STMicroelectronics STBP120CVDK6F

Overview

STBP120CVDK6F from STMicroelectronics is an overvoltage protection device featuring an integrated 90 mΩ N-channel MOSFET switch, thermal shutdown, soft-start, and active-low open-drain FLT output. It operates with input voltages up to +28 V, provides ±15 kV air-discharge ESD protection on IN, and complies with China YD/T 1591-2006 overvoltage requirements for portable power inputs in smartphones and digital cameras.

For engineers reviewing the STBP120CVDK6F datasheet, STBP120CVDK6F pinout, STBP120CVDK6F application, or STBP120CVDK6F equivalent, this device serves as a system-level input protection IC with precise OVLO/UVLO thresholds, junction temperature monitoring, and microcontroller-controllable enable/fault signaling - critical for USB-powered and battery-charging subsystems requiring robust fault isolation.

Technical Context

The STBP120CVDK6F implements a high-side N-channel MOSFET switch controlled by an internal charge pump, enabling operation from low VIN (≥3.25 V UVLO) while supporting up to 28 V input. Its protection logic combines analog voltage comparators for OVLO (typ. 6.4 V) and UVLO (typ. 3.25 V), plus a thermal sensor triggering shutdown at TJ ≥125 °C with 20 °C hysteresis.

Startup behavior includes two sequential 50 ms delays: ton (output turn-on after stable VIN) and tstart (FLT deactivation after output stabilization). The FLT pin remains functional regardless of EN state, and reverse current conduction (OUT→IN) is enabled via the MOSFET body diode - a deliberate topology for peripheral powering, though thermal shutdown does not protect against reverse-current-induced heating.

Key Specifications

Pinout & Package

STBP120CVDK6F uses a RoHS-compliant TDFN-10 package (2.5 mm × 2.0 mm × 0.75 mm, 0.5 mm pitch) with exposed thermal pads (PAD1, PAD2) that may be tied to IN or GND for improved thermal performance or noise immunity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar overvoltage protection applications.

Compared with TUSB544RGET and TPD3S014RTER, STBP120CVDK6F uniquely integrates OVLO, thermal shutdown, soft-start, and fault indication in a single 2.5×2 mm package - delivering complete, autonomous input protection without external components or host intervention.

Availability

STBP120CVDK6F is available at Aetrix Electronics and suitable for smartphone charging interfaces, digital camera power management, and PDA system protection requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for STBP120CVDK6F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for automotive, industrial, and consumer markets.

The STBP120 series belongs to ST's system protection product line, engineered specifically for robust, low-footprint overvoltage and thermal fault isolation in portable USB-powered devices - emphasizing reliability, ESD resilience, and seamless integration with battery charging architectures.

FAQ

Does STBP120CVDK6F support reverse current flow (OUT to IN), and how is it implemented?

Yes - the device allows reverse current via the intrinsic body diode of its integrated N-channel MOSFET. When voltage appears at OUT exceeding IN by ~0.7 V, current flows from OUT to IN. The MOSFET then turns on (after 50 ms delay) if IN rises above UVLO, reducing forward drop. This feature enables powering peripherals from battery via system connector, but thermal shutdown does not monitor reverse-current heating.

What is the exact OVLO threshold, and is it adjustable?

The OVLO threshold is factory-trimmed to 6.4 V (typical), with min/max range of 6.2 V to 6.6 V per datasheet Table 5. It is not user-adjustable; no external resistor or capacitor modifies this value. Hysteresis of 100 mV (typ.) ensures noise immunity during transient overvoltage events.

How should the FLT pin be interfaced with a 3.3 V microcontroller GPIO?

Connect FLT (open-drain) to the MCU GPIO via a 10–100 kΩ pull-up resistor to 3.3 V. No level-shifting is needed. The pin sinks ≤10 µA when active (low); when inactive (Hi-Z), the GPIO reads high. Avoid direct connection without pull-up, as FLT floats in fault-clear state and cannot drive high actively.

Can STBP120CVDK6F be used with input voltages below 3.25 V?

No - the undervoltage lockout (UVLO) circuit disables the MOSFET switch until VIN exceeds 3.25 V (typ.). Below this, OUT remains disconnected and FLT is driven low (if VIN ≥1.2 V). Operation below 1.2 V is undefined; the device draws minimal current (<1 µA) but provides no protection or signaling.