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STMicroelectronics STC08DE150HV

Part No.:
STC08DE150HV
Manufacturer:
STMicroelectronics
Category:
Special Purpose
Package:
TO-247-4
Datasheet:
AetrixSTC08DE150HV.pdf
Description:
TRANS ESBT 1500V 8A TO247-4LHV
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,091

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Product details

Overview

STC08DE150HV from STMicroelectronics is a hybrid emitter-switched bipolar transistor (ESBT®) rated for 1500 V collector-source voltage, 8 A continuous collector current, and 0.075 Ω equivalent ON resistance. It integrates high-voltage bipolar and low-voltage MOSFET technologies in a TO-247-4L HV package and is engineered for auxiliary flyback SMPS in three-phase industrial power supplies.

For engineers reviewing the STC08DE150HV datasheet, STC08DE150HV pinout, STC08DE150HV application, or STC08DE150HV equivalent, key selection criteria include its squared RBSOA up to 1500 V, fast switching capability up to 150 kHz with RG = 47 Ω, low Ciss of 750 pF, and gate-driven base control enabling simplified drive circuitry in high-voltage offline converters.

Technical Context

The STC08DE150HV implements an ESBT topology where a low-voltage MOSFET controls the base of a high-voltage bipolar transistor, decoupling gate drive requirements from collector voltage stress. Its internal structure enables simultaneous high breakdown voltage (1500 V VCS(SS)) and low conduction loss (VCS(ON) = 0.6 V at IC = 8 A, IB = 1.6 A).

It features a pulsed DC current gain (hFE) of 4.5–10 under defined test conditions, storage time (ts) as low as 526 ns, and dynamic collector-source voltage overshoot limited to 6 V (0.5 µs) and 2.2 V (1 µs) during turn-off - all validated with RG = 47 Ω and clamped inductive load testing.

Key Specifications

ParameterValue and Actual Design Meaning
VCS(SS)1500 V - supports direct connection to 1000 V DC bus or rectified three-phase mains without snubber
IC8 A continuous - delivers stable output power in auxiliary SMPS up to ~100 W at high efficiency
RCS(ON)0.075 Ω - reduces conduction losses and thermal stress vs. conventional IGBTs in same voltage class
Ciss750 pF at VCS = 25 V - enables fast switching up to 150 kHz with moderate gate drive strength (RG = 47 Ω)
ts / tf526 ns / 8.5 ns - short storage time minimizes switching energy loss during turn-off in hard-switched flyback
TJ(max)125 °C - defines maximum junction temperature for reliable operation under sustained 156 W dissipation limit
RthJC0.64 °C/W - allows thermal design with standard heatsinking for TO-247-4L HV mounting

Pinout & Package

STC08DE150HV is housed in a TO-247-4L HV package with four isolated terminals: Collector (C), Emitter (E), Gate (G), and Base (B). The fourth pin enables direct base access for optimized drive and improved safe operating area control.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Tab)Collector (C)High-voltage main current path terminal; electrically connected to metal tab for thermal and electrical grounding
Pin 2Emitter (E)Common emitter node for both bipolar and MOSFET sections; referenced ground for gate drive return
Pin 3Gate (G)Low-voltage MOSFET gate input; controls base current injection with ±20 V rating and 500 nA leakage
Pin 4Base (B)Direct access to bipolar transistor base; enables external base current limiting or active clamping

Key Features

FeatureDesign Value
Squared RBSOARated up to 1500 V with full 8 A current capability - eliminates derating across voltage range in inductive switching
Hybrid ESBT structureCombines MOSFET gate control with bipolar conduction - achieves lower RCS(ON) than comparable IGBTs
Low Ciss & fast switching750 pF input capacitance enables 150 kHz operation with minimal gate drive power and reduced EMI
Direct base terminalPin 4 provides external base access - supports active base control, snubberless turn-off, and precise timing

Applications

Industrial Three-Phase Auxiliary SMPSHigh-Voltage Flyback Converters

Use Scenario: Powering control logic, gate drivers, and sensors in variable-frequency drives fed from 400–690 VAC three-phase mains.

IC Role / Device Role / Timing Role: Primary switch in self-oscillating or PWM-controlled flyback topology delivering isolated 12–24 V bias rails.

Use Value: Enables compact, snubberless design due to 1500 V VCS(SS) and squared RBSOA - reduces component count and board space.

Use Scenario: Isolated auxiliary supply in HVDC systems, grid-tied inverters, and medium-voltage motor starters.

IC Role / Device Role / Timing Role: High-side switch operating at 60–150 kHz with clamped inductive turn-off to manage voltage overshoot.

Use Value: Low ts (526 ns) and controlled VCS(dyn) (≤6 V) minimize switching loss and eliminate need for complex RC snubbers.

Three-Phase Rectifier Post-RegulationHigh-Efficiency Off-Line Adapters

Use Scenario: Regulation stage after three-phase bridge rectification in telecom or industrial power modules.

