Taiwan Semiconductor Corporation SRAF530

Overview

SRAF530 from Taiwan Semiconductor is a 5A, 30V repetitive peak reverse voltage Schottky barrier rectifier in ITO-220AC package, featuring 0.55V forward voltage at 5A and 25°C, 120A surge capability, 10°C/W junction-to-case thermal resistance, and AEC-Q101 qualification option (SRAF530H). It serves as primary output rectifier in compact DC/DC converters.

For engineers reviewing the SRAF530 datasheet, SRAF530 pinout, SRAF530 application, or SRAF530 equivalent, key selection criteria include V_RRM=30V, I_F=5A, V_F=0.55V, T_J max=125°C, and ITO-220AC mechanical compatibility with heatsink mounting.

Technical Context

This single-die Schottky rectifier uses planar guard ring structure for over-voltage protection and achieves high efficiency via low conduction loss. Its 10,000 V/µs dv/dt rating supports fast-switching topologies without false triggering.

Thermal performance is defined by R_θJC=10°C/W and operation up to 125°C junction temperature. Reverse leakage remains ≤500 µA at 25°C and ≤15 mA at 100°C under rated V_R, enabling stable performance in thermally constrained adapters.

Key Specifications

Pinout & Package

ITO-220AC package: 3-terminal through-hole outline with isolated tab (cathode-connected), matte tin-plated leads, UL 94V-0 molding compound, and 0.56 N·m maximum mounting torque. Polarity marked on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-50SQ030 and SB530, the SRAF530 offers superior thermal resistance (10°C/W), standardized ITO-220AC mounting torque (0.56 N·m), and consistent AEC-Q101 availability across voltage grades-critical for automotive and industrial BOM consolidation.

Availability

SRAF530 is available at Aetrix Electronics and suitable for switching mode power supplies, DC/DC converters, and adapters requiring stable component supply with automotive-grade qualification options.

Supply support for SRAF530 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global power electronics markets since 1979.

The SRAF5xx series belongs to TSC's high-reliability Schottky rectifier product line, engineered specifically for high-efficiency, high-surge industrial and automotive power conversion systems where thermal robustness and transient immunity are critical.

FAQ

What is the maximum junction temperature rating for the SRAF530?

The SRAF530 has a maximum junction temperature (T_J) rating of +125°C under continuous operation. This limit applies to standard-grade devices; the AEC-Q101 qualified SRAF530H variant maintains the same T_J max but extends storage temperature to +150°C. Thermal design must ensure junction temperature stays below this threshold under worst-case ambient and power dissipation conditions.

Does the SRAF530 have an AEC-Q101 qualified version?

Yes, the SRAF530H is the AEC-Q101 qualified version of the SRAF530. It undergoes additional stress testing-including temperature cycling, humidity bias, and high-temperature operating life-to meet automotive reliability standards. The "H" suffix denotes qualification, and both variants share identical electrical parameters and ITO-220AC packaging.

What is the forward voltage drop of the SRAF530 at rated current?

The SRAF530 exhibits a typical forward voltage (V_F) of 0.55 V at 5 A and 25°C junction temperature, measured with 0.3 ms pulse width. At elevated temperatures (100°C), V_F decreases slightly due to Schottky characteristics, remaining within design margins for efficiency calculations in real-world thermal environments.

How does the SRAF530 compare to silicon fast recovery diodes in SMPS applications?

The SRAF530 eliminates reverse recovery charge (Q_rr ≈ 0), resulting in zero switching loss during turn-off and reduced EMI compared to silicon fast recovery diodes. Its 0.55 V V_F yields lower conduction loss than typical 1.2 V Si diodes at 5 A, directly improving efficiency-especially in high-frequency, high-duty-cycle DC/DC converters where thermal headroom is limited.

Is the metal tab of the SRAF530 electrically isolated?

No, the metal tab of the SRAF530 is internally connected to the cathode terminal. When mounted to a heatsink, the tab becomes part of the cathode circuit. Electrical isolation must be implemented using insulating washers or thermal pads if the heatsink is grounded or referenced to a different potential in the system layout.