Taiwan Semiconductor Corporation SRT13 A1G

Overview

SRT13 A1G from Taiwan Semiconductor is a 1A, 30V Schottky barrier rectifier in TS-1 package, featuring low forward voltage (0.55 V at 1 A, 25°C), high surge current capability (25 A), and AEC-Q101 qualification option. It serves as a primary output rectifier in compact DC/DC converters for automotive infotainment power supplies.

For engineers reviewing the SRT13 A1G datasheet, SRT13 A1G pinout, SRT13 A1G application, or SRT13 A1G equivalent, key selection criteria include its 30 V V_RRM, 0.55 V forward drop at rated current, 125°C maximum junction temperature, TS-1 mechanical outline, and cathode-band polarity marking - all critical for thermal design and layout validation in space-constrained SMPS.

Technical Context

This Schottky rectifier uses a single-die construction with guard ring overvoltage protection and pure tin-plated leads compliant with J-STD-002 solderability. Its 50 °C/W junction-to-ambient thermal resistance and 28–110 pF junction capacitance (depending on voltage grade) directly impact switching loss and EMI behavior in high-frequency converters.

The device operates across –55°C to +125°C junction range (standard grade) and supports repetitive 8.3 ms half-sine surge currents up to 25 A. Reverse leakage remains ≤500 µA at 25°C and ≤10 mA at 100°C for the SRT13 variant, enabling stable performance in thermally demanding environments.

Key Specifications

Pinout & Package

TS-1 package: surface-mount, single-diode configuration with anode and cathode terminals. Cathode identified by molded band. Dimensions: 2.5 mm × 4.5 mm × 1.9 mm (L × W × H). Lead finish: pure tin, J-STD-002 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with SB130-TB and SS13-E3/5AT, the SRT13 A1G delivers superior thermal performance (50 °C/W) in a compact TS-1 package while maintaining AEC-Q101 qualification readiness - making it optimal for new SMT-based automotive and industrial power designs requiring robust surge handling and space efficiency.

Availability

SRT13 A1G is available at Aetrix Electronics and suitable for automotive infotainment systems, USB-C PD adapters, and industrial IoT sensor node power supplies requiring stable component supply, consistent parametric performance, and long-term manufacturability.

Supply support for SRT13 A1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global automotive, industrial, and consumer markets since 1979.

The SRT12–SRT115 series was developed to deliver high-reliability, low-loss Schottky rectifiers in standardized TS-1 packaging for cost-sensitive yet thermally demanding DC/DC and SMPS applications - especially where AEC-Q101 compliance and tight V_F tolerance are critical.

FAQ

What is the maximum junction temperature rating for the SRT13 A1G?

The SRT13 A1G has a maximum junction temperature (T_J) of +125°C under standard operating conditions. This rating applies to the non-AEC-Q101 qualified version; the AEC-Q101 variant (e.g., SRT13H) extends to +150°C. Derating curves in the datasheet define allowable forward current versus ambient temperature, and thermal design must account for the 50 °C/W R_θJA to avoid exceeding this limit in actual layouts.

Does the SRT13 A1G have AEC-Q101 qualification?

The SRT13 A1G itself is not AEC-Q101 qualified; qualification is indicated by the "H" suffix (e.g., SRT13H). However, the SRT13 A1G shares identical die, process, and TS-1 packaging with the AEC-Q101 variant, enabling straightforward qualification migration. For automotive applications requiring certified components, SRT13H is the designated orderable part.

What is the forward voltage specification for the SRT13 A1G at 1 A and 125°C?

The SRT13 A1G forward voltage (V_F) is specified at 0.55 V maximum at I_F = 1 A and T_J = 25°C. At 125°C, V_F decreases due to negative temperature coefficient of Schottky diodes; typical data shows ~0.42 V at 1 A and 125°C. The datasheet does not provide a guaranteed max at elevated temperature, so design margins should be based on 25°C spec unless thermal simulation confirms lower junction rise.

How is polarity marked on the SRT13 A1G package?

Polarity on the SRT13 A1G is indicated by a molded cathode band on the TS-1 package body. This band aligns with the cathode terminal, which is the output side in forward conduction. The anode is the unmarked terminal. This marking complies with JEDEC standards and is visible under standard AOI inspection, supporting automated optical alignment during SMT placement.

What is the reverse leakage current of the SRT13 A1G at 25°C and 100°C?

At 25°C and rated V_R = 30 V, the SRT13 A1G exhibits a maximum reverse leakage current (I_R) of 500 µA. At 100°C and same voltage, the maximum I_R rises to 10 mA. These values are confirmed in the Electrical Specifications table and reflect worst-case behavior across process variation; typical units show significantly lower leakage, supporting stable operation in thermally managed environments.