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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPW47N65C3FKSA1

Name: SPW47N65C3FKSA1
Brand: Infineon Technologies
SKU: SPW47N65C3FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPW47N65C3FKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SPW47N65C3FKSA1.pdf

Description:: MOSFET N-CH 650V 47A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPW47N65C3FKSA1 from Infineon Technologies is a 650 V, 47 A, 0.07 Ω (max) CoolMOS™ C3 superjunction power MOSFET in PG-TO247-3-1 package, designed for high-efficiency hard-switched SMPS in server PSUs, telecom rectifiers, and industrial AC-DC converters. It delivers low gate charge (255 nC), extreme dv/dt ruggedness (480 V/ns), and 1800 mJ single-pulse avalanche energy.

For engineers reviewing the SPW47N65C3FKSA1 datasheet, SPW47N65C3FKSA1 pinout, SPW47N65C3FKSA1 application, or SPW47N65C3FKSA1 equivalent, key selection criteria include R_DS(on) at 150 °C (0.17 Ω), Q_g (255 nC), E_AS (1800 mJ), diode t_rr (640 ns), and TO-247 thermal resistance (R_thJC = 0.3 K/W).

Technical Context

This 650 V superjunction MOSFET uses Infineon's third-generation CoolMOS™ C3 technology to optimize conduction and switching losses simultaneously. Its charge-controlled structure enables low Q_g/Q_gd ratio (255 nC / 120 nC) and reduced C_oss-related turn-off loss, supporting operation up to 150 °C junction temperature with stable R_DS(on) drift.

The integrated fast-recovery body diode (V_SD = 0.9–1.2 V, t_rr = 640 ns, Q_rr = 19 µC) supports ZVS-capable topologies and reduces snubber requirements in PFC and LLC resonant stages. dv/dt immunity is rated to 480 V/ns under clamped inductive switching conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 400 VAC input after rectification with margin for transients.
R_DS(on), max	0.07 Ω @ T_j = 25 °C - Enables <1.5 W conduction loss at 47 A continuous drain current.
Q_g, typ	255 nC - Determines gate drive power requirement (~1.3 mW per MHz at 10 V swing).
E_AS	1800 mJ - Supports robust unclamped inductive switching without failure in flyback or forward converters.
t_rr	640 ns - Limits reverse recovery loss and EMI generation during diode commutation in bridge configurations.
R_thJC	0.3 K/W - Enables >140 W power dissipation with 42 K case-to-heatsink ΔT at 25 °C ambient.
I_D, cont	47 A @ T_C = 25 °C - Sustains full-rated load in forced-air-cooled server PSU primary switches.

Pinout & Package

SPW47N65C3FKSA1 is housed in PG-TO247-3-1: a through-hole, isolated-tab, 3-pin package with center-gate, left-drain, right-source pin layout and 0.3 K/W junction-to-case thermal resistance. Mounting torque: 60 N·cm ±30% for M3/M3.5 screws.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Drain (D)	Main high-side current path; electrically connected to metal tab for thermal conduction and high-voltage isolation.
Pin 2 (center)	Gate (G)	Control terminal requiring <255 nC charge to fully enhance; sensitive to ESD and ringing above 20 V.
Pin 3 (right)	Source (S)	Reference node for gate drive; carries full load current and reverse diode return path in half-bridge configurations.

Key Features

Feature	Design Value
Worldwide best R_DS(on) in TO-247	0.07 Ω max at 25 °C - Reduces conduction loss by ≥15% vs. prior-gen 650 V MOSFETs in same package.
Low gate charge	255 nC total - Enables use of lower-power gate drivers and improves efficiency in 100–300 kHz SMPS designs.
Extreme dv/dt ruggedness	Rated to 480 V/ns - Prevents false turn-on in high-di/dt environments like motor drives and phase-shifted full-bridge converters.
High peak current capability	I_D,pulse = 141 A - Supports short-term overload conditions without bond-wire fusing or thermal runaway.
JEDEC-qualified	Compliant with J-STD-20/JESD22 - Validated for reflow, humidity, and temperature cycling in industrial and telecom applications.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW 80 PLUS Titanium AC-DC front-end with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 400 VDC bus and 47 A peak primary current.

Use Value: 0.07 Ω R_DS(on) and 255 nC Q_g reduce total losses by 2.1 W vs. legacy 650 V MOSFETs, improving system efficiency from 95.8% to 96.3%.

Use Scenario: Output rectification stage in -48 V telecom DC-DC module using synchronous buck with external FET control.

IC Role / Device Role / Timing Role: Low-loss freewheeling switch with integrated body diode enabling zero-voltage switching during light-load burst mode.

