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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPW52N50C3FKSA1

Name: SPW52N50C3FKSA1
Brand: Infineon Technologies
SKU: SPW52N50C3FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPW52N50C3FKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SPW52N50C3FKSA1.pdf

Description:: MOSFET N-CH 560V 52A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPW52N50C3FKSA1 from Infineon Technologies is a 500 V, 52 A CoolMOS™ C3 superjunction N-channel power MOSFET in PG-TO247 package, featuring R_DS(on) = 0.07 Ω at V_GS = 10 V and T_j = 25 °C, ultra-low gate charge (Q_g = 290 nC), and periodic avalanche rating - deployed in high-efficiency PFC stages of industrial SMPS and solar inverters.

For engineers reviewing the SPW52N50C3FKSA1 datasheet, SPW52N50C3FKSA1 pinout, SPW52N50C3FKSA1 application, or SPW52N50C3FKSA1 equivalent, key selection criteria include its 500 V V_(BR)DSS, 0.07 Ω R_DS(on), 290 nC total gate charge, 50 V/ns dv/dt capability at 125 °C, and TO-247 thermal resistance of 0.3 K/W.

Technical Context

This CoolMOS™ C3 device uses charge-compensation technology to achieve superior R_DS(on) × Q_g figure-of-merit versus planar MOSFETs, with optimized cell pitch and reduced specific on-resistance. Its gate threshold voltage (V_GS(th) = 2.1–3.9 V) enables robust TTL/CMOS drive compatibility.

The transistor supports hard-switched topologies up to 100 kHz and resonant operation beyond, enabled by low effective output capacitance (C_o(er) = 212 pF) and fast switching (t_d(off) = 120 ns, t_f = 10 ns). Its body diode exhibits t_rr = 580 ns and Q_rr = 20 μC at 380 V, supporting ZVS-assisted designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	500 V - Withstands DC bus voltages up to 400 V in 3-phase rectified systems with margin for transients.
R_DS(on)	0.07 Ω @ V_GS = 10 V, T_j = 25 °C - Enables <1.5 W conduction loss at 52 A, critical for high-current PFC stages.
Q_g	290 nC - Reduces gate driver power demand and switching losses in high-frequency (>65 kHz) converters.
E_AS	1800 mJ - Supports single-pulse avalanche energy handling during overvoltage events without failure.
C_iss	6800 pF - Low input capacitance improves Miller immunity and reduces gate oscillation risk in high-dv/dt environments.
t_d(off)	120 ns - Enables precise timing control in synchronous rectification and phase-shifted full-bridge topologies.
R_thJC	0.3 K/W - Allows >400 W dissipation with moderate heatsinking, suitable for compact 3 kW+ industrial supplies.

Pinout & Package

PG-TO247 package: 3-pin through-hole, isolated tab, standard footprint per PCN 2009-134-A. Mounting plane is electrically connected to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically tied to metal tab - requires insulated mounting hardware when heatsink is grounded.
Source	Reference node for gate drive and current sensing	Low-inductance connection essential for stable gate control and accurate shunt-based current monitoring.
Gate	Control electrode for channel formation	High-impedance input requiring <100 nA leakage; sensitive to ESD and ringing - needs RC snubber or gate resistor ≤10 Ω.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	0.07 Ω × 290 nC = 20.3 Ω·nC - Delivers best-in-class efficiency in continuous conduction mode (CCM) PFC.
Periodic avalanche rated	Rated for repetitive I_AR = 20 A pulses - Enables reliable operation in unclamped inductive switching (e.g., relay drivers).
Extreme dv/dt ruggedness	50 V/ns at T_j = 125 °C - Prevents false turn-on in high-speed half-bridge configurations with fast bus transitions.
Low effective output capacitance	C_o(er) = 212 pF - Reduces turn-off energy loss (E_off ∝ V² × C_oss) in hard-switched applications.

Applications

Industrial Switch-Mode Power Supplies

Solar Inverters (DC-AC Stage)

Use Scenario: High-voltage DC-DC boost converter in 3 kW telecom rectifier with 400 V output.

IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) PFC stage, switching at 65 kHz.

Use Value: 0.07 Ω R_DS(on) limits conduction loss to 190 W at full load, enabling >96% system efficiency.

Use Scenario: DC-link switching in string-level solar inverter with 600 V bus.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC topology operating at 16 kHz.

Use Value: 50 V/ns dv/dt rating prevents spurious turn-on during high-slew-rate commutation across split capacitors.

