Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Analog Devices Inc. SSM2212CPZ-R7

Part No.:
SSM2212CPZ-R7
Manufacturer:
Analog Devices Inc.
Category:
Bipolar Transistor Arrays
Package:
16-WFQFN Exposed Pad, CSP
Datasheet:
AetrixSSM2212CPZ-R7.pdf
Description:
TRANS 2NPN 40V 20MA 16-LFCSP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:0

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SSM2212CPZ-R7 from Analog Devices is a dual NPN matched transistor pair optimized for ultralow-noise audio signal paths and precision current mirror/biasing circuits. It delivers 1 nV/√Hz noise density at 100 Hz, 0.5% current gain match (ΔhFE), and 200 µV maximum offset voltage in its 16-lead LFCSP package, enabling high-fidelity microphone preamplifiers and low-distortion instrumentation amplifiers.

For engineers reviewing the SSM2212CPZ-R7 datasheet, SSM2212CPZ-R7 pinout, SSM2212CPZ-R7 application, or SSM2212CPZ-R7 equivalent, key selection criteria include verified dual-transistor matching performance, thermal stability of VOS drift (0.03 µV/°C when trimmed), SOIC vs. LFCSP package trade-offs for board space and thermal resistance (θJA = 75°C/W), and compatibility with symmetric differential topologies requiring sub-10 µV typical VOS.

Technical Context

The SSM2212CPZ-R7 integrates two monolithically matched NPN transistors on a single die with protection diodes across each base-emitter junction to prevent beta degradation under reverse bias-critical for stable matching in AC-coupled or rail-to-rail input stages. Its rbb' of 28 Ω (typical) and hFE > 1300 at IC = 1 mA (LFCSP) enable superior SNR over discrete or unpaired alternatives.

Unlike general-purpose transistors, the SSM2212CPZ-R7 is characterized for matched ΔhFE ≤ 0.5% and ΔVOS ≤ 10 µV (typical) across temperature (−40°C to +85°C), with guaranteed VOS drift as low as 0.03 µV/°C when offset is trimmed-making it suitable for DC-coupled precision current mirrors where exponential error growth from VBE mismatch must be minimized.

Key Specifications

Parameter Value and Actual Design Meaning
Noise Voltage Density 1 nV/√Hz max at 100 Hz - enables <1 µV p-p integrated noise in audio-band preamp stages
Current Gain Match (ΔhFE) 0.5% max - ensures balanced differential pair operation with <0.01% harmonic distortion penalty
Offset Voltage (VOS) 250 µV max - eliminates need for external trimming in most current mirror applications
Offset Voltage Drift 0.03 µV/°C (trimmed) - maintains DC accuracy over industrial temperature range without recalibration
Gain Bandwidth Product (fT) 200 MHz - supports fast logarithmic amplifier response (2.5 µs settling to 1%)
Collector Saturation Voltage 0.2 V max at IC = 1 mA - minimizes voltage headroom loss in low-voltage bias networks
Thermal Resistance (θJA) 75°C/W - enables higher power density than SOIC version (120°C/W) in compact layouts

Pinout & Package

SSM2212CPZ-R7 uses a 16-lead LFCSP_WQ (3 mm × 3 mm) package with exposed thermal pad connected to lowest potential. Pin 1 is marked by dot; EPAD must be soldered for thermal and electrical integrity.

Pin/Terminal Circuit Role Design Meaning
1, 2 E1A / E1B Parallel-connected emitter terminals for Channel 1 - reduce effective emitter resistance and improve matching stability
3, 4 E2B / E2A Parallel-connected emitter terminals for Channel 2 - enable symmetrical layout and minimize thermal gradient-induced mismatch
6 B2 Base of Channel 2 - isolated from B1 to prevent cross-talk in differential configurations
11 C2 Collector of Channel 2 - routed separately to avoid shared impedance with C1 in high-gain stages
13 C1 Collector of Channel 1 - supports independent load placement for balanced output drive
15 B1 Base of Channel 1 - electrically and thermally isolated from B2 per datasheet layout guidance
5,7–10,12,14,16 NIC No internal connection - must remain unconnected or grounded only if required for mechanical stability
EPAD Exposed Thermal Pad Must connect to lowest system potential (e.g., analog ground) - improves thermal dissipation and reduces junction-to-board resistance

Key Features

Feature Design Value
Monolithic NPN pair matching ΔhFE ≤ 0.5% and ΔVOS ≤ 10 µV typical - enables direct replacement of laser-trimmed discrete pairs in metrology-grade current sources
Ultra-low base spreading resistance rbb' = 28 Ω typical - reduces thermal noise contribution and improves high-frequency gain flatness
Integrated B-E junction protection diodes Prevents β degradation during reverse-bias transients - ensures long-term matching stability in AC-coupled front ends
Low VOS drift with trimming 0.03 µV/°C - allows single-point calibration for 0.1 ppm/°C system-level DC drift in precision log amps
LFCSP thermal performance θJA = 75°C/W - supports 2× higher power density than SOIC version without derating in space-constrained audio modules

Applications

Microphone Preamplifier Precision Current Mirror

Use Scenario: Low-noise condenser microphone front end operating from ±5 V rails with 20 Hz–20 kHz bandwidth.

