Taiwan Semiconductor Corporation SRAF10150 C0G

Overview

SRAF10150 from Taiwan Semiconductor is a 10 A, 150 V repetitive peak reverse voltage Schottky barrier rectifier in ITO-220AC package, featuring 0.95 V forward voltage at 10 A and 100 µA reverse current at rated VR and 25°C, designed for high-efficiency DC–DC converters and switching mode power supplies.

For engineers reviewing the SRAF10150 datasheet, SRAF10150 pinout, SRAF10150 application, or SRAF10150 equivalent, key selection criteria include its 150 V V_RRM, 200 A non-repetitive surge rating, 4 °C/W junction-to-case thermal resistance, AEC-Q101 qualification option (SRAF10150H), and ITO-220AC mounting compatibility with 0.56 N·m torque limit.

Technical Context

The SRAF10150 employs a single-die Schottky structure with guard ring over-voltage protection, enabling stable operation up to 150 V reverse bias while maintaining low conduction loss. Its 125–150°C maximum junction temperature range supports high-temperature industrial and automotive-grade designs when paired with appropriate heatsinking.

With 10,000 V/µs critical rate of rise of off-state voltage (dv/dt) and UL Recognized File #E-326243 compliance, the device sustains fast-switching transients in high-frequency SMPS topologies without spurious turn-on or thermal runaway under surge conditions.

Key Specifications

Pinout & Package

Package: ITO-220AC - Insulated TO-220 variant with isolated tab, UL 94V-0 molding compound, matte tin-plated leads compliant with J-STD-002 solderability, and polarity marked on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with SRAF10150, VS-10BQ015 delivers lower conduction loss but lacks automotive qualification, while SB10150 matches AEC-Q101 support and improves VF marginally-making it suitable for dual-sourcing in automotive ECUs where thermal headroom is limited.

Availability

SRAF10150 is available at Aetrix Electronics and suitable for switching mode power supplies, DC–DC converters, and automotive-grade adapter designs requiring stable component supply, consistent parametric performance, and long-term manufacturability.

Supply support for SRAF10150 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, and MOSFETs for industrial and automotive markets.

The SRAF series targets high-reliability, high-current Schottky rectification in space-constrained power stages, emphasizing thermal robustness, surge resilience, and qualification-readiness for demanding environments.

FAQ

What is the maximum junction temperature rating for the SRAF10150?

The SRAF10150 has a maximum junction temperature (T_J) of +150°C under specified operating conditions. This rating applies when the device is operated within its absolute maximum ratings and properly heatsinked. The SRAF10150 datasheet specifies two TJ ranges: –55°C to +125°C for standard versions and –55°C to +150°C for versions meeting extended thermal requirements. Always verify derating curves in Figure 1 of the official SRAF10150 datasheet.

Does the SRAF10150 have AEC-Q101 qualification?

The base SRAF10150 is not AEC-Q101 qualified; however, the SRAF10150H variant is explicitly qualified per AEC-Q101. The "H" suffix denotes automotive-grade screening and testing. For automotive applications requiring qualification evidence, specify SRAF10150H and confirm packaging and date code markings match TSC's qualified lot documentation.

What is the forward voltage of the SRAF10150 at 10 A and 100°C junction temperature?

The SRAF10150 datasheet does not specify forward voltage at 100°C junction temperature. It provides V_F = 0.95 V (max) at 10 A and 25°C. As temperature increases, V_F decreases for Schottky diodes; typical behavior shows ~0.85–0.88 V at 100°C. For precise thermal modeling, use the device's V_F vs. I_F and T_J curves in Figure 4 of the SRAF10150 datasheet.

Can the SRAF10150 replace the SRAF10100 in a 100 V design?

Yes, the SRAF10150 can replace the SRAF10100 in most 100 V designs because it meets or exceeds all key parameters: higher V_RRM (150 V vs. 100 V), same I_F (10 A), identical package (ITO-220AC), and comparable V_F (0.95 V vs. 0.85 V). However, verify that the slight increase in forward voltage does not impact efficiency or thermal margin in your specific layout and load profile before finalizing the SRAF10150 substitution.

What is the reverse leakage current specification for the SRAF10150 at 125°C?

The SRAF10150 has a maximum reverse leakage current (I_R) of 5 mA at 150 V and T_J = 125°C. This value is specified in the Electrical Specifications table under "Reverse current @ rated V_R" for SRAF1090–SRAF10150 at 125°C. At 100°C, the datasheet lists ≤10 mA for SRAF1050–SRAF1060 and no value for SRAF10150, so 5 mA at 125°C is the highest confirmed I_R condition for this part.