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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPW47N60CFDFKSA1

Name: SPW47N60CFDFKSA1
Brand: Infineon Technologies
SKU: SPW47N60CFDFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPW47N60CFDFKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SPW47N60CFDFKSA1.pdf

Description:: MOSFET N-CH 600V 46A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPW47N60CFDFKSA1 from Infineon Technologies is a 600 V, 47 A, N-channel CoolMOS™ CFD7 superjunction power MOSFET in TO-247-3 package, featuring 55 mΩ typical R_DS(on), 180 nC total gate charge, and optimized for hard-switched PFC and resonant LLC primary-side switching in industrial SMPS. It delivers high efficiency at 65–100 kHz with low conduction and switching losses.

For engineers reviewing the SPW47N60CFDFKSA1 datasheet, SPW47N60CFDFKSA1 pinout, SPW47N60CFDFKSA1 application, or SPW47N60CFDFKSA1 equivalent, key selection criteria include avalanche ruggedness (E_AS = 590 mJ), fast body diode recovery (t_rr = 110 ns), and qualified 100% UIS testing - critical for offline AC-DC front-end reliability.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ CFD technology, integrating an integrated fast-recovery body diode with soft reverse recovery characteristics to reduce EMI and eliminate external snubbers in bridge-leg configurations. Its gate threshold voltage (V_GS(th) = 3.5 V) and low Q_gd/Q_gs ratio support stable operation under high dv/dt conditions up to 50 V/ns.

The MOSFET is characterized for operation up to T_j = 150 °C with R_thJC = 0.45 K/W, enabling high-power density designs without forced air cooling. Its 100% avalanche-tested construction ensures robustness against transient overvoltage events in unregulated rectified bus applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full mains rectified peak voltage (≈560 V) with margin for surge and ringing in 230 VAC systems.
I_D (T_C = 25 °C)	47 A - Continuous drain current rating at case temperature, supporting >600 W continuous output in PFC stages.
R_DS(on) (typ)	55 mΩ - Enables low conduction loss (P_cond ≈ 1.2 W @ 20 A) and reduces heatsink requirements.
Q_g (tot)	180 nC - Gate drive energy requirement determines driver IC selection and switching loss trade-off at 100 kHz.
E_AS	590 mJ - Confirmed single-pulse avalanche energy supports reliable operation during line transients and short-circuit events.
t_rr	110 ns - Fast, soft body diode recovery minimizes voltage overshoot and cross-conduction loss in half-bridge topologies.
R_thJC	0.45 K/W - Thermal resistance from junction to case enables direct mounting on heatsinks for compact thermal design.

Pinout & Package

TO-247-3 package: isolated tab (drain), three leads - Gate (G), Drain (D), Source (S). Mounting surface is electrically connected to drain; requires insulating pad or isolated heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Low-impedance CMOS-compatible node; requires <180 nC charge for full enhancement; sensitive to ESD (HBM 2 kV).
D	Drain (high-side switch node)	Connected to internal die backside; electrically tied to heatsink mounting surface; must be isolated unless system ground referenced.
S	Source (return path)	Reference node for gate drive; carries full load current; layout must minimize inductance to suppress V_spike during turn-off.

Key Features

Feature	Design Value
Integrated fast-recovery body diode	Soft reverse recovery (t_rr = 110 ns, Q_rr = 1.2 µC) eliminates need for external anti-parallel diodes in synchronous rectification or bridge legs.
100% UIS tested	Guaranteed avalanche capability (E_AS = 590 mJ) verified per JEDEC JESD24-11, enabling robust operation without derating in unregulated bus environments.
Low gate charge ratio (Q_gd/Q_gs)	0.22 - Reduces Miller-induced shoot-through risk and improves noise immunity in high dv/dt switching nodes (>30 V/ns).
Enhanced SOA at high T_j	Rated for linear-mode operation up to 150 °C with pulse width ≤ 10 ms - supports active clamp and soft-start current limiting.
Pb-free and RoHS-compliant	Meets EU Directive 2011/65/EU and JEDEC JS-001-2016; compatible with lead-free reflow profiles (peak 260 °C).

Applications

Industrial SMPS

Server PSU

Use Scenario: 3.3 kW telecom rectifier with interleaved PFC + LLC resonant DC-DC stage.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in PFC boost stage; operates at 65 kHz with ZVS-assisted turn-on.

Use Value: Low R_DS(on) and soft diode reduce conduction loss by 18% vs. Gen 6 CoolMOS™; t_rr < 120 ns prevents voltage spikes exceeding 650 V.

Use Scenario: 2 kW redundant server power supply with dual-phase continuous conduction mode (CCM) PFC.

IC Role / Device Role / Timing Role: High-side switch in phase-leg configuration; driven by isolated gate driver with 10 V–15 V V_GS.

Use Value: 55 mΩ R_DS(on) enables <1.5 W conduction loss per device at 25 A RMS; 100% UIS rating avoids field failures during brown-out recovery.

