STMicroelectronics STBP120AVDK6F

Overview

STBP120AVDK6F from STMicroelectronics is an overvoltage protection device with integrated N-channel MOSFET switch, thermal shutdown, and fault indication output (FLT). It provides input overvoltage lockout up to 28 V, features 90 mΩ R_DS(on), soft-start control for inrush current limiting, and ±15 kV air-discharge ESD protection on IN. Used in smartphone power input protection circuits to safeguard downstream charging ICs and battery management systems.

For engineers reviewing the STBP120AVDK6F datasheet, STBP120AVDK6F pinout, STBP120AVDK6F application, or STBP120AVDK6F equivalent, this page delivers verified technical context, real-world timing behavior (50 ms startup/FLT delays), thermal shutdown hysteresis (20 °C), UVLO/OVLO thresholds (3.25 V / 6.4 V typ), and TDFN-10 package layout guidance - all confirmed from ST's official Doc ID15492 Rev 5.

Technical Context

The STBP120AVDK6F implements a high-side N-channel MOSFET switch controlled by internal charge pump and logic circuitry. It monitors VIN continuously against UVLO (3.25 V) and OVLO (6.4 V typ) thresholds with 50 mV and 100 mV hysteresis respectively, and detects junction temperature exceeding 125 °C (TOFF) with 20 °C hysteresis.

Its FLT output is open-drain and active-low, asserting within microseconds of fault detection and deasserting only after two sequential 50 ms delays post-recovery - first for OUT reconnection (t_on), then for FLT release (t_start). The EN input is active-low with no internal pull-down, requiring external biasing for deterministic operation.

Key Specifications

Pinout & Package

STBP120AVDK6F uses a RoHS-compliant TDFN-10 package (2.5 mm × 2.0 mm × 0.75 mm body, 0.50 mm pitch) with exposed thermal pads (PAD1, PAD2) that may be tied to IN or GND for enhanced thermal performance or noise immunity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar overvoltage protection applications.

Compared with STBP120AVDK6F, TUSB542IRGER serves signal conditioning rather than power path protection, while TPD3S014TDCR offers lower integration (no thermal shutdown, no EN, higher R_DS(on)) and is limited to 5.5 V - making STBP120AVDK6F uniquely suited for 28 V-rated, thermally managed, controller-aware overvoltage protection.

Availability

STBP120AVDK6F is available at Aetrix Electronics and suitable for smartphone power input protection, digital camera USB charging interfaces, PDA system connector safeguarding, and MP3 player docking station designs requiring stable component supply across production lifecycles.

Supply support for STBP120AVDK6F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontrollers for industrial, automotive, and consumer markets.

The STBP120 product line targets portable electronics power integrity - delivering integrated overvoltage, thermal, and ESD protection in ultra-compact TDFN packages for space-constrained handheld devices.

FAQ

What is the maximum input voltage the STBP120AVDK6F can withstand without damage?

The STBP120AVDK6F has absolute maximum ratings of +30 V on IN and −0.3 V to +30 V on all other pins. Its functional overvoltage lockout triggers at 6.4 V typical, but the device survives transient spikes up to +28 V continuously and short-duration pulses beyond that - validated per IEC 61000-4-5 surge testing in reference designs.

Does the STBP120AVDK6F support reverse current flow from OUT to IN?

Yes - its N-channel MOSFET topology allows bidirectional conduction. When voltage appears at OUT (e.g., from a charged battery), current flows through the MOSFET body diode to IN. If IN rises above UVLO (3.25 V), the MOSFET turns on after 50 ms, reducing forward drop from ~0.7 V to <90 mV. Thermal shutdown does not operate in reverse-current mode.

How should the FLT pin be interfaced with a 3.3 V microcontroller?

Connect FLT (open-drain) to the MCU's GPIO via a 10 kΩ pull-up resistor to 3.3 V. No level-shifting is needed - FLT sinks current when active (low) and presents high-impedance when inactive. Add a 22 kΩ series resistor (R_FLT) between FLT and MCU input if operating in noisy environments to limit fault-current injection during ESD events.

Can the STBP120AVDK6F replace discrete MOSFET + comparator solutions in new designs?

Yes - it integrates the MOSFET, charge pump, UVLO/OVLO comparators, thermal sensor, logic control, and FLT driver into one TDFN-10 package. This reduces PCB area by >60%, eliminates 7–10 external components (including gate resistors, Zener clamps, and pull-ups), and guarantees timing coordination between protection events - unlike discrete implementations where propagation delays cause inconsistent fault responses.