STMicroelectronics STBP112CVDJ6F

Overview

STBP112CVDJ6F from STMicroelectronics is an overvoltage protection device featuring an integrated 165 mΩ N-channel MOSFET switch, 28 V input overvoltage lockout (OVLO), thermal shutdown, soft-start, and active-low open-drain fault indication (FLT). It operates with up to 2 A continuous current and supports enable control (EN) for system-level power sequencing in portable USB-powered systems.

For engineers reviewing the STBP112CVDJ6F datasheet, STBP112CVDJ6F pinout, STBP112CVDJ6F application, or STBP112CVDJ6F equivalent, key selection criteria include OVLO threshold accuracy (28 V ±5%), R_DS(on) at 25 °C (165 mΩ max), thermal shutdown trip point (150 °C), FLT output drive capability (5 mA sink), and TDFN-8 package thermal pad grounding requirements.

Technical Context

The STBP112CVDJ6F implements a single-channel high-side protection architecture using an internal charge-pump–driven N-channel MOSFET, enabling low R_DS(on) without requiring external gate bias. Its OVLO circuit includes 200 mV hysteresis (V_HYS(OVLO)) for noise immunity during transient overvoltage events.

It integrates undervoltage lockout (V_UVLO = 3.9 V typ., hysteresis 100 mV), thermal shutdown (T_off = 150 °C, hysteresis 20 °C), and soft-start (t_on = 1.2 ms typ.) to limit inrush current into downstream capacitive loads up to 100 µF. The FLT pin provides real-time status of OVLO or thermal fault conditions.

Key Specifications

Pinout & Package

STBP112CVDJ6F uses a RoHS-compliant 2 mm × 2 mm × 0.75 mm TDFN-8 package with exposed thermal pad (internally connected to GND). The pad must be soldered to a dedicated GND copper area ≥12 mm² for thermal performance and EMI control.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar overvoltage protection applications.

Compared with TUSB544RGER and TPD3S014RTER, STBP112CVDJ6F uniquely combines 28 V OVLO, integrated 2 A MOSFET, thermal shutdown, and system-controllable enable-making it the only option for robust, self-contained overvoltage protection in 5–28 V portable power rails.

Availability

STBP112CVDJ6F is available at Aetrix Electronics and suitable for smartphone charging interfaces, digital camera power management, PDA system power sequencing, and MP3 player USB port protection requiring stable component supply across extended production lifecycles.

Supply support for STBP112CVDJ6F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, specializing in power management, analog, and microcontroller solutions for automotive, industrial, and consumer markets.

The STBP112 belongs to ST's USB and power protection product line, engineered specifically for overvoltage resilience in space-constrained portable electronics with stringent ESD and thermal safety requirements.

FAQ

What is the minimum input capacitance required for reliable operation?

A minimum 1 µF low-ESR ceramic capacitor must be placed between IN and GND, located as close as possible to the STBP112CVDJ6F package. This capacitor ensures stable operation during fast transients, provides decoupling for the internal charge pump, and enables the ±8 kV contact ESD rating. Omitting it degrades OVLO response time and may cause erratic FLT behavior under ESD stress.

Can STBP112CVDJ6F support reverse current flow from OUT to IN?

Yes - the internal N-channel MOSFET topology allows bidirectional conduction. When voltage appears at OUT higher than IN (e.g., system battery powering a USB peripheral), current flows first through the body diode, then the MOSFET turns on after startup delay if IN exceeds UVLO. This feature enables reverse power delivery without external components, though a series Schottky diode can block reverse current if needed.

How does the FLT pin behave during undervoltage or EN-driven disable?

During UVLO (VIN < 3.9 V) or when EN is driven high, the FLT pin enters high-impedance (Hi-Z) state - it neither sources nor sinks current. This prevents false fault signaling and eliminates the need for additional logic isolation. FLT only actively pulls low during confirmed OVLO or thermal shutdown events, ensuring unambiguous fault reporting to the host controller.

Is the exposed thermal pad electrically connected, and how should it be handled on PCB?

Yes - the exposed thermal pad is internally connected to GND. It must be soldered to a dedicated GND copper pour of ≥12 mm² with ≥4 thermal vias (0.3 mm diameter) to an inner GND plane. This connection is mandatory for achieving the specified R_thJA = 59 K/W and preventing thermal shutdown under 2 A load at 50 °C ambient. Floating the pad invalidates thermal and electrical specifications.