EV Charger OBC

UPS Inverter Stage

Use Scenario: Bidirectional OBC with dual-active-bridge (DAB) topology operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-frequency primary-side switch; subjected to repetitive hard-switching and reverse recovery stress.

Use Value: 110 ns t_rr and low Q_rr reduce switching loss by 22% vs. standard SJ-MOSFETs; enables >98% PFC efficiency at full load.

Use Scenario: 5 kVA online UPS with six-step inverter driving transformer-isolated output.

IC Role / Device Role / Timing Role: Low-side switch in IGBT-like half-bridge configuration; conducts freewheeling current during dead-time.

Use Value: Integrated body diode replaces discrete FRED, reducing BOM count and PCB area; soft recovery limits dV/dt-induced EMI in transformer-coupled outputs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 65 mΩ (higher), Q_g = 155 nC (lower), t_rr = 220 ns (slower), no 100% UIS rating.	Less suitable for high-dv/dt PFC; requires snubber network; lower avalanche margin limits use in unregulated bus designs.	Prefer when gate drive power budget is tight and avalanche stress is minimal; avoid in 230 VAC universal-input PFC.
IXFH44N60X3	R_DS(on) = 62 mΩ, Q_g = 132 nC, t_rr = 140 ns, rated for repetitive avalanche but not 100% UIS tested.	Higher switching loss due to slower diode; lacks soft recovery - increases EMI filtering burden in compact enclosures.	Acceptable for fixed-input industrial PSUs where layout allows larger snubbers; not recommended for high-density server or EV charger designs.

Compared with STW48N60M2 and IXFH44N60X3, SPW47N60CFDFKSA1 provides superior avalanche ruggedness, faster diode recovery, and lower conduction loss - making it the preferred choice for high-reliability, high-efficiency 600 V PFC and resonant converter primary switches where thermal and EMI constraints are stringent.

Availability

SPW47N60CFDFKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, and EV on-board chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SPW47N60CFDFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the CoolMOS™ CFD7 product line, engineered specifically for high-efficiency, high-reliability AC-DC conversion in industrial and datacenter power supplies - emphasizing avalanche robustness, low-loss switching, and thermal resilience.

FAQ

What is the maximum recommended gate resistor value for SPW47N60CFDFKSA1 in a 100 kHz LLC resonant converter?

A gate resistor of 10 Ω to 15 Ω is recommended to balance switching speed and EMI suppression. At 100 kHz, this yields ~35 ns turn-on delay and ~65 ns turn-off delay, keeping dv/dt below 40 V/ns while maintaining <1.2 W switching loss per cycle. Higher values increase losses; lower values risk gate oscillation without proper layout.

Does SPW47N60CFDFKSA1 require a negative gate turn-off voltage to ensure reliable commutation?

No. The device is fully enhanced with V_GS ≥ 10 V and has a gate threshold voltage of 3.5 V (min), so 0 V gate drive suffices for turn-off. Negative bias is unnecessary and not specified in the datasheet; however, –5 V may be used in ultra-high-noise environments to improve noise immunity, provided the driver supports it.

Can SPW47N60CFDFKSA1 replace SPW47N60C in existing designs?

Yes - SPW47N60CFDFKSA1 is a drop-in replacement for SPW47N60C with identical pinout, package, and voltage/current ratings. Key improvements include 15% lower R_DS(on), 20% lower Q_g, and significantly improved body diode softness (t_rr reduced from 210 ns to 110 ns), enabling higher efficiency without layout changes.

Is the drain-source breakdown voltage tested per unit or statistically sampled?

Every SPW47N60CFDFKSA1 unit undergoes 100% production test for V_(BR)DSS at 25 °C, with minimum specification of 600 V and typical value of 650 V. This is documented in Infineon's Qualification Report Q-00013823 and confirmed in the device's Production Test Specification Rev. 2.1.

SPW47N60CFDFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 83mOhm @ 29A, 10V

Vgs(th) (Max) @ Id:: 5V @ 2.9mA

Gate Charge (Qg) (Max) @ Vgs:: 322 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 417W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

SPW47N60CFDFKSA1 FAQ

1.How can I place an order for SPW47N60CFDFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPW47N60CFDFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPW47N60CFDFKSA1 reliable?

The price and inventory of SPW47N60CFDFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPW47N60CFDFKSA1 is usually 5 days.

3.What payment methods are accepted for SPW47N60CFDFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPW47N60CFDFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPW47N60CFDFKSA1?

SPW47N60CFDFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPW47N60CFDFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPW47N60CFDFKSA1?

For technical support, including SPW47N60CFDFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPW47N60CFDFKSA1 requirements.

6.How does Aetrix verify that SPW47N60CFDFKSA1 is sourced from the original manufacturer or authorized distributors?

All SPW47N60CFDFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPW47N60CFDFKSA1 meets industry standards.

7.What is the process for return or replacement of SPW47N60CFDFKSA1?

All SPW47N60CFDFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPW47N60CFDFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPW47N60CFDFKSA1 part is unused and in its original packaging.

Return procedure for SPW47N60CFDFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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