kW SMPS
IPP60R041C6	R_DS(on) = 0.041 Ω (typ), V_DSS = 600 V, but Q_G = 72 nC and no 100% avalanche rating	Superior conduction loss but unsuitable for repetitive avalanche or unclamped inductive switching	Select only in ZVS/ZCS topologies with strict gate drive control and no overvoltage risk

Compared with STP12NK60ZFP and IPP60R041C6, SPW11N60S5 delivers optimal balance of avalanche robustness, gate drive efficiency, and thermal performance - making it the preferred choice for industrial-grade PFC, SMPS, and motor drive inverters demanding field-proven reliability under transient stress.

Availability

SPW11N60S5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, power factor correction circuits, motor drive inverters, and uninterruptible power supplies requiring stable component supply and long-term lifecycle assurance.

Supply support for SPW11N60S5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

SPW11N60S5 belongs to Infineon's CoolMOS™ S5 family - engineered specifically for high-efficiency, high-reliability 600 V power conversion in industrial and server-grade power supplies.

FAQ

Is SPW11N60S5 suitable for use in hard-switched LLC resonant converters?

Yes - its low Q_rr (1.1 µC), soft recovery body diode (t_rr = 110 ns), and 15 V/ns dv/dt rating make it well-suited for synchronous rectification and primary-side switching in LLC topologies up to 300 kHz. The device's low C_oss (45 pF) also minimizes dead-time losses during zero-voltage switching transitions.

What is the maximum recommended gate resistor value for SPW11N60S5 in a 100 kHz PFC boost stage?

A gate resistor of 15–22 Ω is recommended for 100 kHz operation with standard 2 A peak gate drivers. This balances switching loss (reduced by faster turn-on) against EMI and gate oscillation risk. Lower values (<10 Ω) may cause overshoot and ringing due to PCB trace inductance interacting with Q_gd = 14.3 nC.

Does SPW11N60S5 require a negative gate turn-off voltage to ensure reliable commutation?

No - the device's V_GS(th) = 2.5–3.5 V and low gate leakage (<100 nA) allow reliable turn-off with 0 V gate drive. However, applying –5 V improves noise immunity in high-dV/dt environments and reduces Miller-induced false turn-on probability during high-speed switching in bridge configurations.

Can SPW11N60S5 replace an IGBT in a 16 kHz motor inverter stage?

Yes - its 11 A continuous rating, 12 A pulsed body diode current, and 15 V/ns dv/dt ruggedness support direct IGBT replacement in 3-phase inverter legs up to 2.2 kW. Unlike IGBTs, it avoids tail current losses and enables simpler gate drive, though layout must minimize source inductance to maintain switching speed.

SPW11N60S5 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1460 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-21

SPW11N60S5 FAQ

1.How can I place an order for SPW11N60S5 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPW11N60S5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPW11N60S5 reliable?

The price and inventory of SPW11N60S5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPW11N60S5 is usually 5 days.

3.What payment methods are accepted for SPW11N60S5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPW11N60S5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPW11N60S5?

SPW11N60S5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPW11N60S5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPW11N60S5?

For technical support, including SPW11N60S5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPW11N60S5 requirements.

6.How does Aetrix verify that SPW11N60S5 is sourced from the original manufacturer or authorized distributors?

All SPW11N60S5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPW11N60S5 meets industry standards.

7.What is the process for return or replacement of SPW11N60S5?

All SPW11N60S5 units undergo pre-shipment inspection (PSI). If there is an issue with SPW11N60S5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPW11N60S5 part is unused and in its original packaging.

Return procedure for SPW11N60S5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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