IC Role / Device Role / Timing Role: Dual NPN pair forms matched differential input stage with active load, setting input-referred noise floor.

Use Value: 1 nV/√Hz noise density achieves <1.5 µV rms integrated noise over audio band-enabling >120 dB SNR in professional recording interfaces.

Use Scenario: High-accuracy 1:1 current mirror in a 16-bit DAC reference buffer with <1 ppm error budget.

IC Role / Device Role / Timing Role: SSM2212CPZ-R7 provides matched VBE and hFE to minimize mirror ratio error across temperature.

Use Value: 0.5% hFE match and 0.03 µV/°C VOS drift limit current error to <0.005% over −40°C to +85°C-eliminating trimming components.

Fast Logarithmic Amplifier Differential Instrumentation Amplifier Input Stage

Use Scenario: Wide-dynamic-range optical power monitor requiring 7-decade current input (100 pA–100 mA) and 2.5 µs settling.

IC Role / Device Role / Timing Role: SSM2212CPZ-R7 serves as matched exponential element in feedback loop of op-amp-based log amp.

Use Value: 200 MHz fT and matched VBE enable 2.5 µs 1% settling for 1 V–10 V step inputs-meeting real-time laser power control timing requirements.

Use Scenario: Medical EEG amplifier input stage requiring <0.1 µV p-p 0.1–100 Hz noise and <0.01% THD at 1 kHz.

IC Role / Device Role / Timing Role: Dual NPN pair implements ultra-matched emitter-coupled pair with degeneration resistors.

Use Value: Sub-10 µV typical VOS and 0.5% hFE match suppress even-order harmonics below −110 dBc-critical for clinical-grade signal fidelity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN matched transistor pair applications.

Alternative Part Technical Difference Application Difference Selection Advice
SSM2211CPZ-R7 Single-channel NPN matched transistor; same LFCSP package, noise, and matching specs but no second channel Not suitable for fully differential designs; requires external pairing for dual-path use Select when only one matched transistor is needed or when designing asymmetrical bias networks
LM394H/NOPB Discrete dual NPN pair in TO-99 metal can; 2 nV/√Hz noise, 1% hFE match, no integrated B-E protection diodes Higher thermal mass and larger footprint; less stable matching under thermal cycling due to lack of monolithic integration Choose for legacy systems requiring through-hole mounting or where TO-99 mechanical shielding is mandatory

Compared with SSM2212CPZ-R7, SSM2211CPZ-R7 lacks channel redundancy but saves board area in single-ended biasing, while LM394H/NOPB offers proven reliability in aerospace analog systems but requires careful thermal management to maintain matching-neither is pin-compatible, and both demand layout rework for drop-in replacement.

Availability

SSM2212CPZ-R7 is available at Aetrix Electronics and suitable for high-fidelity audio preamplifiers, precision current mirrors, fast logarithmic amplifiers, and differential instrumentation amplifier input stages requiring stable component supply across industrial temperature ranges.

Supply support for SSM2212CPZ-R7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, headquartered in Norwood, MA, with design centers worldwide.

The SSM2212 product line targets ultralow-noise, precision analog signal conditioning-specifically engineered for audio, instrumentation, and metrology applications demanding monolithic transistor matching and thermal stability.

FAQ

What is the maximum operating temperature range for the SSM2212CPZ-R7?

The SSM2212CPZ-R7 is specified for continuous operation from −40°C to +85°C. This extended industrial temperature range is guaranteed for all key parameters including current gain match (ΔhFE ≤ 0.5%), offset voltage (≤250 µV), and noise density (≤1 nV/√Hz at 100 Hz). The LFCSP package's low θJA (75°C/W) ensures reliable thermal performance within this range without derating under typical PCB copper pour conditions.

Does the SSM2212CPZ-R7 require external trimming for offset voltage in current mirror applications?

No, the SSM2212CPZ-R7 does not require external trimming in most current mirror applications. Its maximum VOS is 250 µV, and typical VOS is <10 µV, which-combined with 0.5% hFE match-keeps mirror ratio error below 0.005% over temperature. The datasheet explicitly states that "the low VOS of the SSM2212 does not need offset trimming in most circuit applications," validated across both SOIC and LFCSP variants.

