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Infineon Technologies SPW17N80C3A

Part No.:
SPW17N80C3A
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixSPW17N80C3A.pdf
Description:
MOSFET N-CH 800V 17A TO247-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,151

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Product details

Overview

SPW17N80C3 from Infineon Technologies is an 800 V, 17 A Cool MOS™ power transistor in TO-247 package, featuring RDS(on) = 0.29 Ω at 10 VGS, ultra-low gate charge (Qg = 91–177 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial motor drives operating up to 150 °C junction temperature.

For engineers reviewing the SPW17N80C3 datasheet, SPW17N80C3 pinout, SPW17N80C3 application, or SPW17N80C3 equivalent, key selection criteria include its 50 V/ns dv/dt capability, 670 mJ single-pulse avalanche energy, 0.6 K/W junction-to-case thermal resistance, and body diode reverse recovery charge (Qrr = 15 µC) for hard-switched topologies.

Technical Context

This N-channel enhancement-mode MOSFET employs Infineon's 3rd-generation Cool MOS™ technology, optimized for reduced conduction and switching losses in high-voltage AC/DC converters. Its low Ciss (2320 pF) and Coss (1250 pF) enable fast switching with minimal EMI generation under 640 V DC bus conditions.

The device integrates a robust intrinsic body diode rated for 17 A continuous forward current and 550 ns reverse recovery time at 100 A/µs di/dt. Its gate plateau voltage of 6 V supports stable turn-on control across wide temperature ranges, while RDS(on) exhibits only moderate positive temperature coefficient up to 150 °C.

Key Specifications

ParameterValue and Actual Design Meaning
VDS800 V - Supports 650 V AC mains designs with 20% margin for surge and ringing
RDS(on)0.29 Ω @ Tj = 25°C - Enables <1.7 W conduction loss at 11 A DC, critical for thermally constrained PFC stages
Qg91–177 nC - Reduces gate drive power and allows use of smaller, lower-cost drivers in high-frequency operation
EAS670 mJ - Withstands single-pulse inductive energy without failure in flyback or LLC resonant converter startup
dv/dt Rating50 V/ns - Ensures reliable operation in high-dV/dt environments like phase-cut dimmers and unfiltered rectified inputs
RthJC0.6 K/W - Enables direct mounting to heatsink for >200 W continuous power dissipation at TC = 100°C
Qrr15 µC - Limits commutation losses and EMI during body diode conduction in half-bridge ZVS circuits

Pinout & Package

SPW17N80C3 uses the standard 3-pin TO-247 package with drain-connected tab for optimal thermal path. Pin 1 is Gate, Pin 2 is Drain (tab), Pin 3 is Source - consistent with JEDEC TO-247AB mechanical outline and Infineon's P-TO247 marking convention.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control terminalReceives 0–10 V logic-level gate drive; requires <200 nC total charge for full enhancement
Pin 2 (Drain / Tab)High-voltage power outputElectrically connected to metal tab; must be isolated from heatsink unless system ground referenced
Pin 3 (Source)Power return and referenceServes as local ground reference for gate driver; carries full load current and body diode reverse recovery current

Key Features

FeatureDesign Value
Ultra-low gate chargeQg = 91–177 nC enables 100+ kHz switching with <1 W gate drive loss in 640 V bus applications
Periodic avalanche ratedRated for repetitive 0.5 mJ avalanche events at 17 A, supporting robust overvoltage protection in unregulated converters
Extreme dv/dt immunity50 V/ns rating prevents spurious turn-on during fast transients in high-noise industrial environments
Low RDS(on) temperature coefficientRDS(on) increases only ~2.5× from 25°C to 150°C, enabling predictable thermal derating in sealed enclosures
Body diode softnessReverse recovery time trr = 550 ns with low peak reverse current (Irrm = 51 A) reduces snubber stress in bridge configurations

Applications

Server PSU Primary SwitchIndustrial Motor Drive Inverter

Use Scenario: High-efficiency 1 kW+ server power supply operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 640 V DC bus, conducting 11 A RMS with 25 ns rise time and 9 ns fall time.

Use Value: Low Qgd/Qgs ratio minimizes Miller-induced shoot-through risk during hard switching at elevated temperatures.

Use Scenario: Three-phase 7.5 kW VFD using six-pack IGBT/MOSFET inverter stage with regenerative braking.

IC Role / Device Role / Timing Role: Upper-leg switching device in 600 V DC link, conducting 17 A peak with 550 ns body diode recovery during PWM dead-time.

Use Value: 670 mJ EAS withstands inductive kickback during rapid deceleration without external clamping.