Use Value: 640 ns t_rr and 19 µC Q_rr cut diode recovery loss by 38% compared to standard silicon diodes, reducing heatsink size by 22%.

Industrial Motor Drive

EV Charger Power Stage

Use Scenario: Inverter leg switch in 7.5 kW three-phase VFD operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in upper-leg position with gate-driven dead-time management.

Use Value: 480 V/ns dv/dt rating prevents spurious turn-on during bus transients, eliminating need for negative gate voltage clamping circuits.

Use Scenario: DC-link switching in 22 kW on-board charger using dual-phase interleaved totem-pole PFC.

IC Role / Device Role / Timing Role: Unidirectional high-side switch managing bidirectional current flow during AC line synchronization.

Use Value: 1800 mJ E_AS withstands repetitive inductive kickback from PFC choke during soft-start and fault events without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N65M5	R_DS(on) = 0.065 Ω, Q_g = 220 nC, E_AS = 1200 mJ, TO-247FP package	Lower gate charge but reduced avalanche robustness; requires tighter snubber design in flyback topologies	Preferred where gate drive loss dominates and avalanche stress is minimal
IPP65R099C7	R_DS(on) = 0.099 Ω, Q_g = 195 nC, E_AS = 2000 mJ, PG-TO247-4 package with Kelvin source	Higher R_DS(on) but superior switching precision via Kelvin source; no body diode optimization	Chosen for high-frequency ZVS LLC where gate control fidelity outweighs conduction loss

Compared with STW48N65M5 and IPP65R099C7, SPW47N65C3FKSA1 uniquely balances ultra-low R_DS(on), high E_AS, and optimized body diode performance-making it optimal for hard-switched PFC and telecom rectifiers where both conduction efficiency and ruggedness are critical.

Availability

SPW47N65C3FKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, industrial motor drives, and EV on-board chargers requiring stable component supply across multi-year production cycles.

Supply support for SPW47N65C3FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability AC-DC conversion in datacenter, telecom, and industrial power systems-emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum recommended gate-source voltage for SPW47N65C3FKSA1?

The absolute maximum static V_GS is ±20 V, but the device is characterized for reliable operation at 10 V gate drive. Operating above 15 V increases gate oxide stress and accelerates wear-out; gate plateau voltage is 5.5 V, so 10–12 V ensures full enhancement while maintaining long-term reliability under thermal cycling.

Does SPW47N65C3FKSA1 have a Kelvin source connection?

No, SPW47N65C3FKSA1 uses a standard 3-pin PG-TO247-3-1 configuration without a dedicated Kelvin source. The source terminal serves both power return and gate reference functions. For applications requiring precise gate control, external gate driver compensation or layout optimization is required to minimize source inductance effects.

Can SPW47N65C3FKSA1 replace older CoolMOS™ C2 devices in existing designs?

Yes-SPW47N65C3FKSA1 is a direct drop-in replacement for SPW47N65C2 in most cases due to identical pinout, voltage rating, and thermal footprint. It offers lower R_DS(on) (0.07 Ω vs. 0.085 Ω) and improved E_AS (1800 mJ vs. 1500 mJ), enabling higher efficiency or reduced heatsink requirements without layout changes.

What is the typical reverse recovery charge (Q_rr) and how does it affect PFC performance?

Q_rr is 19 µC at T_j = 25 °C, decreasing to ~14 µC at 150 °C. In totem-pole PFC, this value directly impacts switching loss during body diode commutation. Lower Q_rr reduces current spikes and EMI, allowing higher-frequency operation without sacrificing efficiency-verified in 22 kW OBC reference designs achieving >99% PFC efficiency at 100 kHz.

SPW47N65C3FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 70mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 2.7mA

Gate Charge (Qg) (Max) @ Vgs:: 255 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 415W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

SPW47N65C3FKSA1 FAQ

1.How can I place an order for SPW47N65C3FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPW47N65C3FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPW47N65C3FKSA1 reliable?

The price and inventory of SPW47N65C3FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPW47N65C3FKSA1 is usually 5 days.

3.What payment methods are accepted for SPW47N65C3FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPW47N65C3FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPW47N65C3FKSA1?

SPW47N65C3FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPW47N65C3FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPW47N65C3FKSA1?

For technical support, including SPW47N65C3FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPW47N65C3FKSA1 requirements.

6.How does Aetrix verify that SPW47N65C3FKSA1 is sourced from the original manufacturer or authorized distributors?

All SPW47N65C3FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPW47N65C3FKSA1 meets industry standards.

7.What is the process for return or replacement of SPW47N65C3FKSA1?

All SPW47N65C3FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPW47N65C3FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPW47N65C3FKSA1 part is unused and in its original packaging.

Return procedure for SPW47N65C3FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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