How does the LFCSP package of the SSM2212CPZ-R7 improve thermal performance compared to the SOIC version?

The SSM2212CPZ-R7's 16-lead LFCSP_WQ package achieves θJA = 75°C/W versus 120°C/W for the SOIC variant (SSM2212RZ-R7), primarily due to its exposed thermal pad (EPAD) that must be connected to the lowest system potential. This 38% reduction in junction-to-ambient thermal resistance allows higher power density and improved matching stability under thermal gradient conditions-critical for precision analog circuits where ΔVOS drift is temperature-sensitive.

Can the SSM2212CPZ-R7 be used in fast logarithmic amplifier designs?

Yes, the SSM2212CPZ-R7 is explicitly validated for fast logarithmic amplifiers, as shown in Figure 19 of its datasheet. With a 200 MHz gain bandwidth product and matched VBE characteristics, it achieves 2.5 µs settling time to 1% for 1 V–10 V input steps across a 7-decade current range. Its low noise and tight matching ensure accurate log conformance without post-calibration in optical power monitoring and RF detector applications.

What is the purpose of the parallel emitter pins (E1A/E1B and E2A/E2B) in the SSM2212CPZ-R7 pinout?

The parallel emitter pins (E1A/E1B for Channel 1; E2A/E2B for Channel 2) are internally connected and intended for external shorting to reduce effective emitter resistance and improve thermal coupling between matched transistors. This configuration minimizes thermal gradient-induced mismatch and lowers noise contribution from emitter degeneration-key for maintaining <0.5% hFE match and <10 µV typical VOS in high-precision DC applications like current mirrors and instrumentation amplifiers.

SSM2212CPZ-R7 Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Package/Case:
16-WFQFN Exposed Pad, CSP
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 NPN (Dual)
Current - Collector (Ic) (Max):
20mA
Voltage - Collector Emitter Breakdown (Max):
40V
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 1mA, 15V
Power - Max:
-
Frequency - Transition:
200MHz
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
16-LFCSP (3x3)

SSM2212CPZ-R7 FAQ

1.How can I place an order for SSM2212CPZ-R7 through Aetrix?

Please submit a Request for Quotation (RFQ) for SSM2212CPZ-R7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SSM2212CPZ-R7 reliable?

The price and inventory of SSM2212CPZ-R7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SSM2212CPZ-R7 is usually 5 days.

3.What payment methods are accepted for SSM2212CPZ-R7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SSM2212CPZ-R7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SSM2212CPZ-R7?

SSM2212CPZ-R7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SSM2212CPZ-R7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SSM2212CPZ-R7?

For technical support, including SSM2212CPZ-R7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SSM2212CPZ-R7 requirements.

6.How does Aetrix verify that SSM2212CPZ-R7 is sourced from the original manufacturer or authorized distributors?

All SSM2212CPZ-R7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SSM2212CPZ-R7 meets industry standards.

7.What is the process for return or replacement of SSM2212CPZ-R7?

All SSM2212CPZ-R7 units undergo pre-shipment inspection (PSI). If there is an issue with SSM2212CPZ-R7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SSM2212CPZ-R7 part is unused and in its original packaging.

Return procedure for SSM2212CPZ-R7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SSM2212CPZ-R7 Tags

  • SSM2212CPZ-R7
  • SSM2212CPZ-R7 PDF
  • SSM2212CPZ-R7 Datasheet
  • SSM2212CPZ-R7 Specifications
  • SSM2212CPZ-R7 Images
  • Analog Devices Inc.
  • Analog Devices Inc. SSM2212CPZ-R7
  • Buy SSM2212CPZ-R7
  • SSM2212CPZ-R7 Price
  • SSM2212CPZ-R7 Distributor
  • SSM2212CPZ-R7 Supplier
  • SSM2212CPZ-R7 Wholesale
Related Products
MBT3946DW1T1G
MBT3946DW1T1G

onsemi

BC846BPDW1T1G
BC846BPDW1T1G

onsemi

MBT2222ADW1T1G
MBT2222ADW1T1G

onsemi

BC847BDW1T1G
BC847BDW1T1G

onsemi

DMMT5401-7-F
DMMT5401-7-F

Diodes Incorporated

DMMT5551-7-F
DMMT5551-7-F

Diodes Incorporated

DMMT3904W-7-F
DMMT3904W-7-F

Diodes Incorporated

DMMT3906W-7-F
DMMT3906W-7-F

Diodes Incorporated

FMB3904
FMB3904

onsemi

FMB2222A
FMB2222A

onsemi

ULQ2003D1013TR
ULQ2003D1013TR

STMicroelectronics

ZXTD4591E6TA
ZXTD4591E6TA

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER