STMicroelectronics STBP110CVDJ6F

Overview

STBP110CVDJ6F from STMicroelectronics is an overvoltage protection device featuring an integrated 170 mΩ N-channel MOSFET switch, 28 V input overvoltage lockout (OVLO), 1.2 A continuous current rating, thermal shutdown with 20 °C hysteresis, and soft-start control for inrush current limiting. It operates in portable power rails of smartphones and digital cameras to safeguard downstream ICs from DC supply faults.

For engineers reviewing the STBP110CVDJ6F datasheet, STBP110CVDJ6F pinout, STBP110CVDJ6F application, or STBP110CVDJ6F equivalent, key selection criteria include OVLO threshold accuracy (28 V ±5%), FLT open-drain fault signaling timing (trec = 12 ms typ.), EN active-low enable logic with internal 250 kΩ pull-down, and TDFN-8 thermal pad layout requirements for junction temperature control under 1.2 A load.

Technical Context

The STBP110CVDJ6F implements a single-chip overvoltage protection solution using an internal high-voltage N-channel MOSFET controlled by analog comparators monitoring VIN against UVLO (typically 3.8 V) and OVLO (28 V) thresholds with built-in hysteresis. Its charge pump enables full gate drive for low RDS(on) operation without external bias.

Operation includes three fault responses: immediate MOSFET turn-off on OVLO detection, thermal shutdown at TJ ≥ 145 °C (with 20 °C hysteresis), and UVLO-based disable below 3.8 V. The FLT output asserts low during any active fault condition and enters high-impedance state when EN is high or VIN < UVLO.

Key Specifications

Pinout & Package

STBP110CVDJ6F uses a RoHS-compliant 2 mm × 2 mm × 0.75 mm TDFN-8 package with exposed thermal pad connected internally to GND. The pad must be soldered to a PCB thermal plane for effective junction temperature management under 1.2 A load.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar overvoltage protection applications.

Compared with STBP110CVDJ6F, TUSB544RGER serves signal integrity rather than power protection, while TPS259210DRCR trades 28 V OVLO headroom and China standard compliance for tighter input voltage range and lower gate-drive dependency-making STBP110CVDJ6F uniquely suited for universal adapter compatibility in consumer handhelds.

Availability

STBP110CVDJ6F is available at Aetrix Electronics and suitable for smartphone power input protection, digital camera DC adapter interfaces, PDA system-level power sequencing, and MP3 player battery charging paths requiring stable component supply across high-volume consumer electronics production.

Supply support for STBP110CVDJ6F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, mixed-signal, power, and microcontroller solutions for automotive, industrial, and consumer markets.

The STBP110 belongs to ST's dedicated overvoltage protection IC product line, engineered specifically for robust front-end power rail safeguarding in space-constrained portable electronics with stringent ESD and regulatory compliance requirements.

FAQ

What is the recommended input capacitor value and placement for STBP110CVDJ6F?

A minimum 1 µF low-ESR ceramic capacitor must be placed directly between IN and GND, with physical placement adjacent to the IN pin. This capacitor provides essential decoupling, suppresses fast voltage transients, and enables the specified ±8 kV contact ESD protection level. Larger values (e.g., 10 µF) improve transient immunity but do not alter OVLO response time.

Can STBP110CVDJ6F support reverse current flow from OUT to IN?

Yes-the internal N-channel MOSFET's body diode permits reverse conduction from OUT to IN, enabling use cases like powering USB peripherals from a system battery. When VIN rises above UVLO, the MOSFET turns on fully, reducing forward drop to 170 mΩ × ILOAD. For reverse-current blocking, an external Schottky diode in series with OUT is recommended.

How does the FLT output behave during thermal shutdown versus overvoltage events?

FLT asserts low (active) identically during both OVLO and thermal shutdown conditions, providing unified fault signaling. It enters high-impedance (Hi-Z) state only when EN is high or VIN falls below UVLO (3.8 V), distinguishing normal disable from fault states. No internal differentiation between fault types is provided on FLT.

Is the exposed thermal pad on the TDFN-8 package electrically connected, and how should it be handled?

Yes-the exposed thermal pad is internally connected to GND and must be soldered to a dedicated PCB copper pour tied to the system ground plane. Thermal vias (≥4×0.3 mm diameter) beneath the pad are required to maintain TJ ≤ 125 °C at 1.2 A continuous load in still-air conditions, per ST's layout guidelines in Section 8.3 of the datasheet.