IC Role / Device Role / Timing Role: Switching element in discontinuous conduction mode (DCM) flyback delivering <100 W at >85% efficiency.

Use Value: 0.075 Ω RCS(ON) and 0.6 V VCS(ON) reduce conduction loss versus standard IGBTs - improves light-load efficiency.

Use Scenario: Universal-input (90–264 VAC) offline adapters requiring high reliability and long service life.

IC Role / Device Role / Timing Role: Main power switch in compact, low-noise flyback designs targeting medical or industrial certification.

Use Value: ECOPACK®-compliant TO-247-4L HV package meets RoHS/REACH; 125 °C TJ(max) supports extended thermal margin in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage flyback switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STGW30H65DFB650 V IGBT with FRD; higher VCE(sat) (1.8 V), no base terminal, slower tf (100 ns)Limited to ≤650 V DC bus; requires snubber in 1000 V systems; no base control for dynamic SOA tuningChoose only if system voltage ≤650 V and cost sensitivity outweighs SOA flexibility
IXTH30N50L500 V N-channel MOSFET; RDS(on) = 0.12 Ω; no bipolar gain; lacks 1500 V ratingNot suitable for direct three-phase rectified bus use; requires stacked or cascode configuration for >600 VSelect only for lower-voltage, high-frequency resonant topologies where gate charge (Qg = 65 nC) is critical

Compared with STGW30H65DFB and IXTH30N50L, STC08DE150HV uniquely supports 1500 V operation with base-accessible ESBT architecture - enabling snubberless, high-SOA flyback designs unattainable with standard IGBTs or MOSFETs alone.

Availability

STC08DE150HV is available at Aetrix Electronics and suitable for industrial three-phase auxiliary SMPS, high-voltage flyback converters, and three-phase rectifier post-regulation requiring stable component supply and long-term design-in support.

Supply support for STC08DE150HV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, analog ICs, and MEMS sensors for industrial, automotive, and consumer markets.

The STC08DE150HV belongs to ST's high-voltage ESBT product line, developed specifically to replace IGBTs in auxiliary SMPS where high voltage, low conduction loss, and controllable switching behavior are essential.

FAQ

What is the recommended gate resistor value for STC08DE150HV?

The datasheet specifies performance validation with RG = 47 Ω, achieving ts = 526 ns and tf = 8.5 ns under defined inductive load conditions. Lower values (e.g., 22 Ω) reduce switching time but increase gate current stress; higher values (e.g., 100 Ω) improve EMI but extend ts and raise switching loss. Thermal and SOA limits must be verified per application.

Does STC08DE150HV require a negative gate voltage for turn-off?

No. STC08DE150HV uses a unipolar gate drive: VGS = 0 V turns off the MOSFET section, removing base drive and allowing the bipolar transistor to commutate naturally. The device is rated for VGS = ±20 V, but negative voltage is not required or specified for reliable turn-off in standard flyback operation.

Can STC08DE150HV be used in hard-switched forward converters?

No - the device is optimized for flyback topologies with clamped inductive loads. Its RBSOA and dynamic voltage ratings (e.g., VCSW = 1500 V) assume snubberless operation in flyback circuits. Forward converters impose different voltage/current stress profiles and lack the natural voltage clamping inherent to flyback, risking SOA violation.

Is STC08DE150HV still in active production?

Per STMicroelectronics' official documentation (Doc ID 12799 Rev 2), STC08DE150HV is marked "Obsolete Product(s)" in the datasheet header and revision history. However, Aetrix Electronics maintains legacy inventory and offers lifecycle management support including last-time buy planning and cross-reference assistance for qualified replacements.

STC08DE150HV Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
ESBT®
Package/Case:
TO-247-4
Packaging:
Tube
Product Status:
Obsolete
Transistor Type:
NPN - Emitter Switched Bipolar
Applications:
Gate Driver
Voltage - Rated:
1500V (1.5kV)
Current Rating (Amps):
8A
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-4L HV

STC08DE150HV FAQ

1.How can I place an order for STC08DE150HV through Aetrix?

Please submit a Request for Quotation (RFQ) for STC08DE150HV on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STC08DE150HV reliable?

The price and inventory of STC08DE150HV are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STC08DE150HV is usually 5 days.

3.What payment methods are accepted for STC08DE150HV?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STC08DE150HV transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STC08DE150HV?

STC08DE150HV orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STC08DE150HV order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STC08DE150HV?

For technical support, including STC08DE150HV datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STC08DE150HV requirements.

6.How does Aetrix verify that STC08DE150HV is sourced from the original manufacturer or authorized distributors?

All STC08DE150HV products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STC08DE150HV meets industry standards.

7.What is the process for return or replacement of STC08DE150HV?

All STC08DE150HV units undergo pre-shipment inspection (PSI). If there is an issue with STC08DE150HV, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STC08DE150HV part is unused and in its original packaging.

Return procedure for STC08DE150HV:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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