Taiwan Semiconductor Corporation SRA860 C0G

Overview

SRA860 C0G from Taiwan Semiconductor is an 8 A, 60 V repetitive peak reverse voltage Schottky barrier rectifier in TO-220AC package, featuring 0.70 V typical forward voltage at 8 A and 25 °C, 150 A surge capability, and AEC-Q101 qualification option (SRA860H), used in high-efficiency DC/DC converters and industrial SMPS.

For engineers reviewing the SRA860 C0G datasheet, SRA860 C0G pinout, SRA860 C0G application, or SRA860 C0G equivalent, key selection criteria include its 60 V V_RRM, 0.70 V V_F at rated current, 10 mA reverse leakage at 100 °C, 4 °C/W junction-to-case thermal resistance, and TO-220AC mechanical compatibility with standard heatsink mounting.

Technical Context

The SRA860 C0G implements a single-die Schottky junction optimized for low conduction loss in medium-voltage switching applications. Its guard ring structure enhances ruggedness against transient overvoltage, while the matte tin-plated leads meet J-STD-002 solderability and JESD201 Class 2 whisker resistance requirements.

Thermally, it delivers 4 °C/W R_θJC from junction to case, enabling stable operation up to 150 °C maximum junction temperature when properly heatsinked. The device supports 8.3 ms half-sine surge currents up to 150 A without degradation under specified derating conditions.

Key Specifications

Pinout & Package

TO-220AC package: single-ended, 3-lead outline with isolated tab (cathode-connected metal flange), matte tin-plated leads, UL 94V-0 molding compound, 1.85 g mass, polarity marked on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-8EWH06FN-M3, SRA860 C0G provides AEC-Q101 assurance for automotive use but trades 0.03 V higher V_F; versus MUR860EG, it delivers 59% lower conduction loss and zero reverse recovery, making it superior for >100 kHz SMPS where thermal and efficiency constraints dominate.

Availability

SRA860 C0G is available at Aetrix Electronics and suitable for server power supplies, automotive DC/DC converters, and industrial SMPS requiring stable component supply with consistent parametric performance and long-term manufacturability.

Supply support for SRA860 C0G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS devices, and MOSFETs since 1979.

The SRA8xx series targets high-reliability, medium-voltage power conversion applications, with design emphasis on thermal robustness, surge resilience, and automotive-grade qualification pathways for industrial and transportation markets.

FAQ

What is the maximum junction temperature rating for the SRA860 C0G?

The SRA860 C0G has a maximum junction temperature (T_J) rating of +150 °C, verified per absolute maximum ratings table in the official TSC datasheet Version J2103. This allows operation in high-ambient environments when paired with appropriate heatsinking. Derating begins above 100 °C case temperature, and the device maintains full 8 A I_F rating up to 100 °C case temperature. SRA860 C0G must not exceed 150 °C junction temperature under any operating condition.

Does the SRA860 C0G have AEC-Q101 qualification?

The base SRA860 C0G is not AEC-Q101 qualified; however, the SRA860H variant is explicitly qualified per AEC-Q101. The "H" suffix denotes automotive-grade screening, including stress tests for temperature cycling, humidity, and mechanical shock. SRA860 C0G shares identical electrical and thermal specs with SRA860H, differing only in qualification status and marking code. For automotive applications, specify SRA860H.

What is the forward voltage specification for SRA860 C0G at 8 A and 100 °C junction temperature?

The forward voltage (V_F) for SRA860 C0G is not specified at 100 °C in the datasheet; only the 25 °C value (0.70 V max) and reverse leakage (10 mA max at 100 °C) are provided. V_F increases with temperature-typical data shows ~0.62 V at 100 °C for similar Schottky devices-but TSC does not publish a guaranteed V_F limit at elevated temperatures for SRA860 C0G. Designers should use the 25 °C spec with thermal modeling or consult TSC's application engineering for characterization data.

How is the polarity marked on the SRA860 C0G TO-220AC package?

The SRA860 C0G uses standard TO-220AC polarity marking: the cathode is identified by a wide band or "C" symbol adjacent to lead 2 (center lead), and the metal tab is electrically connected to the cathode. The anode is lead 1 (leftmost lead when viewing the front-marking side with leads down). Polarity is also confirmed in the "MECHANICAL DATA" section of the TSC datasheet, which states "Polarity: As marked." No separate anode/cathode silkscreen is applied beyond the band and tab connection.

What is the thermal resistance from junction to case (R_θJC) for SRA860 C0G?

The junction-to-case thermal resistance (R_θJC) for SRA860 C0G is 4 °C/W, as published in the "THERMAL PERFORMANCE" section of the TSC datasheet Version J2103. This value is measured under standardized test conditions (steady-state, 1-inch² copper pad, 1 oz Cu, no airflow) and applies to both SRA860 C0G and SRA860H variants. It enables accurate calculation of junction temperature rise above heatsink temperature: ΔT_J-C = P_diss × 4 °C/W.