LED Streetlight DriverTelecom Rectifier Module

Use Scenario: Outdoor 200 W constant-current LED driver with universal AC input and passive PFC.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM), operating at 65 kHz with 17 A pulsed drain current.

Use Value: 0.29 Ω RDS(on) keeps conduction loss below 2.5 W at full load, reducing heatsink size by 35% vs. prior-gen 800 V MOSFETs.

Use Scenario: 48 V telecom rectifier with dual 2 kW modules feeding -48 V DC distribution bus.

IC Role / Device Role / Timing Role: Synchronous rectification switch in LLC resonant secondary side, requiring low Coss (1250 pF) for zero-voltage switching.

Use Value: Co(er) = 59 pF ensures minimal capacitive turn-on loss during ZVS transitions, improving efficiency above 95%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP16N80RDS(on) = 0.38 Ω, Qg = 120 nC, no specified avalanche ratingLacks periodic avalanche capability; unsuitable for unclamped inductive loadsPrefer SPW17N80C3 where EAS > 500 mJ is required for reliability
IPP60R190C6600 V rating, RDS(on) = 0.19 Ω, Qg = 65 nC, CoolMOS™ C6 generationLower voltage rating limits use to 400 V AC systems; higher efficiency at 600 V busSelect IPP60R190C6 only when system max VDS ≤ 600 V and switching frequency >150 kHz

Compared with STP16N80 and IPP60R190C6, SPW17N80C3 uniquely balances 800 V blocking, sub-0.3 Ω RDS(on), and certified avalanche ruggedness-making it the only choice for 800 V hard-switched PFC and industrial UPS designs demanding both efficiency and fault tolerance.

Availability

SPW17N80C3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, LED streetlight drivers, and telecom rectifier modules requiring stable component supply and long-term lifecycle support.

Supply support for SPW17N80C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The Cool MOS™ product line delivers high-voltage superjunction MOSFETs optimized for efficiency-critical AC/DC conversion, PFC, and motor control applications where low RDS(on) and fast switching are essential.

FAQ

What is the maximum recommended gate-source voltage for SPW17N80C3?

The absolute maximum DC gate-source voltage is ±20 V, with ±30 V allowed for AC signals above 1 Hz. Operation beyond ±20 V risks permanent gate oxide damage. For reliable long-term performance, gate drive should be clamped to 10–12 V during normal switching, as the gate threshold voltage is 2.1–3.9 V and plateau occurs near 6 V.

Can SPW17N80C3 replace older 800 V MOSFETs like SPW20N80C3 in existing designs?

Yes-SPW17N80C3 shares identical TO-247 package, pinout, and voltage rating with SPW20N80C3, but offers lower RDS(on) (0.29 Ω vs. 0.33 Ω) and reduced Qg. Thermal design may require minor heatsink adjustment due to higher current density, but no PCB layout change is needed.

Is the body diode suitable for synchronous rectification in LLC resonant converters?

No-the body diode has 550 ns reverse recovery time and 15 µC Qrr, making it unsuitable for high-frequency synchronous rectification. It is designed for freewheeling and clamping roles only. External Schottky or SiC diodes are required for true synchronous rectification above 100 kHz.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At TC = 100°C, the DC SOA limit is approximately 11 A at 100 VDS, decreasing to 5 A at 400 VDS. Pulse SOA supports 17 A up to 1 ms at 25°C case, but must be derated per the transient thermal impedance curve (ZthJC) when TC exceeds 25°C.

SPW17N80C3A Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
290mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:
3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
177 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2320 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
227W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-1

SPW17N80C3A FAQ

1.How can I place an order for SPW17N80C3A through Aetrix?

Please submit a Request for Quotation (RFQ) for SPW17N80C3A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPW17N80C3A reliable?

The price and inventory of SPW17N80C3A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPW17N80C3A is usually 5 days.

3.What payment methods are accepted for SPW17N80C3A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPW17N80C3A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPW17N80C3A?

SPW17N80C3A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPW17N80C3A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPW17N80C3A?

For technical support, including SPW17N80C3A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPW17N80C3A requirements.

6.How does Aetrix verify that SPW17N80C3A is sourced from the original manufacturer or authorized distributors?

All SPW17N80C3A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPW17N80C3A meets industry standards.

7.What is the process for return or replacement of SPW17N80C3A?

All SPW17N80C3A units undergo pre-shipment inspection (PSI). If there is an issue with SPW17N80C3A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPW17N80C3A part is unused and in its original packaging.

Return procedure for SPW17N80C3A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SPW17N80C3A Tags

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