Uninterruptible Power Supplies (UPS)

Motor Drives (HV Inverter Stage)

Use Scenario: Bidirectional DC-AC inverter in online double-conversion UPS with 380 V AC output.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid bridge, conducting 52 A RMS continuously.

Use Value: 52 A continuous drain current at T_C = 100 °C supports derated operation without forced air cooling.

Use Scenario: Inverter leg in 7.5 kW HVAC compressor drive with 480 V AC input.

IC Role / Device Role / Timing Role: High-efficiency switching element in Si-based 2-level inverter, switching at 8 kHz.

Use Value: 1800 mJ single-pulse avalanche energy withstands motor stall-induced voltage spikes without clamping circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041C7	650 V rating, R_DS(on) = 0.041 Ω, Q_g = 225 nC - higher voltage margin but lower R_DS(on).	Better suited for 400–450 V DC bus systems where overvoltage headroom is critical.	Select when system bus exceeds 420 V or when lower conduction loss dominates design priority.
STW56N60M2	600 V rating, R_DS(on) = 0.055 Ω, Q_g = 320 nC - higher gate charge increases driver complexity.	Optimized for lower-frequency (<30 kHz) motor drives with less stringent switching loss requirements.	Prefer when thermal management favors lower R_DS(on) over fast switching, and gate drive capability is ample.

Compared with IPW65R041C7 and STW56N60M2, SPW52N50C3FKSA1 offers the lowest gate charge among 500 V-class devices, enabling simpler gate drivers and lower EMI in high-frequency PFC, while maintaining sufficient avalanche ruggedness for industrial transients.

Availability

SPW52N50C3FKSA1 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar inverters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for SPW52N50C3FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The CoolMOS™ C3 product line targets high-efficiency, high-power-density AC-DC conversion, delivering optimized trade-offs between conduction loss, switching loss, and ruggedness for 500–650 V applications.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The SPW52N50C3FKSA1 supports 30 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects junction-to-case thermal resistance (0.3 K/W) and safe operating area constraints under sustained conduction conditions.

Does this MOSFET have an integrated body diode, and what are its key parameters?

Yes - it features a monolithic fast-recovery body diode with I_S = 52 A continuous forward current (T_C = 25 °C), V_SD = 1.0–1.2 V at rated current, t_rr = 580 ns, and Q_rr = 20 μC. These values are measured at V_R = 380 V, I_F = I_S, and di_F/dt = 100 A/μs.

Is SPW52N50C3FKSA1 suitable for zero-voltage switching (ZVS) topologies?

Yes - its low C_oss (2200 pF typ.) and C_rss (150 pF typ.), combined with 50 V/ns dv/dt rating, enable reliable ZVS operation in LLC resonant converters and phase-shifted full-bridge topologies up to 300 kHz, provided gate drive timing and dead-time control are precisely managed.

What is the recommended gate resistor value for hard-switched 65 kHz PFC operation?

A gate resistor of 4.7 Ω to 6.8 Ω is recommended for 65 kHz hard-switched PFC, balancing switching speed (to minimize E_on/E_off) and gate ringing suppression. This range achieves t_d(on) ≈ 20 ns and t_d(off) ≈ 120 ns while keeping V_GS overshoot below 12 V with typical 12 V gate drivers.

SPW52N50C3FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 560 V

Current - Continuous Drain (Id) @ 25°C:: 52A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 70mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 2.7mA

Gate Charge (Qg) (Max) @ Vgs:: 290 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 417W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

SPW52N50C3FKSA1 FAQ

1.How can I place an order for SPW52N50C3FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPW52N50C3FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPW52N50C3FKSA1 reliable?

The price and inventory of SPW52N50C3FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPW52N50C3FKSA1 is usually 5 days.

3.What payment methods are accepted for SPW52N50C3FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPW52N50C3FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPW52N50C3FKSA1?

SPW52N50C3FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPW52N50C3FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPW52N50C3FKSA1?

For technical support, including SPW52N50C3FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPW52N50C3FKSA1 requirements.

6.How does Aetrix verify that SPW52N50C3FKSA1 is sourced from the original manufacturer or authorized distributors?

All SPW52N50C3FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPW52N50C3FKSA1 meets industry standards.

7.What is the process for return or replacement of SPW52N50C3FKSA1?

All SPW52N50C3FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPW52N50C3FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPW52N50C3FKSA1 part is unused and in its original packaging.

Return procedure for SPW52N50C3FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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