Infineon Technologies SPW20N60S5FKSA1
- Part No.:
- SPW20N60S5FKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SPW20N60S5FKSA1.pdf
- Description:
- MOSFET N-CH 600V 20A TO247-3
- Quantity:
- Payment:

- Shipping:

Inventory:6,934
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Product details
Overview
SPW20N60S5 from Infineon Technologies is a 600 V, 20 A CoolMOS™ superjunction power MOSFET in PG-TO247 package, featuring RDS(on) = 0.19 Ω at VGS = 10 V and Tj = 25 °C, ultra-low gate charge (Qg = 79–103 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial motor drives.
For engineers reviewing the SPW20N60S5 datasheet, SPW20N60S5 pinout, SPW20N60S5 application, or SPW20N60S5 equivalent, key selection criteria include its 20 V/ns dv/dt immunity, 690 mJ single-pulse avalanche energy, 0.6 K/W junction-to-case thermal resistance, and body diode reverse recovery charge (Qrr = 12 µC) for hard-switched topologies.
Technical Context
This device employs Infineon's 5th-generation CoolMOS™ superjunction technology, enabling reduced conduction and switching losses simultaneously. Its optimized charge distribution yields low Ciss (3000 pF), Coss (1170 pF), and Crss (28 pF), with energy-related effective output capacitance Co(er) = 83 pF at VDS = 480 V.
The MOSFET supports robust operation under extreme conditions: rated for repetitive avalanche up to IAR = 20 A, operates across Tj = −55 °C to +150 °C, and maintains V(BR)DSS ≥ 600 V down to Tj = 150 °C per characterization curves.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Withstands full mains rectified voltage in universal-input 85–265 VAC SMPS designs. |
| RDS(on) | 0.19 Ω @ 10 V, 25 °C - Enables low conduction loss in 20 A continuous drain applications. |
| Qg | 79–103 nC - Reduces gate drive power and enables higher-frequency operation with lower EMI. |
| EAS | 690 mJ - Supports reliable single-pulse avalanche handling during transient overvoltage events. |
| dv/dt | 20 V/ns - Immune to false turn-on in high-noise, fast-switching bridge configurations. |
| RthJC | 0.6 K/W - Allows efficient heat transfer to heatsink in TO-247-based power modules. |
| Qrr | 12 µC - Limits switching loss and voltage overshoot during body diode commutation in LLC or asymmetrical half-bridge. |
Pinout & Package
SPW20N60S5 uses the PG-TO247 package (standard 3-pin through-hole variant with isolated tab), optimized for high-power thermal dissipation and mechanical robustness in industrial environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path from source to load | Electrically connected to metal tab - must be mounted to heatsink with electrically isolating thermal interface. |
| Source | Reference node for gate control and current return | Low-inductance connection point for gate driver return and current sensing; common reference for PWM control loop. |
| Gate | Control terminal for channel modulation | High-impedance input requiring low-ESR gate resistor (RG = 3.6 Ω typical) to damp ringing and control dV/dt. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate charge | Qg = 79–103 nC enables <100 kHz operation with minimal gate drive loss in high-efficiency converters. |
| Periodic avalanche rated | IAR = 20 A, tAR-limited by Tj ≤ 150 °C - supports reliable operation in unclamped inductive switching. |
| Extreme dv/dt immunity | 20 V/ns at VDS = 480 V, Tj = 125 °C - prevents spurious turn-on in high-side half-bridge configurations. |
| Low effective output capacitance | Co(er) = 83 pF - reduces turn-off energy loss and improves zero-voltage switching (ZVS) margin in resonant topologies. |
| Improved transconductance | gfs = 12 S - delivers stable gain and tight VGS(th) control (3.5–5.5 V) for predictable turn-on behavior. |
Applications
| Server PSU Primary Switch | Industrial PFC Boost Stage |
|---|---|
Use Scenario: High-density 1U server power supply operating at 100 kHz with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: Primary-side high-voltage switching element handling 20 A DC input current and 600 V blocking. Use Value: Low RDS(on) and Qg reduce conduction and switching losses, improving efficiency above 95% at full load. | Use Scenario: Three-phase industrial PFC front-end with >3 kW output and forced-air cooling. IC Role / Device Role / Timing Role: Fast-switching boost switch in continuous conduction mode (CCM) with 50 kHz–100 kHz operation. Use Value: Low Coss and Crss minimize voltage-dependent switching loss; avalanche rating ensures reliability during line surges. |
| Solar Inverter DC-Link Switch | EV Onboard Charger (OBC) Primary Side |
