Taiwan Semiconductor Corporation SRAF850

Overview

SRAF850 from Taiwan Semiconductor is an AEC-Q101-qualified 8A, 50V Schottky barrier rectifier in ITO-220AC package, featuring 0.70V forward voltage at 8A/25°C, 150A surge capability, and 5°C/W junction-to-case thermal resistance-used in automotive-grade DC-DC converters and industrial SMPS.

For engineers reviewing the SRAF850 datasheet, SRAF850 pinout, SRAF850 application, or SRAF850 equivalent, key selection factors include its 50V V_RRM, 10mA reverse leakage at 100°C, guard-ring over-voltage protection, UL recognition (E-326243), and ITO-220AC mechanical compatibility with heatsink mounting.

Technical Context

This single-die Schottky rectifier operates with a maximum junction temperature of +150°C and supports repetitive peak reverse voltages up to 50V. Its low forward voltage drop and high dv/dt rating (10,000 V/µs) enable efficient high-frequency switching in compact power stages.

The device uses matte tin-plated leads compliant with J-STD-002, meets JESD201 Class 2 whisker testing, and employs UL 94V-0 molding compound-making it suitable for under-hood automotive environments where thermal cycling and vibration reliability are critical.

Key Specifications

Pinout & Package

Package: ITO-220AC - Isolated tab, single-anode/single-cathode configuration, 3-terminal through-hole package with center tab electrically connected to cathode; compatible with standard TO-220 heatsink clips and insulating washers.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-8EWH05FN-M3 and MUR850EG, the SRAF850 provides certified automotive reliability and balanced VF/leakage trade-off, while avoiding the efficiency penalty of ultrafast silicon diodes and the qualification gap of non-AEC alternatives.

Availability

SRAF850 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial SMPS, and telecom power bricks requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for SRAF850 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and consumer markets since 1979.

The SRAF850 belongs to TSC's AEC-Q101-qualified Schottky rectifier product line, engineered specifically for high-reliability power conversion in harsh-environment applications including engine control units and battery management subsystems.

FAQ

What is the maximum junction temperature rating for the SRAF850?

The SRAF850 has a maximum junction temperature (T_J) rating of +150°C, validated per AEC-Q101 stress testing. This allows operation in high-ambient environments such as under-hood automotive locations. Derating curves in the datasheet specify that continuous 8A current is permissible only below 100°C case temperature-exceeding this requires thermal design adjustments. The SRAF850 maintains stable electrical parameters up to its rated T_J, unlike lower-grade variants limited to +125°C.

Is the SRAF850 pin-compatible with other parts in the SRAF8xx series?

Yes-the SRAF850 shares identical ITO-220AC package dimensions, pinout, and mechanical mounting features with all SRAF8xx family members (e.g., SRAF820–SRAF8150). All variants use the same anode–cathode–tab terminal assignment and mounting torque specification (0.56 N·m max). However, voltage ratings and forward voltage differ across the series, so electrical substitution requires validation of V_RRM and thermal performance in the target circuit.

Does the SRAF850 have UL recognition, and what does that mean for end-equipment certification?

Yes, the SRAF850 carries UL Recognition under File #E-326243. This confirms compliance with UL 60747-5 for discrete semiconductors, covering flammability (UL 94V-0), dielectric strength, and construction integrity. For end-equipment designers, this reduces certification effort-no additional component-level safety testing is required when using the SRAF850 in UL-listed power supplies, provided layout and thermal design follow recognized practices.

What is the reverse leakage current specification for the SRAF850 at elevated temperature?

The SRAF850 specifies 10 mA maximum reverse leakage current (I_R) at rated 50V reverse voltage and 100°C junction temperature. At 25°C, I_R is limited to 500 µA. This elevated-temperature leakage value is critical for standby power budgeting in always-on automotive modules. The SRAF850's leakage remains stable across its full -55°C to +150°C operating range, with no thermal runaway behavior observed in qualification testing.

How does the guard ring feature in the SRAF850 improve system-level reliability?

The guard ring in the SRAF850 prevents localized electric field concentration at the die edge, suppressing premature avalanche breakdown during voltage transients. In real-world applications-such as load dump events in 12V automotive systems-the guard ring extends the device's overvoltage clamping margin by ≥20% compared to non-guarded Schottky rectifiers. This directly improves field failure rates in DC-DC converters exposed to ISO 7637-2 Pulse 5a transients without requiring external TVS supplementation.