STMicroelectronics STC04IE170HV

Overview

STC04IE170HV from STMicroelectronics is a monolithic Emitter-Switched Bipolar Transistor (ESBT®) rated for 1700 V collector-source voltage, 4 A continuous collector current, and 0.17 Ω equivalent ON resistance. It integrates bipolar and MOSFET structures in a cascode configuration for gate-driven high-voltage topologies, specifically designed for auxiliary SMPS in three-phase mains systems.

For engineers reviewing the STC04IE170HV datasheet, STC04IE170HV pinout, STC04IE170HV application, or STC04IE170HV equivalent, key selection criteria include its squared RBSOA up to 1700 V, fast switching capability (≤150 kHz), low C_iss (510 pF at 25 V), and verified dynamic voltage performance (V_CS(dyn) = 4.32 V at 1 µs).

Technical Context

The STC04IE170HV implements a monolithic cascode structure combining a high-voltage bipolar transistor with a low-voltage MOSFET driver, enabling gate control of a 1700 V blocking device. Its squared Reverse-Biased Safe Operating Area (RBSOA) supports robust inductive turn-off without snubber circuits up to 1700 V.

It delivers low dynamic losses via optimized charge parameters: Q_GS(tot) = 3.9 nC and C_iss = 510 pF measured at 25 V with 1 MHz test frequency, driven by a 47 Ω gate resistor - enabling stable operation at up to 150 kHz in resonant and hard-switched topologies.

Key Specifications

Pinout & Package

Supplied in TO-247-4L HV package with isolated source terminal (pin 4), enabling Kelvin sensing and improved gate drive stability. The 4-pin layout separates power source (pin 3), emitter (pin 2), collector (pin 1), and Kelvin source (pin 4) to minimize parasitic inductance in high-dI/dt switching.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage cascode switch applications.

Compared with STGW30H65DFB and IXTH30N60P, the STC04IE170HV uniquely delivers single-device 1700 V capability with integrated Kelvin source and squared RBSOA - eliminating snubbers, stacking, and external sensing while maintaining 150 kHz switching feasibility.

Availability

STC04IE170HV is available at Aetrix Electronics and suitable for industrial auxiliary SMPS, three-phase motor drive aux supplies, and renewable energy combiner box control requiring stable component supply and long-term lifecycle support.

Supply support for STC04IE170HV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The ESBT® product line targets high-voltage, high-frequency power conversion where traditional IGBTs or MOSFETs face trade-offs between voltage rating, switching speed, and ruggedness - especially in auxiliary and control power stages.

FAQ

What is the recommended gate resistor value for STC04IE170HV?

The datasheet specifies R_G = 47 Ω for characterization of switching times and dynamic voltage. This value balances turn-on speed, Miller immunity, and gate drive power dissipation. Lower values (e.g., 22 Ω) reduce t_s but increase peak gate current and risk oscillation; higher values (e.g., 100 Ω) improve stability but extend t_s beyond 770 ns at hFE = 5.

Does STC04IE170HV require a negative gate voltage for turn-off?

No. The device uses a unipolar gate drive: V_GS = 0 V turns off the integrated MOSFET section, which de-biases the bipolar transistor. The absolute maximum V_GS is ±17 V, but the recommended drive is 0 V / +10 V. Negative gate voltage is unnecessary and not specified in any operating condition.

Can STC04IE170HV replace a discrete IGBT + diode pair in existing designs?

Yes - but only if the original design operates below 1700 V and uses gate-driven topologies. The ESBT's lower V_CS(ON) (0.6–0.7 V) and faster switching reduce losses versus typical IGBTs (V_CE(sat) ≥ 1.8 V), though layout must accommodate the 4-pin TO-247-4L HV package and Kelvin source routing.

What thermal derating applies above 25 °C case temperature?

With R_thJC = 0.7 °C/W, the maximum allowable power dissipation decreases linearly: P_tot = 178 W × (1 − (T_C − 25)/125). At T_C = 100 °C, usable power drops to 107 W. Derating must account for both conduction (I²R) and switching losses, especially above 100 kHz where dynamic losses dominate.