Use Scenario: String inverter DC-link stage converting 600–1000 V PV array output to AC grid. IC Role / Device Role / Timing Role: High-voltage IGBT replacement in two-level or three-level NPC inverter legs. Use Value: 600 V rating and 20 V/ns dv/dt immunity prevent shoot-through in high-dV/dt grid-synchronization events. | Use Scenario: Bidirectional OBC operating in DAB or phase-shifted full-bridge configuration. IC Role / Device Role / Timing Role: Primary-side switch managing 3.3–6.6 kW power transfer between AC grid and battery pack. Use Value: Body diode Qrr = 12 µC and soft recovery enable ZVS across wide load range without external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW20N60DM2 | RDS(on) = 0.22 Ω, Qg = 65 nC, no specified avalanche rating | Lacks periodic avalanche capability; requires external clamping in unclamped inductive loads | Prefer when gate drive power minimization is critical and avalanche stress is absent. |
| IPP60R190C7 | RDS(on) = 0.19 Ω, Qg = 62 nC, 650 V rating, lower Coss (750 pF) | Better high-frequency switching but lower VDS derating margin at 650 V vs. 600 V | Choose for higher-frequency (>150 kHz) designs where voltage margin allows 650 V rating. |
Compared with STW20N60DM2 and IPP60R190C7, SPW20N60S5 uniquely combines 600 V rating, 690 mJ avalanche energy, and 20 V/ns dv/dt immunity-making it preferred for ruggedized industrial SMPS and unclamped flyback/PFC where transient robustness is non-negotiable.
Availability
SPW20N60S5 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, solar inverters, and EV onboard chargers requiring stable component supply and long-term production continuity.
Supply support for SPW20N60S5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.
SPW20N60S5 belongs to the CoolMOS™ S5 product line, engineered for high-efficiency, high-reliability hard-switched and resonant power conversion in industrial, computing, and renewable energy systems.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The SPW20N60S5 supports ID = 13 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PG-TO247 package and ensures safe operation within the 0.6 K/W RthJC constraint while maintaining Tj ≤ 150 °C under steady-state conditions.
Does SPW20N60S5 have an integrated body diode, and what are its key parameters?
Yes, SPW20N60S5 includes a monolithic body diode with IS = 20 A continuous forward current at TC = 25 °C, VSD = 1.0–1.2 V, trr = 610 ns, and Qrr = 12 µC under specified test conditions (VR = 350 V, IF = IS, diF/dt = 100 A/µs). These values are critical for evaluating commutation loss in bridge topologies.
Can SPW20N60S5 replace older CoolMOS™ generations like S3 or S4 in existing designs?
Yes, SPW20N60S5 is a direct drop-in replacement for SPW20N60S3/S4 in most cases due to identical PG-TO247 package, pinout, and voltage/current ratings. However, its lower Qg and improved dv/dt immunity may require gate resistor adjustment to maintain optimal switching behavior and EMI profile.
What is the recommended gate resistor value for hard-switched 100 kHz operation?
A gate resistor of 3.6 Ω is specified in the datasheet for VDD = 350 V, ID = 20 A testing. For 100 kHz hard-switched operation, 3.3–4.7 Ω is recommended to balance switching speed, gate oscillation damping, and driver power dissipation-verified via oscilloscope measurement of VGS and VDS waveforms under actual load.
SPW20N60S5FKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 190mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 5.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 103 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 208W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-3-1
SPW20N60S5FKSA1 FAQ
1.How can I place an order for SPW20N60S5FKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SPW20N60S5FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPW20N60S5FKSA1 reliable?
The price and inventory of SPW20N60S5FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPW20N60S5FKSA1 is usually 5 days.
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5.How can I obtain technical support or documentation for SPW20N60S5FKSA1?
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6.How does Aetrix verify that SPW20N60S5FKSA1 is sourced from the original manufacturer or authorized distributors?
All SPW20N60S5FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPW20N60S5FKSA1 meets industry standards.
7.What is the process for return or replacement of SPW20N60S5FKSA1?
All SPW20N60S5FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPW20N60S5FKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPW20N60S5FKSA1 part is unused and in its original packaging.
Return procedure for SPW20N60S5FKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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