Taiwan Semiconductor Corporation SRAF830

Overview

SRAF830 from Taiwan Semiconductor is an AEC-Q101-qualified 8A, 30V Schottky barrier rectifier in ITO-220AC package, delivering low forward voltage (0.55 V at 8A, 25°C), high surge capability (150 A), and junction temperature up to +150°C. It serves as a primary output rectifier in automotive-grade DC-DC converters and industrial SMPS where efficiency and reliability under thermal stress are critical.

For engineers reviewing the SRAF830 datasheet, SRAF830 pinout, SRAF830 application, or SRAF830 equivalent, key selection factors include its 30 V repetitive peak reverse voltage, 5 °C/W junction-to-case thermal resistance, guard ring–enhanced over-voltage protection, and matte tin–plated leads compliant with J-STD-002 solderability.

Technical Context

The SRAF830 employs a single-die Schottky structure optimized for low conduction loss and fast switching, with no reverse recovery charge. Its 10,000 V/µs dv/dt rating supports stable operation in high-frequency switching topologies without parasitic turn-on.

Thermally, it features a low R_θJC of 5 °C/W and operates across –55°C to +150°C junction range, enabling use in under-hood automotive environments and sealed industrial power modules where forced-air cooling is limited.

Key Specifications

Pinout & Package

Package: ITO-220AC - Insulated TO-220 variant with electrically isolated tab (non-conductive backside), UL 94V-0 molding compound, and matte tin-plated leads rated for J-STD-002 soldering. Mounting torque ≤0.56 N·m.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with SRAF830, VS-8EWH03FN-M3 offers slightly lower forward drop but doubles reverse leakage, while SB830 lacks isolation and automotive qualification-making SRAF830 the only choice for thermally constrained, safety-critical automotive rectification requiring guaranteed isolation and transient robustness.

Availability

SRAF830 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial SMPS, and telecom power shelf designs requiring stable component supply, AEC-Q101 compliance, and high-reliability Schottky performance.

Supply support for SRAF830 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power devices, rectifiers, and protection components since 1979.

The SRAF8xx series belongs to TSC's AEC-Q101–qualified Schottky rectifier product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive and industrial environments where thermal stability and transient immunity are non-negotiable.

FAQ

What is the maximum junction temperature rating for the SRAF830?

The SRAF830 has a maximum junction temperature (T_J) rating of +150°C, validated across its full operating range. This allows uninterrupted 8 A operation in ambient temperatures up to +75°C when mounted on a heatsink providing ≤5 °C/W thermal resistance. The +150°C rating is confirmed in the Absolute Maximum Ratings table of the official K2105 datasheet revision and applies to both standard and AEC-Q101–qualified variants of the SRAF830.

Does the SRAF830 have an electrically isolated tab?

Yes, the SRAF830 uses the ITO-220AC package, which features an electrically isolated metal tab. Unlike standard TO-220AC, the ITO variant incorporates dielectric insulation between the silicon die and the external tab surface-enabling direct mounting to a grounded heatsink without requiring insulating pads or washers. This isolation is verified per UL Recognized File #E-326243 and is critical for reducing assembly complexity in automotive power modules.

What is the forward voltage of the SRAF830 at 8 A and 100°C junction temperature?

The forward voltage (V_F) of the SRAF830 is not explicitly specified at 100°C in the K2105 datasheet; however, the typical V_F at 25°C is 0.55 V, and the datasheet provides Fig.4 (Typical Forward Characteristics) showing V_F increases to ≈0.62 V at 100°C for 8 A. This 13% increase reflects the positive temperature coefficient of Schottky diodes and must be accounted for in thermal design margins-especially in sealed enclosures where case temperature may exceed 80°C.

Is the SRAF830 suitable for use in synchronous rectification topologies?

No-the SRAF830 is a passive Schottky rectifier and cannot replace a MOSFET in synchronous rectification. It functions as a unidirectional, self-commutated device with fixed forward conduction and reverse blocking. While its low V_F and zero reverse recovery make it ideal for *asynchronous* flyback, forward, and LLC secondary-side rectification, true synchronous rectification requires gate-controlled FETs with external timing signals. The SRAF830 remains optimal where simplicity, cost, and reliability outweigh marginal efficiency gains from synchronous control.

What does the "H" suffix mean in SRAF830H ordering code?

The "H" suffix in SRAF830H denotes AEC-Q101 qualification-confirming that the device has passed all stress tests defined in the AEC-Q101 standard for discrete semiconductors, including high-temperature operating life (HTOL), temperature cycling (TC), and unbiased highly accelerated stress test (UHAST). SRAF830 (without H) is the standard industrial-grade version; SRAF830H is the automotive-qualified variant with full traceability, extended testing, and certified lot-level documentation required for Tier 1 automotive supply chains.